公开(公告)号：US09563738B2

公开(公告)日：2017-02-07

申请号：US14690481

申请日：2015-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hung Chen ,  Chin-Lung Lin ,  Kuan-Wen Fang ,  Po-Ching Su ,  Hung-Wei Lin ,  Sheng-Lung Teng ,  Lun-Wen Yeh

IPC: G06F17/50 ,  G03F1/36 ,  H01L21/768

CPC classification number: G06F17/5081 ,  G03F1/36 ,  H01L21/76807

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract translation: 提供光学邻近校正（OPC）过程。 该方法包括接收对应于半导体结构的第一结构的第一图案，以及对应于所述半导体结构的第二结构的第二图案。 接下来，对第一图案执行第一OPC处理以获得修改的第一图案，其中修改的第一图案具有关于第一图案的第一移位。 对第二图案执行第二OPC处理以获得修订的第二图案，其中第二OPC处理包括根据第一移位移动第二图案。

公开(公告)号：US20240266286A1

公开(公告)日：2024-08-08

申请号：US18118093

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Wei Huang ,  Po-Hung Chen ,  Chun-Cheng Yu ,  I-Hsien Liu ,  Ho-Yu Lai ,  Kuan-Wen Fang ,  Chih-Sheng Chang

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76892

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.

公开(公告)号：US20150137369A1

公开(公告)日：2015-05-21

申请号：US14607051

申请日：2015-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Wen Fang ,  Chin-Lung Lin ,  Kuo-Chang Tien ,  Yi-Hsiu Lee ,  Chien-Hsiung Wang

IPC: H01L23/528 ,  G03F1/36 ,  H01L23/532 ,  G06F17/50 ,  H01L23/522

CPC classification number: H01L23/528 ,  G03F1/144 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5077 ,  G06T2207/30148 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based on a position of the interconnect patterns so as to generate a convex portion and a concave portion respectively on two sides of each of the parallel line patterns. Portions of the line pattern in front of and behind the convex portion and the concave portion are straight lines and have an identical critical dimension.

Abstract translation: 由计算机系统执行的用于修改线路图案的光学邻近校正的方法包括以下步骤。 首先，提供具有与平行线图案相对布置的平行线图案和互连图案的集成电路布局。 然后，使用计算机基于互连图案的位置来修改集成电路布局，以便分别在每个平行线图案的两侧上产生凸部和凹部。 在凸部和凹部之前和之后的线图案的部分是直线并且具有相同的临界尺寸。

公开(公告)号：US09530731B2

公开(公告)日：2016-12-27

申请号：US14607051

申请日：2015-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Wen Fang ,  Chin-Lung Lin ,  Kuo-Chang Tien ,  Yi-Hsiu Lee ,  Chien-Hsiung Wang

IPC: G03F1/00 ,  G06F17/50 ,  H01L23/528 ,  G03F1/36 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/528 ,  G03F1/144 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5077 ,  G06T2207/30148 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based on a position of the interconnect patterns so as to generate a convex portion and a concave portion respectively on two sides of each of the parallel line patterns. Portions of the line pattern in front of and behind the convex portion and the concave portion are straight lines and have an identical critical dimension.

Abstract translation: 由计算机系统执行的用于修改线路图案的光学邻近校正的方法包括以下步骤。 首先，提供具有与平行线图案相对布置的平行线图案和互连图案的集成电路布局。 然后，使用计算机基于互连图案的位置来修改集成电路布局，以便分别在每个平行线图案的两侧上产生凸部和凹部。 在凸部和凹部之前和之后的线图案的部分是直线并且具有相同的临界尺寸。

公开(公告)号：US20160306912A1

公开(公告)日：2016-10-20

申请号：US14690481

申请日：2015-04-20

Applicant: United Microelectronics Corp.

Inventor： Yen-Hung Chen ,  Chin-Lung Lin ,  Kuan-Wen Fang ,  Po-Ching Su ,  Hung-Wei Lin ,  Sheng-Lung Teng ,  Lun-Wen Yeh

IPC: G06F17/50 ,  H01L21/768 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/36 ,  H01L21/76807

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract translation: 提供光学邻近校正（OPC）过程。 该方法包括接收对应于半导体结构的第一结构的第一图案，以及对应于所述半导体结构的第二结构的第二图案。 接下来，对第一图案执行第一OPC处理以获得修改的第一图案，其中修改的第一图案具有关于第一图案的第一移位。 对第二图案执行第二OPC处理以获得修订的第二图案，其中第二OPC处理包括根据第一移位移动第二图案。

公开(公告)号：US08977988B2

公开(公告)日：2015-03-10

申请号：US13859718

申请日：2013-04-09

Applicant: United Microelectronics Corp.

Inventor： Kuan-Wen Fang ,  Chin-Lung Lin ,  Kuo-Chang Tien ,  Yi-Hsiu Lee ,  Chien-Hsiung Wang

IPC: G06F17/50 ,  G06K9/00

CPC classification number: H01L23/528 ,  G03F1/144 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5077 ,  G06T2207/30148 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of optical proximity correction executed by a computer system and integrated circuit layout formed by the same, the step of optical proximity correction comprises: providing an integrated circuit layout with a plurality of parallel line patterns, wherein one side of at least one line pattern is provided with a convex portion; and modifying the integrated circuit layout by forming a concave portion corresponding to the convex portion at the other side of the line pattern.

Abstract translation: 由计算机系统执行的光学邻近校正方法和由其形成的集成电路布局的方法，光学邻近校正步骤包括：提供具有多条平行线图案的集成电路布局，其中至少一条线图案的一侧 设置有凸部; 以及通过在所述线图案的另一侧形成与所述凸部对应的凹部来修改所述集成电路布局。

公开(公告)号：US20140304666A1

公开(公告)日：2014-10-09

申请号：US13859718

申请日：2013-04-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Wen Fang ,  Chin-Lung Lin ,  Kuo-Chang Tien ,  Yi-Hsiu Lee ,  Chien-Hsiung Wang

IPC: G06F17/50

CPC classification number: H01L23/528 ,  G03F1/144 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5077 ,  G06T2207/30148 ,  H01L23/5226 ,  H01L23/53271 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of optical proximity correction executed by a computer system and integrated circuit layout formed by the same, the step of optical proximity correction comprises: providing an integrated circuit layout with a plurality of parallel line patterns, wherein one side of at least one line pattern is provided with a convex portion; and modifying the integrated circuit layout by forming a concave portion corresponding to the convex portion at the other side of the line pattern.

Abstract translation: 由计算机系统执行的光学邻近校正方法和由其形成的集成电路布局的方法，光学邻近校正步骤包括：提供具有多条平行线图案的集成电路布局，其中至少一条线图案的一侧 设置有凸部; 以及通过在所述线图案的另一侧形成与所述凸部对应的凹部来修改所述集成电路布局。