公开(公告)号：US09773880B2

公开(公告)日：2017-09-26

申请号：US14877926

申请日：2015-10-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US20240097038A1

公开(公告)日：2024-03-21

申请号：US17964925

申请日：2022-10-13

Applicant: United Microelectronics Corp.

Inventor： Yi Chuen Eng ,  Tzu-Feng Chang ,  Teng-Chuan Hu ,  Yi-Wen Chen ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66795

Abstract: A semiconductor device, including a substrate, a first source/drain region, a second source/drain region, and a gate structure, is provided. The substrate has an extra body portion and a fin protruding from a top surface of the substrate, wherein the fin spans the extra body portion. The first source/drain region and the second source/drain region are in the fin. The gate structure spans the fin, is located above the extra body portion, and is located between the first source/drain region and the second source/drain region.

公开(公告)号：US11616035B2

公开(公告)日：2023-03-28

申请号：US17397765

申请日：2021-08-09

Applicant: United Microelectronics Corp.

Inventor： Teng-Chuan Hu ,  Chun-Hung Chen ,  Chu-Fu Lin

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/18

Abstract: A semiconductor structure, including a substrate and multiple chips, is provided. The chips are stacked on the substrate. Each of the chips has a first side and a second side opposite to each other. Each of the chips includes a transistor adjacent to the first side and a storage node adjacent to the second side. Two adjacent chips are bonded to each other. The transistor of one of the two adjacent chips is electrically connected to the storage node of the other one of the two adjacent chips to form a memory cell.

公开(公告)号：US20230025541A1

公开(公告)日：2023-01-26

申请号：US17397765

申请日：2021-08-09

Applicant: United Microelectronics Corp.

Inventor： Teng-Chuan Hu ,  Chun-Hung Chen ,  Chu-Fu Lin

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor structure, including a substrate and multiple chips, is provided. The chips are stacked on the substrate. Each of the chips has a first side and a second side opposite to each other. Each of the chips includes a transistor adjacent to the first side and a storage node adjacent to the second side. Two adjacent chips are bonded to each other. The transistor of one of the two adjacent chips is electrically connected to the storage node of the other one of the two adjacent chips to form a memory cell.

公开(公告)号：US12034038B2

公开(公告)日：2024-07-09

申请号：US18119043

申请日：2023-03-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Teng-Chuan Hu ,  Chu-Fu Lin ,  Chun-Hung Chen

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/91

Abstract: A method for manufacturing a capacitor structure is provided. A substrate having a first side and a second side opposite to the first side is provided. A plurality of first trenches are formed on the first side. A first capacitor is formed extending along the first side and into the first trenches. A plurality of second trenches are formed on the second side. A second capacitor is formed extending along the second side and into the second trenches.

公开(公告)号：US20190013259A1

公开(公告)日：2019-01-10

申请号：US15642349

申请日：2017-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Teng-Chuan Hu ,  Chun-Hung Chen ,  Chu-Fu Lin ,  Chun-Ting Yeh ,  Chung-Hsing Kuo ,  Ming-Tse Lin

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via.

公开(公告)号：US20170352736A1

公开(公告)日：2017-12-07

申请号：US15682525

申请日：2017-08-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： YI CHUEN ENG ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US12040354B2

公开(公告)日：2024-07-16

申请号：US18119009

申请日：2023-03-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Teng-Chuan Hu ,  Chu-Fu Lin ,  Chun-Hung Chen

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/91

Abstract: A capacitor structure comprises a substrate having a first side, a second side opposite to the first side and an upper surface corresponding to the first side; a plurality of first trenches formed on the first side of the substrate, disposed along a first direction and a second direction parallel to the upper surface, and penetrating the substrate along a third direction, the first direction, the second direction and the third direction orthogonal to each other; a plurality of second trenches formed on the second side of the substrate and penetrating the substrate along the third direction, the first trenches and the second trenches separated from each other in the first direction; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches.

公开(公告)号：US10068979B2

公开(公告)日：2018-09-04

申请号：US15677035

申请日：2017-08-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US09923071B2

公开(公告)日：2018-03-20

申请号：US15682525

申请日：2017-08-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.