公开(公告)号：US20240105445A1

公开(公告)日：2024-03-28

申请号：US18470878

申请日：2023-09-20

Applicant: Tokyo Electron Limited

Inventor： Issei TAKEYASU ,  Tadahiro ISHIZAKA

IPC: H01L21/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/52 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/02271 ,  C23C16/06 ,  C23C16/405 ,  C23C16/52 ,  H01L21/67167 ,  H01L21/6838

Abstract: A film forming method includes: preparing, on a stage, a substrate having an insulating layer in which a recess defined by an upper portion, a side wall portion, and a bottom portion is formed, and a tungsten layer exposed from the bottom portion of the recess; removing a tungsten oxide film, which has been formed by oxidizing the tungsten layer at the bottom portion, by supplying TiCl4 gas to at least the bottom portion of the recess; and embedding a ruthenium film in the recess after removing the tungsten oxide film.

公开(公告)号：US20240153818A1

公开(公告)日：2024-05-09

申请号：US18550177

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Masato SAKAMOTO ,  Tadahiro ISHIZAKA ,  Issei TAKEYASU ,  Kohichi SATOH

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/16 ,  C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/76877 ,  C23C16/0227 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/46 ,  C23C16/52

Abstract: An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.