公开(公告)号：US20140224178A1

公开(公告)日：2014-08-14

申请号：US14255016

申请日：2014-04-17

申请人： Veeco Instruments Inc.

发明人： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC分类号： C30B25/12 ,  C30B25/08

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

摘要翻译： 在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。 指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得基底的部分 与轴（14）不同距离的表面每单位面积接收基本相同量的反应气体（4）。 在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US09593434B2

公开(公告)日：2017-03-14

申请号：US14255016

申请日：2014-04-17

申请人： Veeco Instruments Inc.

发明人： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

摘要翻译： 在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。 指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得衬底的部分 与轴（14）不同距离的表面每单位面积接收基本相同量的反应气体（4）。 在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US10364509B2

公开(公告)日：2019-07-30

申请号：US15960785

申请日：2018-04-24

申请人： Veeco Instruments Inc.

发明人： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

公开(公告)号：US20180237943A1

公开(公告)日：2018-08-23

申请号：US15960785

申请日：2018-04-24

申请人： Veeco Instruments Inc.

发明人： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C23C16/458 ,  C23C16/455 ,  C30B25/16 ,  C23C16/52 ,  C30B25/12 ,  C30B25/08

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.