公开(公告)号：US09536922B2

公开(公告)日：2017-01-03

申请号：US14558686

申请日：2014-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Lai ,  Chih-Hong Wu ,  Feng-Ying Hsu

IPC: H01L21/84 ,  H01L23/48 ,  H01L27/146 ,  H01L21/48 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L27/14683 ,  H01L21/02233 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/481 ,  H01L27/14632 ,  H01L27/14687

Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.

Abstract translation: 具有不对称壁的凹部的制造方法包括提供包括顶表面的基底的步骤。 在衬底中形成凹部，其中凹部包括第一壁，第二壁和底部。 形成图案化掩模以覆盖基板。 与第二壁相邻的顶表面的一部分通过图案化掩模曝光。 最后，去除衬底以形成倾斜壁，其中倾斜壁，第一壁和底部形成具有不对称壁的凹部。

公开(公告)号：US20150085234A1

公开(公告)日：2015-03-26

申请号：US14034396

申请日：2013-09-23

Applicant: United Microelectronics Corp.

Inventor： Yi-Ming Hsu ,  Feng-Ying Hsu ,  Chieh-Yu Tsai

IPC: G02F1/1335

CPC classification number: G02F1/133553 ,  G02B5/0816 ,  G02B5/0875 ,  G02F1/134336 ,  G02F1/136277

Abstract: The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second minor layer is disposed on the second dielectric layer.

Abstract translation: 本发明提供一种包括硅衬底，第一介电层，第一镜层，第二介电层和第二镜层的LCOS器件。 第一电介质层设置在硅衬底上。 第一镜层设置在第一电介质层上。 第二介电层设置在第一镜层上。 第二次要层设置在第二电介质层上。

公开(公告)号：US20160155764A1

公开(公告)日：2016-06-02

申请号：US14558686

申请日：2014-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Lai ,  Chih-Hong Wu ,  Feng-Ying Hsu

IPC: H01L27/146 ,  H01L21/311 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L27/14683 ,  H01L21/02233 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/481 ,  H01L27/14632 ,  H01L27/14687

Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.

Abstract translation: 具有不对称壁的凹部的制造方法包括提供包括顶表面的基底的步骤。 在衬底中形成凹部，其中凹部包括第一壁，第二壁和底部。 形成图案化掩模以覆盖基板。 与第二壁相邻的顶表面的一部分通过图案化掩模曝光。 最后，去除衬底以形成倾斜壁，其中倾斜壁，第一壁和底部形成具有不对称壁的凹部。

公开(公告)号：US09341884B2

公开(公告)日：2016-05-17

申请号：US14034396

申请日：2013-09-23

Applicant: United Microelectronics Corp.

Inventor： Yi-Ming Hsu ,  Feng-Ying Hsu ,  Chieh-Yu Tsai

IPC: G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02B5/08

CPC classification number: G02F1/133553 ,  G02B5/0816 ,  G02B5/0875 ,  G02F1/134336 ,  G02F1/136277

Abstract: The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.

Abstract translation: 本发明提供一种包括硅衬底，第一介电层，第一镜层，第二介电层和第二镜层的LCOS器件。 第一电介质层设置在硅衬底上。 第一镜层设置在第一电介质层上。 第二介电层设置在第一镜层上。 第二镜层设置在第二介质层上。