Device and method for measuring film longitudinal temperature field during nitride epitaxial growth

    公开(公告)号:US20210143014A1

    公开(公告)日:2021-05-13

    申请号:US16618354

    申请日:2019-03-22

    Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

    Self-cooled four-shaft turbine panoramic temperature measuring device

    公开(公告)号:US20220099496A1

    公开(公告)日:2022-03-31

    申请号:US17387527

    申请日:2021-07-28

    Abstract: A four-shaft panoramic scanning temperature measuring device with a circulating water-cooling device is provided, which not only improves the working reliability of the probe, but also increases the overall flexibility and scanning measurement efficiency. The circulating water-cooling device is self-cooled. Compared with the conventional single-circulation water-cooling way, the design of five cooling cavities can achieve higher circulating water-cooling efficiency. The four-shaft structure includes a shaft structure for translation, a shaft structure for rotation, a shaft structure for swinging, and a shaft structure with coaxial sight pipe and light pipe. The design of the four-shaft structure is able to panoramically scan the high-temperature components inside the turbine. The temperature measuring device integrates functions of cooling, swinging, translating and rotating together, which solves problems of large size and complex control of the conventional temperature measuring device.

    Method for preparing super capacitor electrode material Ni doped CoP3/foam nickel

    公开(公告)号:US20210090819A1

    公开(公告)日:2021-03-25

    申请号:US17065444

    申请日:2020-10-07

    Abstract: A method for preparing a supercapacitor electrode material Ni doped CoP3/Ni foam is provided, and the CoP3 is applied to the supercapacitor for the first time. The method belongs to a technical field of synthesis and preparation of supercapacitor materials. The present invention adopts a low-temperature phosphating process to prepare the Ni-doped CoP3/foamed nickel as the electrode material of the supercapacitor, so as to provide advantages such as simple synthesis process, easy control, low cost and high specific capacity. The supercapacitor electrode material Ni doped CoP3/Ni foam prepared by the present invention has a hierarchical structure and a large specific surface area, which is beneficial to shorten an ion transmission path, reduce an interface resistance between the electrode material and electrolyte, provide more active sites, and provide a higher specific capacity in alkaline electrolyte. The electrode material shows great potential in electrochemical energy storage.

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