摘要:
A polymeric compound includes at least one monomeric unit of the following formula (I): wherein R1 is a hydrogen atom or a methyl group; and each of R2 and R3 is independently a hydrogen atom or a hydroxyl group. The polymeric compound may include the monomeric unit and at least one monomeric unit selected from monomeric units represented by the following formulae (IIa) and (IIb): wherein R1 is a hydrogen atom or a methyl group; each of R4 and R5 is, for example, a hydrogen atom, a hydroxyl group, an oxo group, or a carboxyl group, wherein R4 and R5 are not concurrently hydrogen atoms; and each of R7 and R8 is independently a hydrogen atom, a hydroxyl group, or an oxo group. The polymeric compound have a high etching resistance in addition to satisfactory transparency, alkali-solubility, and adhesion.
摘要翻译:聚合化合物包括至少一种下式(I)的单体单元:其中R1是氢原子或甲基; R2和R3各自独立地为氢原子或羟基。 聚合化合物可以包括单体单元和选自下式(IIa)和(IIb)表示的单体单元的至少一种单体单元:其中R 1是氢原子或甲基; R4和R5各自为例如氢原子,羟基,氧代基或羧基,其中R4和R5不同时为氢原子; R 7和R 8各自独立地为氢原子,羟基或氧代基。 除了令人满意的透明性,碱溶性和粘合性之外,高分子化合物具有高的耐蚀刻性。
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
A resist for alkali development, which comprises an alicyclic compound attached with an acidic substituent group exhibiting pKa of 7 to 11 in an aqueous solution of 25.degree. C. This alicyclic compound is preferably a copolymer comprising as a comonomer component a vinyl compound and exhibiting a light absorbency of 3 or less per 1 .mu.m to the light of 193 nm in wavelength.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.