公开(公告)号：US20240419885A1

公开(公告)日：2024-12-19

申请号：US18535103

申请日：2023-12-11

Applicant: Tokyo Electron Limited

Inventor： Yan CHEN ,  Vi VUONG ,  Xinkang TIAN ,  Francisco MACHUCA

IPC: G06F30/398 ,  G06F119/18

Abstract: A method of film thickness modeling includes receiving optical data of a sample having a top layer and at least one underlying layer. First simulation data are obtained by inputting the optical data into a multi-layer model. When a GOF of the first simulation data is below a threshold, a simulated thickness is obtained by inputting the optical data into a top-layer model that is substantially unaffected by the at least one underlying layer. A starting point of the thickness of the multi-layer model is adjusted based on the simulated thickness. Second simulation data are obtained by inputting the optical data into the multi-layer model. When the GOF of the second simulation data is below the threshold, the starting point of the thickness in the multi-layer model is re-adjusted, and third simulation data are obtained by inputting the optical data into the multi-layer model.

公开(公告)号：US20220381612A1

公开(公告)日：2022-12-01

申请号：US17335814

申请日：2021-06-01

Applicant: Tokyo Electron Limited

Inventor： Yan CHEN ,  Xinkang TIAN

IPC: G01J3/02 ,  G01J3/28 ,  G01J3/18

Abstract: Aspects of the present disclosure provide a method for wavelength calibration of a spectrometer. The method can include receiving a calibration light signal having first spectral components of different first wavelengths; separating and projecting the first spectral components onto pixels of a detector of the spectrometer; establishing a relation between the first wavelengths and pixel numbers of first pixels on which the first spectral components are projected; calculating first residual errors between the first wavelengths and estimated wavelengths that are associated by the relation to the pixel numbers of the first pixels; receiving an optical signal having a second spectral component of a second wavelength; projecting the optical signal onto a second pixel; and calibrating the second wavelength based on a second residual error calculated based on one of the first residual errors that corresponds to a pair of the first pixels between which the second pixel is located.

公开(公告)号：US20210057195A1

公开(公告)日：2021-02-25

申请号：US16548333

申请日：2019-08-22

Applicant: Tokyo Electron Limited

Inventor： Yan CHEN ,  Xinkang TIAN ,  Vi VUONG

IPC: H01J37/32 ,  G06F17/16 ,  H01L21/3065 ,  H01L21/67

Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. OES data is acquired by a spectrometer in a plasma etch processing chamber. The acquired time-evolving spectral data is first filtered and de-meaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. Grouping of the principal components weights into two separate groups corresponding to positive and negative natural wavelengths, creates separate signed trends (synthetic wavelengths).

公开(公告)号：US20170314991A1

公开(公告)日：2017-11-02

申请号：US15648035

申请日：2017-07-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ching-Ling MENG ,  Holger TUITJE ,  Yan CHEN ,  Mihail MIHAYLOV

IPC: G01J3/443 ,  G01N21/31 ,  G01N21/68

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

公开(公告)号：US20240418501A1

公开(公告)日：2024-12-19

申请号：US18501672

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Holger TUITJE ,  Basanta BHADURI ,  Ching Ling MENG ,  Da SONG ,  Xinkang TIAN

IPC: G01B11/06

Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.

公开(公告)号：US20200292388A1

公开(公告)日：2020-09-17

申请号：US16820032

申请日：2020-03-16

Applicant: Tokyo Electron Limited

Inventor： Yan CHEN ,  Xinkang Tian ,  Zheng Yan

IPC: G01J3/28 ,  G01J3/02 ,  G06K9/62 ,  G06K9/46 ,  G06N3/08 ,  G06N20/00

Abstract: A data set is stored in memory circuitry that is indicative of a state of a semiconductor fabrication process or of semiconductor structure fabricated thereby. Features in the data set are discernable to an extent limited by a data resolution. A machine-learning model comprising parameters having respective values assigned thereto as constrained by a model training process is also stored in the memory circuitry. Processor circuitry communicatively coupled to the memory circuitry generates an output data set from the data set in accordance with the machine-learning model such that features in the output data set are discernable to an extent limited by an output data resolution that is finer than the data resolution of the data set.

公开(公告)号：US20220139743A1

公开(公告)日：2022-05-05

申请号：US17088885

申请日：2020-11-04

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Ching-Ling MENG ,  Xinkang TIAN

IPC: H01L21/67 ,  G01N21/55 ,  G01N21/95 ,  G01N23/2251

Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

公开(公告)号：US20150124250A1

公开(公告)日：2015-05-07

申请号：US14530164

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junwei BAO ,  Ching-Ling MENG ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Yan CHEN ,  Zheng YAN ,  Haixing ZOU ,  Hanyou CHU

IPC: G01J3/443 ,  G01N21/31

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract translation: 公开了一种用于测量半导体等离子体处理室中的等离子体的光发射的二维分布的方法，计算机方法，系统和装置。 所获得的等离子体光学发射的二维分布可以用于推断存在于等离子体中的某些化学物质的浓度的二维分布，并且因此为工艺开发提供了有用的工具，并为新的和改进的 加工工具开发。 所公开的技术在计算上是简单和便宜的，并且涉及将假设的光强度分布的扩展用于允许光强度的周向变化的基函数的总和。 合适的基函数的例子是泽尔尼克多项式。

公开(公告)号：US20140106477A1

公开(公告)日：2014-04-17

申请号：US14056059

申请日：2013-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yan CHEN ,  Serguei Komarov ,  Vi Vuong

IPC: H01L21/66 ,  G06F17/16 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

Abstract: Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

Abstract translation: 公开了一种使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。 光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。 首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。 可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。 公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程 端点。

公开(公告)号：US20230097892A1

公开(公告)日：2023-03-30

申请号：US18075058

申请日：2022-12-05

Applicant: Tokyo Electron Limited

Inventor： Yan CHEN ,  Xinkang TIAN

IPC: H01L21/66 ,  G01N21/71 ,  G01N21/95 ,  G01N21/88 ,  H01J37/32 ,  H01L21/3065 ,  G01J3/28 ,  G06T7/00

Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.