公开(公告)号：US20080277678A1

公开(公告)日：2008-11-13

申请号：US11801155

申请日：2007-05-08

申请人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

发明人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

IPC分类号： H01L29/22 ,  H01L21/00 ,  H01L27/15

CPC分类号： H01L33/22 ,  H01L33/38

摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.

摘要翻译： 一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。

公开(公告)号：US08659045B2

公开(公告)日：2014-02-25

申请号：US11848458

申请日：2007-08-31

申请人： Tzong-Liang Tsai ,  Yu-Chu Li ,  Chiung-Chi Tsai

发明人： Tzong-Liang Tsai ,  Yu-Chu Li ,  Chiung-Chi Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.

摘要翻译： 本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

公开(公告)号：US07659557B2

公开(公告)日：2010-02-09

申请号：US11798873

申请日：2007-05-17

申请人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L33/00

CPC分类号： H01L33/26 ,  H01L33/40

摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.

摘要翻译： 本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（ 或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

公开(公告)号：US20080023709A1

公开(公告)日：2008-01-31

申请号：US11798873

申请日：2007-05-17

申请人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/26 ,  H01L33/40

摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.

摘要翻译： 本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（ 或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

公开(公告)号：US20090200667A1

公开(公告)日：2009-08-13

申请号：US12426061

申请日：2009-04-17

申请人： Chiung-Chi TSAI ,  Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Chiung-Chi TSAI ,  Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L23/532

CPC分类号： H01L33/26 ,  H01L33/40

摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.

摘要翻译： 本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。 根据本发明优选实施方案的欧姆接触膜的组成由通式MxQzNy表示，其中M表示II族化学元素，Q表示IV族化学元素，N表示V基团化学元素， = x <= 3,1 <= y <= 3,1 <= z <= 3，x和y和z是摩尔数。

公开(公告)号：US20080054289A1

公开(公告)日：2008-03-06

申请号：US11848458

申请日：2007-08-31

申请人： Tzong-Liang Tsai ,  Yu-Chu Li ,  Chiung-Chi Tsai

发明人： Tzong-Liang Tsai ,  Yu-Chu Li ,  Chiung-Chi Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.

摘要翻译： 本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

公开(公告)号：US20080023835A1

公开(公告)日：2008-01-31

申请号：US11797851

申请日：2007-05-08

申请人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L23/52

CPC分类号： H01L33/26 ,  H01L33/40

摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers.

摘要翻译： 本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。 根据本发明优选实施方案的欧姆接触膜的组成由通式M X N Y Y表示，其中M表示II族化学元素，N 表示V族化学元素，1 <= x <= 3,1 <= y <= 3，x和y是摩尔数。

公开(公告)号：US20090029497A1

公开(公告)日：2009-01-29

申请号：US12246339

申请日：2008-10-06

申请人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L21/00

CPC分类号： H01L33/26 ,  H01L33/40

摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a H-V group (or II-W-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.

摘要翻译： 本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括衬底，第一导电类型半导体材料层，发光层，第一电极，第二导电类型半导体材料层，HV组（或II -WV族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

公开(公告)号：US20090008626A1

公开(公告)日：2009-01-08

申请号：US12000610

申请日：2007-12-14

申请人： Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L29/06 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/02 ,  H01L33/26

摘要： The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.

摘要翻译： 本发明提供一种光电器件，其包括第一电极，第一电极上的衬底; 所述衬底上的缓冲层，其中所述缓冲层在所述衬底上包括第一氮化镓基化合物层，所述第二氮化镓基化合物层和所述第一氮化镓基化合物层和所述第一氮化镓基化合物层之间的II-V族化合物层 第二氮化镓基化合物层; 在缓冲层上的第一半导体导电层; 在第一半导体导电层上的有源层，其中有源层是不均匀的多量子阱; 有源层上的半导体导电层; 第二半导体层上的透明层; 和透明层上的第二电极。

公开(公告)号：US20090008624A1

公开(公告)日：2009-01-08

申请号：US11984062

申请日：2007-11-13

申请人： Tzong-Liang Tsai ,  Yu-Chu Li

发明人： Tzong-Liang Tsai ,  Yu-Chu Li

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/24 ,  H01L33/32

摘要： The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer.

摘要翻译： 本发明提供一种光电器件，其包括第一电极，第一电极上的衬底和衬底上的缓冲层。 缓冲层还包括在基板上的第一氮化镓基化合物层，第一氮化镓基化合物层上的II-V族化合物层，II-V族化合物层上的第二氮化镓基化合物层和 第二氮化镓基化合物层上的第三氮化镓基化合物层。 然后，在缓冲层上形成第一半导体导电层; 在第一半导体导电层上形成有源层，其中有源层是不均匀的多量子阱; 在所述有源层上的第二半导体导电层; 第二半导体层上的透明导电层; 和在透明导电层上的第二电极。