公开(公告)号：US20130026946A1

公开(公告)日：2013-01-31

申请号：US13567622

申请日：2012-08-06

申请人： Yasuhiro MARUYAMA ,  Hiroyuki SHOJI ,  Mitsuru MARIYAMA ,  Masakazu IKEDA ,  Hirohisa WARITA ,  Katsumi INABA ,  Naoki FUKUNAGA

发明人： Yasuhiro MARUYAMA ,  Hiroyuki SHOJI ,  Mitsuru MARIYAMA ,  Masakazu IKEDA ,  Hirohisa WARITA ,  Katsumi INABA ,  Naoki FUKUNAGA

IPC分类号： H05B37/02

CPC分类号： H05B33/0815 ,  H05B33/0803 ,  H05B33/0824

摘要： An LED drive circuit is an LED dive circuit that receives an alternating voltage to drive an LED, and includes a current remove portion that removes a current from a current supply line that supplies an LED drive current to the LED. If an input current to the LED drive circuit is an unnecessary current, the LED does not light because of current removal by the current remove portion. If the input current to the LED drive circuit turns into the LED drive current from the unnecessary current, the current remove portion decreases the amount of current removed.

摘要翻译： LED驱动电路是接收交流电压以驱动LED的LED潜水电路，并且包括电流去除部分，该电流去除部分从电流供应线路去除LED驱动电流到LED的电流。 如果到LED驱动电路的输入电流是不需要的电流，则由于电流去除部分的电流去除，LED不亮。 如果LED驱动电路的输入电流从不需要的电流变成LED驱动电流，则电流去除部分减少去除的电流量。

公开(公告)号：US20110220872A1

公开(公告)日：2011-09-15

申请号：US13114113

申请日：2011-05-24

申请人： Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/06

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.

摘要翻译： 一种化合物半导体发光器件，包括由化合物半导体制成的n型半导体层，发光层和p型半导体层，形成在衬底上，n型半导体层和 堆叠p型半导体层以便在其间插入发光层，第一导电透明电极和第二导电电极。 第一导电透明电极由含有二氧化硅结构的In 2 O 3晶体的IZO膜制成。 还讨论了制造该装置的方法。

公开(公告)号：US20120228665A1

公开(公告)日：2012-09-13

申请号：US13480373

申请日：2012-05-24

申请人： Naoki FUKUNAGA ,  Hiroshi OSAWA

发明人： Naoki FUKUNAGA ,  Hiroshi OSAWA

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： C23C14/5813 ,  C23C14/086 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

摘要： Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film (15) including a dopant is laminated on a p-type semiconductor layer (14) of a gallium nitride-based compound semiconductor device (1). The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film (15).

摘要翻译： 提供一种制造具有低驱动电压（VI）和高的光输出耦合效率的氮化镓基化合物半导体发光器件的方法，氮化镓基化合物半导体发光器件和灯。 在制造氮化镓系化合物半导体发光元件的方法中，将含有掺杂剂的透明导电氧化物膜（15）层压在氮化镓系化合物半导体器件（p-type semiconductor semiconductor device）的p型半导体层（14）上 1）。 透明导电氧化物膜15在透明导电氧化物膜（15）层压之后，使用激光进行激光退火处理。

公开(公告)号：US20100052007A1

公开(公告)日：2010-03-04

申请号：US12199723

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。

公开(公告)号：US20100051981A1

公开(公告)日：2010-03-04

申请号：US12199767

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

摘要翻译： 提供了具有优异的光提取效率和低波长不均匀性的半导体发光器件，其制造方法和灯。 半导体发光器件包括依次层叠的n型半导体层12，发光层13，p型半导体层14和氧化钛系导电膜层15， 凸面15形成在氧化钛系导电膜层的表面的至少一部分上。

公开(公告)号：US20090008672A1

公开(公告)日：2009-01-08

申请号：US12199746

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

摘要： There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, an emission wavelength is within a range of 300 to 550 nm, and a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film.

摘要翻译： 提供了具有高可靠性和优异的光提取效率的发光装置，其制造方法和灯。 发光装置包括透明电极，其中氧化钛系导电膜用于至少一层所述透明电极，发射波长在300〜550nm的范围内，光催化反应防止层 形成为覆盖所述氧化钛类导电膜。

公开(公告)号：US20090001407A1

公开(公告)日：2009-01-01

申请号：US12199764

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes: an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15, and a translucent film layer 16 laminated in this order, and a concavo-convex surface is formed on at least a part of the surface of the titanium oxide-based conductive film layer 15.

摘要翻译： 提供了一种具有优异的光提取效率的半导体发光器件，其制造方法和灯。 半导体发光器件1包括：n型半导体层12，发光层13，p型半导体层14，氧化钛系导电膜层15和层叠在其中的半透明膜层16 在氧化钛系导电膜层15的表面的至少一部分上形成有凹凸表面。