公开(公告)号：US20160020139A1

公开(公告)日：2016-01-21

申请号：US14478609

申请日：2014-09-05

Applicant: United Microelectronics Corp.

Inventor： Wen-Yi Teng ,  Yuh-Min Lin ,  Chih-Chien Liu ,  Chieh-Wen Lo

IPC: H01L21/762 ,  H01L23/58 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/762 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A gap-filling dielectric layer, method for fabricating the same and applications thereof are disclosed. A silicon-containing dielectric layer is firstly deposited on a substrate. The silicon-containing dielectric layer is then subjected to a curing process, an in-situ wetting treatment and an annealing process in sequence, whereby a gap-filling dielectric layer with a nitrogen atom density less than 1×1022 atoms/cm3 is formed.

Abstract translation: 公开了间隙填充介电层，其制造方法及其应用。 首先在基板上沉积含硅介电层。 然后对含硅电介质层进行固化处理，原位润湿处理和退火处理，由此形成氮原子密度小于1×1022原子/ cm3的间隙填充介电层。