公开(公告)号：US10566521B2

公开(公告)日：2020-02-18

申请号：US16019831

申请日：2018-06-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Trevor Jeffrey Anderson

IPC: G11C11/00 ,  H01L43/04 ,  H01L43/10 ,  G11C11/16 ,  G11C11/18 ,  H01L43/14 ,  H01L43/08

Abstract: Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect. Spin-orbit torque can be generated by the devices with a high efficiency, even at or near room temperature.

公开(公告)号：US20190006581A1

公开(公告)日：2019-01-03

申请号：US16019831

申请日：2018-06-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Tianxiang Nan ,  Trevor Jeffrey Anderson

IPC: H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/165 ,  G11C11/18 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect.