公开(公告)号：US20240395966A1

公开(公告)日：2024-11-28

申请号：US18322861

申请日：2023-05-24

Applicant: Wisconsin Alumni Research Foundation

Inventor： Guangying Wang ,  Shubhra Pasayat ,  Chirag Gupta

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/343

Abstract: Group III-nitride-based light-emitting devices are provided. The light-emitting devices are characterized by an active region having one or more quantum wells. The one or more quantum wells having a double well design provided by a first well layer comprising an AlInGaN alloy or an InGaN alloy and an adjacent GaN interlayer, both of which are disposed between two barrier layers comprising an AlGaN alloy or a low-In-content AlInGaN alloy.

公开(公告)号：US20240120825A1

公开(公告)日：2024-04-11

申请号：US18371248

申请日：2023-09-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chirag Gupta ,  Shubhra S. Pasayat ,  Daniel Ludois

IPC: H02M1/08 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778 ,  H02M5/293

CPC classification number: H02M1/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/7786 ,  H02M5/2932

Abstract: A drive system suitable for motors and the like employs bidirectional FETs with active gate current sourcing and sinking to eliminate series diode losses. In one embodiment, the bidirectional FETs have floating field plates that can be dynamically biased according to device polarity.

公开(公告)号：US20250109524A1

公开(公告)日：2025-04-03

申请号：US18477737

申请日：2023-09-29

Applicant: Wisconsin Alumni Research Foundation

Inventor： Shubhra S. Pasayat ,  Chirag Gupta ,  Swarnav Mukhopadhyay ,  Cheng Liu

IPC: C30B25/16 ,  C30B25/18 ,  C30B29/40

Abstract: Methods for growing semi-insulating, carbon-doped (C-doped) group III-nitride on a substrate via metal-organic chemical vapor deposition (MOCVD) are provided. In the methods, the controlled timing of the introduction of carbon dopant precursors in the MOCVD growth process results in semi-insulating group III-nitride having a high crystal quality and surface morphologies. Some embodiments of the methods use a carbon dopant precursor pre-flow step in which a carbon dopant precursor is introduced into the MOCVD reactor chamber prior to the introduction of any group III precursors and the onset of film formation (“Pre-Flow”). In other embodiments of the methods, the introduction of carbon dopant precursors is delayed until after the onset of group III-nitride film coalescence (“Delayed-Doping”).

公开(公告)号：US20240363745A1

公开(公告)日：2024-10-31

申请号：US18308386

申请日：2023-04-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chirag Gupta ,  Swarnav Mukhopadhyay ,  Shubhra Shweta Pasayat ,  Jiahao Chen

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/7786 ,  H01L29/0607 ,  H01L29/2003

Abstract: Group III-nitride based high electron mobility transistors (HEMTs) are provided. The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that provides the HEMTs with a very low channel sheet resistance and enables high-power, high-frequency operation. A thick barrier layer increases the distance between the two-dimensional electron gas (2DEG) channel and traps at the exposed surface of the group III-nitride barrier layer, thereby reducing or eliminating current collapse. The recessed gate provides a reduced barrier layer thickness below the gate, reducing the distance between the gate and allowing for good modulation of the 2DEG by the gate.

公开(公告)号：US20240171169A1

公开(公告)日：2024-05-23

申请号：US18058453

申请日：2022-11-23

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chirag Gupta ,  Shubhra S. Pasayat

IPC: H03K17/0412 ,  H03K17/687

CPC classification number: H03K17/04123 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K17/693

Abstract: A bidirectional FET switch combining gate elements greatly reduces chip area and cost through the use of a dielectric layer with a high dielectric constant of a complex oxide moderating peak electrical gradients when used with or without field plates.