公开(公告)号：US10483236B2

公开(公告)日：2019-11-19

申请号：US15693370

申请日：2017-08-31

申请人： Toshiba Memory Corporation

发明人： Masaji Iwamoto

IPC分类号： H01L25/065 ,  H01L23/498 ,  G11C29/12 ,  H01L23/00 ,  G11C5/02 ,  G11C5/06 ,  G11C7/04 ,  G11C29/48 ,  G11C29/04 ,  H01L23/31

摘要： A semiconductor device includes a substrate having first and second principal surfaces, and a semiconductor chip disposed on the first principal surface. The substrate includes a first conductor layer disposed on the first principal surface, a second conductor layer disposed on the second principal surface, at least one third conductive layer between the first conductive layer and the second conductive layer, a detection interconnection disposed in either the first conductive layer or the third conductive layer, and first and second pads disposed on the second conductive layer and connected to the detection interconnection. The detection interconnection is not part of signal interconnections that are used during operation of the semiconductor chip and is not electrically connected to any circuit of the semiconductor chip.

公开(公告)号：US10062627B2

公开(公告)日：2018-08-28

申请号：US15252158

申请日：2016-08-30

申请人： TOSHIBA MEMORY CORPORATION

发明人： Masaji Iwamoto

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/552 ,  H01L23/29

CPC分类号： H01L23/3135 ,  H01L21/56 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3731 ,  H01L23/552 ,  H01L23/562 ,  H01L23/564 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2924/15313 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes a substrate, semiconductor chips mounted on the substrate, a sealing resin layer that seals the semiconductor chips, and a film covering at least an upper surface of the sealing resin layer, the film made from a material selected from the group consisting of zinc, aluminum, manganese, alloys thereof, metal oxides, metal nitrides, and metal oxynitrides.

公开(公告)号：US09997470B2

公开(公告)日：2018-06-12

申请号：US15441465

申请日：2017-02-24

申请人： TOSHIBA MEMORY CORPORATION

发明人： Masaji Iwamoto ,  Takashi Yamazaki

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/50 ,  H01L23/00

CPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/50 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48095 ,  H01L2224/48175 ,  H01L2224/49176

摘要： Embodiments include a semiconductor manufacturing method comprising, providing an object to be processed, the object including a semiconductor element, a sealing resin layer sealing the semiconductor element, a ground terminal electrically connected to the semiconductor element and including a first protruding part protruding through a surface of the resin layer, and a signal terminal electrically connected to the semiconductor element and including a second protruding part protruding through the surface of the resin layer; positioning the object in a jig, wherein the jig covers the entire second protruding part of the signal terminal, and wherein the jig only partially covers the first protruding part of the ground terminal, such that at least a first portion of the first protruding part of the ground terminal is left uncovered by the jig; while the object is positioned in the jig, fabricating a conductive shield layer on the resin layer and at least some of the first portion of the first protruding part of the ground terminal, such that the shield layer is electrically connected to ground terminal.