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    Polyacetylenic compounds for protecting against pancreatic islet atrophy
    2.
    发明授权
    Polyacetylenic compounds for protecting against pancreatic islet atrophy 有权
    用于防止胰岛萎缩的聚乙炔化合物

    公开(公告)号：US08536141B2

    公开(公告)日：2013-09-17

    申请号：US13096106

    申请日：2011-04-28

    Applicant: Wen-Chin Yang

    Inventor： Wen-Chin Yang

    IPC: A61K31/7028

    CPC classification number: A61K31/7004 ,  A61K39/395 ,  A61K2300/00

    Abstract: Pharmaceutical compositions and methods for protecting against atrophy of pancreatic islets in a mammal with metabolic syndrome, prediabetes or diabetes are disclosed. The method comprises administering to the mammal a pharmaceutical composition comprising a compound having a chemical structure of formula (I) in an effective amount and a pharmaceutically acceptable carrier: wherein R is H or COCH2COOH; m=3 or 4; n=0 or 1; o=2; and p=1 or 2.

    Abstract translation: 公开了具有代谢综合征，糖尿病前期或糖尿病的哺乳动物中用于防止胰岛萎缩的药物组合物和方法。 该方法包括向哺乳动物施用包含具有式（I）化学结构的化合物和药学上可接受的载体的药物组合物：其中R是H或COCH 2 COOH; m = 3或4; n = 0或1; o = 2; 和p = 1或2。

    Butanol extract of Bidens pilosa
    3.
    发明授权
    Butanol extract of Bidens pilosa 有权
    丁香的丁醇提取物

    公开(公告)号：US08048860B2

    公开(公告)日：2011-11-01

    申请号：US12263896

    申请日：2008-11-03

    Applicant: Wen-Chin Yang ,  Shu-Lin Chang ,  Lee-Tian Chang ,  Yi-Ming Chiang ,  Lie-Fen Shyur

    Inventor： Wen-Chin Yang ,  Shu-Lin Chang ,  Lee-Tian Chang ,  Yi-Ming Chiang ,  Lie-Fen Shyur

    IPC: A61K31/7032 ,  C07G3/00 ,  C07H15/10

    CPC classification number: A61K36/28 ,  C07H15/10

    Abstract: A method of treating a Th1-mediated disorder includes administering to a subject in need of the treatment an effective amount of a compound of the formula I: wherein R1 is H, alkyl, aryl, or cyclyl; R2 is pyranose; R3 is H or alkyl; m is 2, 3, 4, 5, or 6; n is 0, 1, 2, or 3; o is 0, 1, 2, 3, 4; p is 1, 2, 3, or 4; and the Th1-mediated disorder is non-obese diabetes, Crohn's colitis, autoimmune hemolytic anemia, rheumatoid arthritis, autoimmune encephalitis, multiple sclerosis, or autoimmune myocarditis. Also disclosed is a pharmaceutical composition including a compound of formula I above and a pharmaceutically acceptable carrier.

    Abstract translation: 治疗Th1介导的病症的方法包括向需要治疗的受试者施用有效量的式I化合物：其中R 1是H，烷基，芳基或环基; R2是吡喃糖; R3是H或烷基; m为2,3,4,5或6; n为0,1,2或3; o是0，1，2，3，4; p是1,2,3或4; 并且Th1介导的病症是非肥胖性糖尿病，克罗恩病的结肠炎，自身免疫性溶血性贫血，类风湿性关节炎，自身免疫性脑炎，多发性硬化或自身免疫性心肌炎。 还公开了包含上述式I化合物和药学上可接受的载体的药物组合物。

    Balance Step-Height Selective Bi-Channel Structure on HKMG Devices
    5.
    发明申请
    Balance Step-Height Selective Bi-Channel Structure on HKMG Devices 有权
    HKMG设备平衡步高选择双通道结构

    公开(公告)号：US20110278646A1

    公开(公告)日：2011-11-17

    申请号：US13194332

    申请日：2011-07-29

    Applicant: Jin-Aun Ng ,  Wen-Chin Yang ,  Chien-Liang Chen ,  Chung-Hau Fei ,  Maxi Chang ,  Bao-Ru Young ,  Harry Chuang

    Inventor： Jin-Aun Ng ,  Wen-Chin Yang ,  Chien-Liang Chen ,  Chung-Hau Fei ,  Maxi Chang ,  Bao-Ru Young ,  Harry Chuang

    IPC: H01L27/092

    CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    Abstract: The present disclosure provides a method including forming STI features in a silicon substrate, defining a first and a second active regions for a PFET and an NFET, respectively; forming a hard mask having an opening to expose the silicon substrate within the first active region; etching the silicon substrate through the opening to form a recess within the first active region; growing a SiGe layer in the recess such that a top surface of the SiGe layer within the first active region and a top surface of the silicon substrate within the second active region are substantially coplanar; forming metal gate material layers; patterning the metal gate material layers to form a metal gate stack on the SiGe layer within the first active region; and forming an eSiGe S/D stressor distributed in both the SiGe layer and the silicon substrate within the first active region.

    Abstract translation: 本公开提供了一种方法，包括在硅衬底中形成STI特征，分别为PFET和NFET限定第一和第二有源区; 形成具有开口的硬掩模，以在所述第一有源区域内暴露所述硅衬底; 通过所述开口蚀刻所述硅衬底以在所述第一有源区内形成凹陷; 在凹部中生长SiGe层，使得第一有源区内的SiGe层的顶表面和第二有源区内的硅衬底的顶表面基本上是共面的; 形成金属栅材料层; 图案化金属栅极材料层以在第一有源区内的SiGe层上形成金属栅叠层; 以及在第一有源区内形成分布在SiGe层和硅衬底中的eSiGe S / D应力器。

    IMMUNOMODULATORY COMPOSITIONS
    6.
    发明申请
    IMMUNOMODULATORY COMPOSITIONS 审中-公开
    免疫组织化学

    公开(公告)号：US20100310587A1

    公开(公告)日：2010-12-09

    申请号：US12754690

    申请日：2010-04-06

    Applicant: Wen-Chin Yang

    Inventor： Wen-Chin Yang

    IPC: A61K39/00 ,  C12N5/0783 ,  A61P37/04

    CPC classification number: A61K36/28

    Abstract: Methods useful, for example, in identifying plant compositions that have immunomodulatory activity. Also disclosed is an Asteraceae plant immunomodulatory composition useful for increasing an immune response, e.g., IFN γ or IL-2 transcription.

    Abstract translation: 方法可用于例如鉴定具有免疫调节活性的植物组合物。 还公开了可用于增加免疫应答例如IFNγ或IL-2转录的菊科植物免疫调节组合物。

    Polyacetylenic compounds
    7.
    发明授权
    Polyacetylenic compounds 有权
    聚乙炔化合物

    公开(公告)号：US07763285B2

    公开(公告)日：2010-07-27

    申请号：US11674105

    申请日：2007-02-12

    Applicant: Wen-Chin Yang ,  Lee-Tian Chang

    Inventor： Wen-Chin Yang ,  Lee-Tian Chang

    IPC: A61K36/00 ,  A61K31/70 ,  C07H1/00

    CPC classification number: A61K36/28 ,  A61K31/7034 ,  Y10S514/866

    Abstract: A method of treating type II diabetes with a polyacetylenic compound of the following formula: in which R1 is H, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20 cycloalkyl, C3-C20 cycloalkenyl, C1-C20 heterocycloalkyl, C1-C20 heterocycloalkenyl, aryl, or heteroaryl; R2 is H or a monosaccharide residue; R3 is H or C1-C10alkyl; m is 2, 3, or 4; n is 0, 1, 2, or 3; o is 0, 1, 2, 3, or 4; and p is 1, 2, 3, or 4.

    Abstract translation: 一种用下式的聚乙炔化合物治疗II型糖尿病的方法：其中R1是H，C1-C10烷基，C2-C10链烯基，C2-C10炔基，C3-C20环烷基，C3-C20环烯基，C1-C20 杂环烷基，C 1 -C 20杂环烯基，芳基或杂芳基; R2是H或单糖残基; R3是H或C1-C10烷基; m为2,3或4; n为0,1,2或3; o为0,1,2,3或4; 而p为1,2,3或4。

    Antibacterial treatment and composition
    8.
    发明授权
    Antibacterial treatment and composition 有权
    抗菌处理及组成

    公开(公告)号：US07341752B2

    公开(公告)日：2008-03-11

    申请号：US11215765

    申请日：2005-08-30

    Applicant: Wen-Chin Yang ,  Shu-Lin Chang

    Inventor： Wen-Chin Yang ,  Shu-Lin Chang

    IPC: A61K36/00 ,  A61K36/11 ,  A01N43/04

    CPC classification number: A61K36/28 ,  A61K31/7048 ,  Y02A50/478 ,  A61K2300/00

    Abstract: A method for treating a bacterial infection in a subject by administration of an effective amount of centaurein alone or in combination with a bacteriocide. Also described is a composition containing an effective combined amount of centaurein and a bacteriocide useful for treating a bacterial infection in a subject.

    Abstract translation: 通过单独施用有效量的百吗百醇或与杀细菌剂组合来治疗受试者的细菌感染的方法。 还描述了含有有效组合量的百里灵素和可用于治疗受试者细菌感染的杀菌剂的组合物。

    Semiconductor device having a SiGe feature and a metal gate stack
    10.
    发明授权
    Semiconductor device having a SiGe feature and a metal gate stack 有权
    具有SiGe特征的半导体器件和金属栅极堆叠

    公开(公告)号：US08373199B2

    公开(公告)日：2013-02-12

    申请号：US13194332

    申请日：2011-07-29

    Applicant: Jin-Aun Ng ,  Wen-Chin Yang ,  Chien-Liang Chen ,  Chung-Hua Fei ,  Maxi Chang ,  Bao-Ru Young ,  Harry Chuang

    Inventor： Jin-Aun Ng ,  Wen-Chin Yang ,  Chien-Liang Chen ,  Chung-Hua Fei ,  Maxi Chang ,  Bao-Ru Young ,  Harry Chuang

    IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    Abstract: The present disclosure provides a method including forming STI features in a silicon substrate, defining a first and a second active regions for a PFET and an NFET, respectively; forming a hard mask having an opening to expose the silicon substrate within the first active region; etching the silicon substrate through the opening to form a recess within the first active region; growing a SiGe layer in the recess such that a top surface of the SiGe layer within the first active region and a top surface of the silicon substrate within the second active region are substantially coplanar; forming metal gate material layers; patterning the metal gate material layers to form a metal gate stack on the SiGe layer within the first active region; and forming an eSiGe S/D stressor distributed in both the SiGe layer and the silicon substrate within the first active region.

    Abstract translation: 本公开提供了一种方法，包括在硅衬底中形成STI特征，分别为PFET和NFET限定第一和第二有源区; 形成具有开口的硬掩模，以在所述第一有源区域内暴露所述硅衬底; 通过所述开口蚀刻所述硅衬底以在所述第一有源区内形成凹陷; 在凹部中生长SiGe层，使得第一有源区内的SiGe层的顶表面和第二有源区内的硅衬底的顶表面基本上是共面的; 形成金属栅材料层; 图案化金属栅极材料层以在第一有源区内的SiGe层上形成金属栅叠层; 以及在第一有源区内形成分布在SiGe层和硅衬底中的eSiGe S / D应力器。

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