公开(公告)号：US11340440B2

公开(公告)日：2022-05-24

申请号：US16622868

申请日：2019-03-22

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Chao Wang ,  Xueke Gou ,  Jing Jiang ,  Jun Hu ,  Zezhan Zhang ,  Yang Yang ,  Ying Duan ,  Congjun Wu ,  Yueming Wang

IPC: G02B21/36 ,  G02B21/02 ,  H01L21/67 ,  G02B21/00 ,  G02B17/08 ,  G02B21/04 ,  C23C16/52 ,  H01L21/02

Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system provided by the present invention has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.

公开(公告)号：US11410849B2

公开(公告)日：2022-08-09

申请号：US16618354

申请日：2019-03-22

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Chao Wang ,  Ying Duan ,  Jing Jiang ,  Jun Hu ,  Zezhan Zhang ,  Yang Yang ,  Xueke Gou ,  Congjun Wu

IPC: H01L21/20 ,  G02B27/10 ,  G02B27/30 ,  H01L21/02 ,  H01L21/66 ,  G01J5/00 ,  G02B27/14 ,  H01L21/64

Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

公开(公告)号：US20200209606A1

公开(公告)日：2020-07-02

申请号：US16622868

申请日：2019-03-22

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Chao Wang ,  Xueke Gou ,  Jing Jiang ,  Jun Hu ,  Zezhan Zhang ,  Yang Yang ,  Ying Duan ,  Congjun Wu ,  Yueming Wang

IPC: G02B21/36 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67 ,  G02B21/02

Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.

公开(公告)号：US20210143014A1

公开(公告)日：2021-05-13

申请号：US16618354

申请日：2019-03-22

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Chao Wang ,  Ying Duan ,  Jing Jiang ,  Jun Hu ,  Zezhan Zhang ,  Yang Yang ,  Xueke Gou ,  Congjun Wu

IPC: H01L21/20 ,  H01L21/02 ,  G02B27/10 ,  G02B27/30

Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.