公开(公告)号：US11189611B2

公开(公告)日：2021-11-30

申请号：US16844986

申请日：2020-04-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/10

Abstract: An ESD protection semiconductor device includes a substrate. A gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins having a first conductivity type are disposed in the substrate respectively at two sides of the gate set. A first doped fin is disposed in the substrate and positioned in between the source fins and spaced apart from the source fins. The first doped fin comprises a second conductivity type that is complementary to the first conductivity type. A second doped fin is formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure. The second doped fin is electrically connected to the first doped fin.

公开(公告)号：US09653450B2

公开(公告)日：2017-05-16

申请号：US14938850

申请日：2015-11-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01L27/0207 ,  H01L27/027 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/7819 ,  H01L29/7831 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.

公开(公告)号：US10204897B2

公开(公告)日：2019-02-12

申请号：US15484143

申请日：2017-04-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.

公开(公告)号：US10103136B2

公开(公告)日：2018-10-16

申请号：US15464362

申请日：2017-03-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L23/62 ,  H01L27/02 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/78

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region. The gate set includes at least a first gate structure, a second gate structure, and a third gate structure.

公开(公告)号：US09673189B2

公开(公告)日：2017-06-06

申请号：US14924975

申请日：2015-10-28

Applicant: United Microelectronics Corp.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/861

Abstract: An electrostatic discharge (ESD) unit is described, including a first device, and a second device coupled to the first device in parallel. In an ESD event, the first device is turned on before the second device is turned on. The second device may be turned on by the turned-on first device to form an ESD path in the ESD event.

公开(公告)号：US10672759B2

公开(公告)日：2020-06-02

申请号：US16124171

申请日：2018-09-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/10

Abstract: An ESD protection semiconductor device is disclosed. The ESD protection semiconductor device includes a substrate and a gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins are formed in the substrate respectively at two sides of the gate set. At least a first doped fin is formed in the substrate at one side of the gate set the same as the source fins. A plurality of isolation structures are formed in one of the drain fins to define at least a second doped fin in the one of the drain fins. The source fins and the drain fins are of a first conductivity type. The first doped fin is of a second conductivity type that is complementary to the first conductivity type. The first doped fin and the second doped fin are electrically connected to each other.

公开(公告)号：US20190006348A1

公开(公告)日：2019-01-03

申请号：US16124171

申请日：2018-09-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10

Abstract: An ESD protection semiconductor device is disclosed. The ESD protection semiconductor device includes a substrate and a gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins are formed in the substrate respectively at two sides of the gate set. At least a first doped fin is formed in the substrate at one side of the gate set the same as the source fins. A plurality of isolation structures are formed in one of the drain fins to define at least a second doped fin in the one of the drain fins. The source fins and the drain fins are of a first conductivity type. The first doped fin is of a second conductivity type that is complementary to the first conductivity type. The first doped fin and the second doped fin are electrically connected to each other.

公开(公告)号：US20200235088A1

公开(公告)日：2020-07-23

申请号：US16844986

申请日：2020-04-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: An ESD protection semiconductor device includes a substrate. A gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins having a first conductivity type are disposed in the substrate respectively at two sides of the gate set. A first doped fin is disposed in the substrate and positioned in between the source fins and spaced apart from the source fins. The first doped fin comprises a second conductivity type that is complementary to the first conductivity type. A second doped fin is formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure. The second doped fin is electrically connected to the first doped fin.

公开(公告)号：US20170221876A1

公开(公告)日：2017-08-03

申请号：US15484143

申请日：2017-04-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/0255 ,  H01L27/0207 ,  H01L27/027 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/7819 ,  H01L29/7831 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.

公开(公告)号：US20170110446A1

公开(公告)日：2017-04-20

申请号：US14938850

申请日：2015-11-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yu Huang ,  Kuan-Cheng Su ,  Tien-Hao Tang ,  Ping-Jui Chen ,  Po-Ya Lai

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0255 ,  H01L27/0207 ,  H01L27/027 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/7819 ,  H01L29/7831 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.