公开(公告)号：US11114380B2

公开(公告)日：2021-09-07

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11854972B2

公开(公告)日：2023-12-26

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  G03F7/00 ,  H01L21/762 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L23/5283 ,  G03F7/7015 ,  H01L21/76224 ,  H01L23/5226 ,  H01L28/60 ,  H10B12/053 ,  H10B12/31 ,  H10B12/34 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US20210082813A1

公开(公告)日：2021-03-18

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  H01L21/762 ,  H01L49/02 ,  G03F7/20

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11798185B2

公开(公告)日：2023-10-24

申请号：US17209741

申请日：2021-03-23

Applicant: Winbond Electronics Corp.

Inventor： Tung-Yu Wu ,  Chun-Yen Liao ,  Chun-Sheng Wu ,  Kao-Tsair Tsai ,  Chao-Yi Huang

IPC: G06T7/60 ,  G06T7/11 ,  G06T5/00 ,  G06T7/73 ,  G06N3/04 ,  G06N3/08

CPC classification number: G06T7/60 ,  G06N3/04 ,  G06N3/08 ,  G06T5/002 ,  G06T7/11 ,  G06T7/73 ,  G06T2207/10061 ,  G06T2207/20021 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: An image analysis method is provided. In the image analysis method, a to-be analyzed image is inputted into a region-based convolutional neural network (RCNN) model to obtain a masked image outputted from the RCNN. The center of a masked object in the masked image is calculated. The center is regarded as an origin of coordinate and the farthest coordinate point from the origin of coordinate in each of the four quadrants relative to the origin of coordinate are searched. The image analysis block is generated for each of the farthest coordinate points. The post-processing is performed on the image analysis blocks to obtain an object range.

公开(公告)号：US20230325641A1

公开(公告)日：2023-10-12

申请号：US17715947

申请日：2022-04-07

Applicant: Winbond Electronics Corp.

Inventor： Tung-Yu Wu ,  Chun-Yen Liao ,  Tsung-Wei Lin ,  Chun-Sheng Wu ,  Chao-Yi Huang ,  Yu Ming Li ,  Hung-Fei Kuo

IPC: G06N3/04 ,  G03F7/20

CPC classification number: G06N3/0472 ,  G03F7/70491

Abstract: The invention provides a light source optimization apparatus including a storage apparatus and a processor. The storage apparatus stores a plurality of modules. The processor is coupled to the storage apparatus and configured to execute the plurality of modules. The plurality of modules include a critical pattern module and a light source optimization module. The critical pattern module retrieves critical pattern data. The light source optimization module executes an ant colony optimization (ACO) algorithm according to a preset parameter to adjust an initial light source image to generate an output light source image, and the initial light source image corresponds to the critical pattern data.

公开(公告)号：US20210351131A1

公开(公告)日：2021-11-11

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.