公开(公告)号：US07923744B2

公开(公告)日：2011-04-12

申请号：US12755019

申请日：2010-04-06

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US20100230706A1

公开(公告)日：2010-09-16

申请号：US12755019

申请日：2010-04-06

申请人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/02

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US07768027B2

公开(公告)日：2010-08-03

申请号：US12184933

申请日：2008-08-01

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

公开(公告)号：US20090212312A1

公开(公告)日：2009-08-27

申请号：US12269499

申请日：2008-11-12

申请人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

公开(公告)号：US20090212311A1

公开(公告)日：2009-08-27

申请号：US12184933

申请日：2008-08-01

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

公开(公告)号：US20080277678A1

公开(公告)日：2008-11-13

申请号：US11801155

申请日：2007-05-08

申请人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

发明人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

IPC分类号： H01L29/22 ,  H01L21/00 ,  H01L27/15

CPC分类号： H01L33/22 ,  H01L33/38

摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.

摘要翻译： 一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。

公开(公告)号：US08247837B2

公开(公告)日：2012-08-21

申请号：US12421872

申请日：2009-04-10

申请人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/42

摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.

摘要翻译： 本发明公开了一种发光二极管。 在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠​​层结构。 依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。 多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。 每个层压结构由具有各自折射率的多个透明绝缘层组成。 另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率， 发光二极管。

公开(公告)号：US07804104B2

公开(公告)日：2010-09-28

申请号：US12421869

申请日：2009-04-10

申请人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L27/15

CPC分类号： H01L33/46 ,  H01L33/387 ,  H01L2933/0083

摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.

摘要翻译： 本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。 依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。 在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。 每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得 说每个层压结构。 由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

公开(公告)号：US07956373B2

公开(公告)日：2011-06-07

申请号：US12081595

申请日：2008-04-17

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22

摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light extraction area of the sidewall, and consequently enhances the light extraction efficiency of the semiconductor light-emitting device.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。 多层结构形成在基板上并且包括发光区域。 最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。 此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。 第一种模式与第二种模式不同。 至少一个电极形成在最上层。 因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

公开(公告)号：US20100025704A1

公开(公告)日：2010-02-04

申请号：US12181916

申请日：2008-07-29

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/46 ,  H01L33/405

摘要： A method for fabricating a high efficiency lighting device and the structure thereof are disclosed. The method includes the following steps: providing a light emitting diode structure; attaching a distributed-Bragg reflecting layer (DBR) to the light emitting diode structure by vapor deposition; and connecting the light emitting diode structure to a eutectic layer through the distributed-Bragg reflecting layer to form the high efficiency lighting device.

摘要翻译： 公开了一种制造高效照明装置的方法及其结构。 该方法包括以下步骤：提供发光二极管结构; 通过气相沉积将分布布拉格反射层（DBR）附着到发光二极管结构; 并且通过分布式布拉格反射层将发光二极管结构连接到共晶层，以形成高效照明装置。