摘要:
A management server of a sample inspection system includes sample processing information generated on the basis of inspection request data, facility data, a simulation execution portion and a window generation portion for generating a monitor window. The inspection request data contains a priority, an order time, a required time and inspection items and the sample processing information contains an inspection start time and an inspection estimate finish time. The monitor window has a work area in which the samples represented by sample bars parallel to the abscissa are arranged in a vertical direction and a past record and a future schedule are allocated to this abscissa with the present time as the base. The sample bars display a simulation execution portion for executing simulation on the basis of the inspection start time, the inspection estimate finish time and a delay time. The management server displays the simulation result.
摘要:
A management server of a sample inspection system includes sample processing information generated on the basis of inspection request data, facility data, a simulation execution portion and a window generation portion for generating a monitor window. The inspection request data contains a priority, an order time, a required time and inspection items and the sample processing information contains an inspection start time and an inspection estimate finish time. The monitor window has a work area in which the samples represented by sample bars parallel to the abscissa are arranged in a vertical direction and a past record and a future schedule are allocated to this abscissa with the present time as the base. The sample bars display a simulation execution portion for executing simulation on the basis of the inspection start time, the inspection estimate finish time and a delay time. The management server displays the simulation result.
摘要:
There is provided a sample test system which can execute a prior process for a specific sample in consideration of priorities and process progresses of a plurality of samples processed in the sample test system. The sample test system includes a sample-test-device management server 101, when a specific-sample prior process request containing a specific sample ID and a prior-process-request level identification code is accepted from a sample access system 108, which selects a specific-sample prior-process-policy determination table based on the prior-process-request level identification code attached to the specific-sample prior process request, which determines a specific-sample prior process policy based on the specific-sample prior-process-policy determination table and a process state of the sample, which specifies a sample ID regarding the specific sample ID, and which transmits the specific-sample prior process policy to a sample-test-device group 119.
摘要:
There is provided a sample test system which can execute a prior process for a specific sample in consideration of priorities and process progresses of a plurality of samples processed in the sample test system. The sample test system includes a sample-test-device management server 101, when a specific-sample prior process request containing a specific sample ID and a prior-process-request level identification code is accepted from a sample access system 108, which selects a specific-sample prior-process-policy determination table based on the prior-process-request level identification code attached to the specific-sample prior process request, which determines a specific-sample prior process policy based on the specific-sample prior-process-policy determination table and a process state of the sample, which specifies a sample ID regarding the specific sample ID, and which transmits the specific-sample prior process policy to a sample-test-device group 119.
摘要:
Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.
摘要:
The object of the present invention is to provide a LED illumination system which does not cause heat generation and damage, even when a straight-tube fluorescent lamp is mistakenly fitted into a straight-tube fluorescent lamp luminaire in which the fluorescent lamp ballast has been replaced with a LED lighting device.The LED illumination system according to the present invention is configurated in such a manner that the LED lighting device is installed in an existing straight-tube fluorescent lamp luminaire, and the LED lamp is connected to the existing sockets. The characteristic of the output from the LED lighting device connected to either inter-terminal section A on the ends of the LED lamp is to be different from that of an existing fluorescent lamp lighting device. The LED lamp is provided with lighting device output detection means for detecting the output from the LED lighting device and also with protection means for cutting off the input to the LED lamp when the output detected by the lighting device output detection means is outside of a predetermined range.
摘要:
An LED coaster may include: a light transmitting cover, on the upper surface of which an object is placed; a bottom cover attached to the lower surface of the light transmitting cover; a substrate provided between the light transmitting cover and the bottom cover, having an LED mounted on a component surface on the light transmitting cover side and having a switch that turns the LED on and off mounted on a solder surface on the bottom cover side; batteries contained in a battery storage part of the bottom cover to supply electric power to the LED; two rubber pads attached to the bottom surface of the bottom cover; and a switch pad that is attached to the inside of the bottom cover in a vertically moveable manner and on which a switch pressing part facing the switch is arranged. The two rubber pads and the switch pad may be arranged near the outer periphery of the bottom of the bottom cover at approximately equal intervals in a circumferential direction, and the diameter of the switch pad may be set to just under ½ of the diameter of the LED coaster.
摘要:
Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要:
Provided are a poly crystalline silicon semiconductor device and a method of fabricating the same. Portions of a silicon layer except for gates are removed to reduce a parasitic capacitance caused from the silicon layer existing on gate bus lines. The silicon layer exists under the gates only, thus the parasitic capacitance is reduced and the deterioration and the delay of signals are prevented. Accordingly, the poly crystalline silicon semiconductor device, such as a thin film transistor, has excellent electric characteristics.
摘要:
A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.