公开(公告)号：US20230055839A1

公开(公告)日：2023-02-23

申请号：US17889114

申请日：2022-08-16

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Shin-Yee LU ,  Dimitri KLYACHKO ,  Ching Ling MENG ,  Xinkang TIAN

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/677

Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

公开(公告)号：US20230057763A1

公开(公告)日：2023-02-23

申请号：US17889077

申请日：2022-08-16

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Shin-Yee LU ,  Dimitri KLYACHKO ,  Ching Ling MENG ,  Xinkang TIAN

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/677

Abstract: A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component. A controller is configured to cause the processing chamber to perform the semiconductor manufacturing process on each respective wafer and to cause the optical diagnostic system to detect the optical signal during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

公开(公告)号：US20210193444A1

公开(公告)日：2021-06-24

申请号：US17197947

申请日：2021-03-10

Applicant: Tokyo Electron Limited

Inventor： Ching Ling MENG ,  Holger TUITJE ,  Qiang ZHAO ,  Hanyou CHU ,  Xinkang TIAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

公开(公告)号：US20240418501A1

公开(公告)日：2024-12-19

申请号：US18501672

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Holger TUITJE ,  Basanta BHADURI ,  Ching Ling MENG ,  Da SONG ,  Xinkang TIAN

IPC: G01B11/06

Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.

公开(公告)号：US20220099545A1

公开(公告)日：2022-03-31

申请号：US17034724

申请日：2020-09-28

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Ching Ling MENG

IPC: G01N15/02 ,  G01N15/06 ,  G01G9/00

Abstract: Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.