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公开(公告)号:US11996615B2
公开(公告)日:2024-05-28
申请号:US17448563
申请日:2021-09-23
Inventor: Zaiping Nie , Yanhui Liu , Xianzheng Zong , Jun Hu
IPC: H01Q15/16 , H01Q3/18 , H01Q3/26 , H01Q15/14 , H01Q19/17 , H01Q21/28 , H01Q25/00 , H04B1/00 , H04B7/0413 , H04B7/0417 , H04B7/0456 , H04B7/06 , H04B7/08
CPC classification number: H01Q15/166 , H01Q3/18 , H01Q3/2605 , H01Q15/14 , H01Q19/17 , H01Q21/28 , H01Q25/007 , H04B1/0057 , H04B7/0413 , H04B7/0417 , H04B7/046 , H04B7/0671 , H04B7/084
Abstract: This document discloses a reflector antenna system with movable MIMO multiple feeds and adaptive field focusing method for wireless communication in multipath fading environment; the system comprises antenna reflector, multiple feeds, the equal number of the signal receiving channels and signal transmitting channels to the feeds, all the channels are capable to measure and adjust the amplitude and time delay of signals, and the method for amplitude and time delay adjustment of the powered signals. In signal receiving mode the antenna system makes the signal components arrived through unknown multipath superimpose synchronously; in signal transmitting mode, the system let the wave components radiated from different transmitting channels superimpose synchronously, realizing adaptive field focusing at the antenna of the communication target. This antenna system is suitable for point to point wireless communication in wireless propagation environment with multipath fading effect, showing remarkable improvement of SNR of the signals transmitted and received.
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公开(公告)号:US11381115B2
公开(公告)日:2022-07-05
申请号:US17209310
申请日:2021-03-23
Inventor: Xianzheng Zong , Zaiping Nie , Wen Xiong , Jun Hu , Shiwen Yang , Xuyu Ye , Xiaofeng Que , Yongpin Chen
Abstract: The disclosure provides a wireless charging device including a metal frequency-selective box and an internal charging system disposed inside the metal frequency-selective box for wireless charging. The internal charging system includes a multi-antenna subsystem including N antenna units; N is an integer greater than 2, and the antenna units are dipole antennas, microstrip patch antennas, microstrip slot antennas, helical antennas, or dielectric resonator antennas. The N antenna units are evenly disposed, in a two-dimensional ring, on inner sides of four side faces of the metal frequency-selective box, or disposed on a three-dimensional curved surface of the entire inner side of the metal frequency-selective box. The device to be energized is disposed in the metal frequency-selective box and is surrounded by the N antenna units.
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3.
公开(公告)号:US20210143014A1
公开(公告)日:2021-05-13
申请号:US16618354
申请日:2019-03-22
Inventor: Chao Wang , Ying Duan , Jing Jiang , Jun Hu , Zezhan Zhang , Yang Yang , Xueke Gou , Congjun Wu
Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.
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4.
公开(公告)号:US11410849B2
公开(公告)日:2022-08-09
申请号:US16618354
申请日:2019-03-22
Inventor: Chao Wang , Ying Duan , Jing Jiang , Jun Hu , Zezhan Zhang , Yang Yang , Xueke Gou , Congjun Wu
Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.
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5.
公开(公告)号:US20200209606A1
公开(公告)日:2020-07-02
申请号:US16622868
申请日:2019-03-22
Inventor: Chao Wang , Xueke Gou , Jing Jiang , Jun Hu , Zezhan Zhang , Yang Yang , Ying Duan , Congjun Wu , Yueming Wang
Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.
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公开(公告)号:US10670467B2
公开(公告)日:2020-06-02
申请号:US15865297
申请日:2018-01-09
Inventor: Chao Wang , Jun Hu , Fei Wang , Zezhan Zhang , Jing Jiang , Jie Xiong , Yueming Wang , Tiezhong Ma , Dong Yan , Xueke Gou , Ting Zhou , Yi Niu , Pei Huang
Abstract: A device for measuring surface-temperature of a turbine blade, the device including a probe having a front-end mirror for receiving infrared radiation of a surface on the blade, a collimation lens for refracted the infrared radiation, a PD detector to receive the infrared radiation, and a focal-length servo; and a radial-scanning servo connected to the probe. The front-end mirror, the collimation lens, and PD detector are disposed along the optical axis of the collimation lens. The focal-length servo is adapted to move the collimation lens along the optical axis of the collimation lens. The radial-scanning servo is adapted to move the probe along the optical axis of the collimation lens. The device of the invention is capable of accurately targeting a particular point on the blade having an irregular shape for temperature measurement to accurately detect the temperature distribution on the surface of the blade.
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公开(公告)号:US10670464B2
公开(公告)日:2020-06-02
申请号:US15871033
申请日:2018-01-14
Inventor: Chao Wang , Ying Duan , Jun Hu , Zezhan Zhang , Yang Yang , Xueke Gou , Fei Wang , Jing Jiang , Jinguang Lv , Yueming Wang , Hongchuan Jiang , Li Du , Jiexiong Ding , Jingqiu Liang , Xianfu Liu , Xiaojiang Shi , Bing Xiong
Abstract: A method of collecting radiation information of a turbine blade, the method including: 1) collecting a radiated light from the surface of the turbine blade, analyzing the radiated light using a spectrometer to calculate compositions and corresponding concentrations of combustion gas; 2) calculating an absorption coefficient of the combustion gas at different concentrations; 3) calculating a total absorption rate of the combustion gas at different radiation wavelengths under different concentrations of component gases; 4) obtaining a relationship between the radiation and a wavelength; 5) finding at least 3 bands with a least gas absorption rate; 6) calculating a distance between a wavelength of a strongest radiation point of the turbine blade and the center wavelength, and selecting three central wavelengths closest to the wavelength with the strongest radiation; and 7) acquiring radiation data of the turbine blade in the windows obtained in 6).
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公开(公告)号:US11988800B2
公开(公告)日:2024-05-21
申请号:US17851348
申请日:2022-06-28
Inventor: Guoyun Guan , Min Meng , Jun Hu , Zaiping Nie
Abstract: A method of reducing or rejecting common mode interference and a circuit for electromagnetic induction logging with improved common mode interference reduction or rejection are disclosed, which are useful in the field of electromagnetic induction logging technology. Accurate formation signals are calculated based on phases and amplitudes of common mode signals, which do not change with the coil access mode, and phases of differential signals, which are reversed with amplitudes unaltered when the coil is connected reversely. This provides a mechanism to effectively eliminate the influence of common mode interference even when the common mode interference is greater in amplitude than the signals from a geological formation.
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公开(公告)号:US11340440B2
公开(公告)日:2022-05-24
申请号:US16622868
申请日:2019-03-22
Inventor: Chao Wang , Xueke Gou , Jing Jiang , Jun Hu , Zezhan Zhang , Yang Yang , Ying Duan , Congjun Wu , Yueming Wang
Abstract: A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system provided by the present invention has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.
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公开(公告)号:US11085829B2
公开(公告)日:2021-08-10
申请号:US15950143
申请日:2018-04-10
Inventor: Chao Wang , Yang Yang , Jing Jiang , Chengui Zhang , Zezhan Zhang , Fei Wang , Ying Duan , Jun Hu , Yueming Wang , Hongchuan Jiang , Huiyuan Geng , Jiexiong Ding , Li Du
Abstract: An infrared temperature-measurement probe, including: a probe housing; a reflector; and a reflector adjusting mechanism. The probe housing includes an inner wall, an outer wall, a cooling channel sandwiched between the inner wall and the outer wall, a chamber surrounded by the inner wall, and a light transmission hole communicating with the chamber. The reflector includes a mirror and a mirror frame. The reflector adjusting mechanism includes a motion controller, a drive coupling, and three control rods. The reflector and the three control rods are disposed in the chamber of the probe housing. The motion controller is disposed outside the chamber of the probe housing. The drive coupling is disposed between the motion controller and the three control rods, and the motion controller is adapted to move each of the three control rods via the drive coupling. The mirror is imbedded in and is supported by the mirror frame.
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