公开(公告)号：US12279536B2

公开(公告)日：2025-04-15

申请号：US18610212

申请日：2024-03-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Hsin-Fu Huang ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H10N50/80 ,  G11C11/16 ,  H10N50/01 ,  H10N50/85 ,  H01F10/32 ,  H01F41/32

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

公开(公告)号：US11450564B2

公开(公告)日：2022-09-20

申请号：US16568266

申请日：2019-09-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Li-Han Chen ,  Hsiang-Wen Ke

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/285

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to two sides of the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a contact hole in the ILD layer to expose the source/drain region; forming a barrier layer in the contact hole; performing an anneal process; and performing a plasma treatment process to inject nitrogen into the contact hole.

公开(公告)号：US20230125856A1

公开(公告)日：2023-04-27

申请号：US17533146

申请日：2021-11-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsiang-Wen Ke ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Jin-Yan Chiou

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

Abstract: A method for fabricating a semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a barrier layer in the trench, forming a nucleation layer on the barrier layer, performing an anneal process to form a silicide layer, forming a bulk layer on the silicide layer, and forming a magnetic tunneling junction (MTJ) on the bulk layer.

公开(公告)号：US20210343931A1

公开(公告)日：2021-11-04

申请号：US16882552

申请日：2020-05-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Hsin-Fu Huang ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

公开(公告)号：US20250081568A1

公开(公告)日：2025-03-06

申请号：US18950155

申请日：2024-11-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L29/45 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

公开(公告)号：US20230094638A1

公开(公告)日：2023-03-30

申请号：US17510394

申请日：2021-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Hsiang-Wen Ke

IPC: H01L29/45 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

公开(公告)号：US20220384710A1

公开(公告)日：2022-12-01

申请号：US17361331

申请日：2021-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Jin-Yan Chiou ,  Hsiang-Wen Ke

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A method for fabricating a magnetic random access memory (MRAM) device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, forming a first top electrode on the MTJ stack, and then forming a second top electrode on the first top electrode. Preferably, the first top electrode includes a gradient concentration while the second top electrode includes a non-gradient concentration.

公开(公告)号：US20210050253A1

公开(公告)日：2021-02-18

申请号：US16568266

申请日：2019-09-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jin-Yan Chiou ,  Wei-Chuan Tsai ,  Yen-Tsai Yi ,  Li-Han Chen ,  Hsiang-Wen Ke

IPC: H01L21/768 ,  H01L21/285 ,  H01L29/66

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to two sides of the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a contact hole in the ILD layer to expose the source/drain region; forming a barrier layer in the contact hole; performing an anneal process; and performing a plasma treatment process to inject nitrogen into the contact hole.

公开(公告)号：US20250089448A1

公开(公告)日：2025-03-13

申请号：US18381646

申请日：2023-10-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Jin-Yan Chiou ,  Hsiang-Wen Ke

IPC: H10K50/81 ,  H10K50/11 ,  H10K50/82 ,  H10K50/856 ,  H10K59/131

Abstract: An organic light-emitting diode display device includes a first light-emitting layer, a first anode, a first reflective pattern, and a dielectric material. The first light-emitting layer, the first anode, and the first reflective pattern are located in a first sub-pixel region. The first anode is disposed under the first light-emitting layer in a vertical direction, and the first reflective pattern is disposed under the first anode in the vertical direction. The dielectric material is partly disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected with the first anode.

公开(公告)号：US20240397832A1

公开(公告)日：2024-11-28

申请号：US18791383

申请日：2024-07-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Jin-Yan Chiou ,  Hsiang-Wen Ke

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunneling junction (MTJ) on a substrate, a first top electrode on the MTJ, a second top electrode on and directly contacting the first top electrode, and a spacer adjacent to the MTJ. Preferably, the first top electrode includes a gradient concentration while the second top electrode includes a non-gradient concentration.