公开(公告)号：US06409587B1

公开(公告)日：2002-06-25

申请号：US09713827

申请日：2000-11-15

申请人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

发明人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

IPC分类号： B24D1100

CPC分类号： B24D11/08 ,  B24B21/04 ,  B24B37/24 ,  G06T9/007

摘要： A composite, dual-hardness polishing pad for use in a linear chemical mechanical polishing apparatus and a method for forming the pad are described. In the composite, dual-hardness polishing pad, a pad body is first provided which has a leading edge and a trailing edge for mounting to a linear belt immediately adjacent to a second polishing pad. The pad body is fabricated of a material that has a first hardness, the leading edge contacts an object being polished on the composite polishing pad before the trailing edge when the linear belt turns in a linear polishing process. The composite polishing pad further includes a buffer pad that is adhesively joined to the leading edge of the pad body for contacting the object that is being polished, the buffer pad may be fabricated of a material that has a second hardness which is at least 20% smaller than the first hardness such that impact on the object being polished is minimized during a linear polishing process. The present invention is further directed to a method for adhesively joining a buffer pad to a pad body of a polishing pad.

摘要翻译： 描述了用于线性化学机械抛光装置的复合双硬度抛光垫和用于形成垫的方法。 在复合材料双硬度抛光垫中，首先提供具有前缘和后缘的垫体，用于安装在紧邻第二抛光垫的线性带上。 垫体由具有第一硬度的材料制成，当线性带在线性抛光过程中转动时，前缘在后缘之前在复合抛光垫上接触待抛光的物体。 所述复合抛光垫还包括缓冲垫，所述缓冲垫粘合地连接到所述垫体的前缘以接触被抛光的物体，所述缓冲垫可以由具有至少20％的第二硬度的材料制成， 小于第一硬度，使得在线性抛光工艺期间对被抛光物体的冲击最小化。 本发明还涉及一种用于将缓冲垫粘合地结合到抛光垫的衬垫体的方法。

公开(公告)号：US06634930B1

公开(公告)日：2003-10-21

申请号：US09635013

申请日：2000-08-09

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.

摘要翻译： 本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。 在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它 金属层，通过浆料溶液。 只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

公开(公告)号：US06736701B1

公开(公告)日：2004-05-18

申请号：US09989838

申请日：2001-11-20

申请人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

发明人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/042 ,  B24B21/04

摘要： A new method is provided for the post-deposition treatment of copper lines. A damascene copper line pattern whereby a TaN barrier layer and a seed layer have been provided is polished. Under the first embodiment of the invention, the deposited copper is polished (Cu CMP), the surface of the wafer is rinsed using a first High Flow DI rinse that contains a TBA inhibitor. The TaN CMP is performed immediately following the first High Flow DI rinse. A second High Flow DI rinse is applied using DI water that contains TBA inhibitor. The required following rinse step is executed immediately after the second High Flow DI rinse has been completed. Under the second embodiment of the invention, the process of CMP has been divided in two distinct steps where the first step is aimed at corrosion elimination and the second step is aimed at elimination of mechanical damage to the polished copper. The processing conditions for the second processing step have been extended and optimized, thereby using a second belt of a CMP apparatus.

摘要翻译： 提供了一种新的铜线后处理方法。 抛光已经提供TaN阻挡层和种子层的镶嵌铜线图案。 在本发明的第一实施例中，抛光沉积的铜（Cu CMP），使用含有TBA抑制剂的第一高流量DI冲洗冲洗晶片的表面。 在第一次高流量DI冲洗之后立即执行TaN CMP。 使用含有TBA抑制剂的去离子水进行第二次高流量DI冲洗。 第二次高流量DI冲洗完成后立即执行所需的冲洗步骤。 在本发明的第二个实施方案中，CMP的方法分为两个不同的步骤，其中第一步骤旨在消除腐蚀，第二步骤旨在消除抛光铜的机械损伤。 第二处理步骤的处理条件已被扩展和优化，从而使用CMP设备的第二带。

公开(公告)号：US06635211B2

公开(公告)日：2003-10-21

申请号：US09888789

申请日：2001-06-25

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： B29C3912

CPC分类号： B29C39/025 ,  B24B37/042 ,  B29C70/64 ,  B29C2793/009 ,  B29K2105/126 ,  B29K2105/128 ,  B29K2105/16 ,  B29L2031/709 ,  B29L2031/736

摘要： A continuous loop polishing pad that is reinforced by a reinforcing filler and a method for fabricating the polishing pad are described. The reinforced polishing pad is constructed by a sub-layer and a top layer, wherein the sub-layer defines an inner diameter of the polishing pad and contains a reinforcing filler with an aspect ratio of at least 10 oriented substantially in a circumferential direction of the continuous loop polishing pad. The top layer is laminated to the sub-layer with a top surface defining an outer diameter of the polishing pad, while both the sub-layer and the top layer are formed of a polymeric material. The invention further describes a method for fabricating the reinforced polishing pad in a continuous loop.

公开(公告)号：US06383930B1

公开(公告)日：2002-05-07

申请号：US09902896

申请日：2001-07-12

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01K2144

CPC分类号： H01L21/76885 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new method is provided that affects the polishing rate of the surface of a layer of copper, that has been deposited over the surface of a layer of dielectric. Copper damascene structures have been created in the surface of the layer of dielectric, the layer of dielectric also overlies an alignment mark. The surface of the layer of dielectric that is aligned with the alignment mark is provided with dummy damascene structures, assuring equal polishing rates for active damascene structures and the surface region of the layer of dielectric overlying an alignment mark.

摘要翻译： 提供了一种新的方法，其影响已经沉积在电介质层的表面上的铜层的表面的抛光速率。 在电介质层的表面已经形成铜镶嵌结构，电介质层也覆盖对准标记。 与对准标记对准的电介质层的表面设置有虚拟镶嵌结构，确保活性镶嵌结构的相同抛光速率和覆盖对准标记的电介质层的表面区域。

公开(公告)号：US06544891B1

公开(公告)日：2003-04-08

申请号：US09945435

申请日：2001-09-04

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01L2144

CPC分类号： H01L21/7684 ,  H01L21/76838

摘要： A method of copper metallization wherein copper flaking and metal bridging problems are eliminated by an annealing process is described. A first metal line is provided on an insulating layer overlying a semiconductor substrate. A dielectric stop layer is deposited overlying the first metal line. A dielectric layer is deposited overlying the dielectric stop layer. An opening is etched through the dielectric layer and the dielectric stop layer to the first metal line. A barrier metal layer is deposited over the surface of the dielectric layer and within the opening. A copper layer is deposited over the surface of the barrier metal layer. The copper layer and barrier metal layer not within the opening are polished away wherein after a time period, copper flakes form on the surface of the copper and dielectric layers. The copper layer and the dielectric layer are alloyed whereby the copper layer is stabilized and the copper flakes are removed to complete copper damascene metallization in the fabrication of an integrated circuit.

摘要翻译： 描述了通过退火工艺消除铜剥落和金属桥接问题的铜金属化方法。 第一金属线设置在覆盖在半导体衬底上的绝缘层上。 沉积在第一金属线上的电介质停止层。 介电层沉积在介电阻挡层上。 通过介电层和电介质停止层蚀刻开口到第一金属线。 阻挡金属层沉积在电介质层的表面上并且在开口内。 在阻挡金属层的表面上沉积铜层。 不在开口内的铜层和阻挡金属层被抛光，其中在一段时间之后，在铜和电介质层的表面上形成铜片。 将铜层和电介质层合金化，由此铜层稳定，并且在制造集成电路中去除铜片以完成铜镶嵌金属化。

公开(公告)号：US06398627B1

公开(公告)日：2002-06-04

申请号：US09815427

申请日：2001-03-22

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： B24B900

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A slurry dispensing unit for a chemical mechanical polishing apparatus equipped with multiple slurry dispensing nozzles is disclosed. The slurry dispensing unit is constructed by a dispenser body that has a delivery conduit, a return conduit and a U-shape conduit connected in fluid communication therein between for flowing continuously a slurry solution therethrough and a plurality of nozzles integrally connected to and in fluid communication with a fluid passageway in the delivery conduit for dispensing a slurry solution. The multiple slurry dispensing nozzles may either have a fixed opening or adjustable openings by utilizing a flow control valve at each nozzle opening.

摘要翻译： 公开了一种用于配备有多个浆料分配喷嘴的化学机械抛光设备的浆料分配单元。 浆料分配单元由分配器主体构成，分配器主体具有输送管道，回流管道和连接在其中的流体连通的U形管道，用于连续地流动通过其中的浆液;以及多个喷嘴，其一体地连接到流体连通 在输送管道中具有用于分配浆液的流体通道。 多个浆料分配喷嘴可以通过在每个喷嘴开口处利用流量控制阀来具有固定的开口或可调节的开口。

公开(公告)号：US06358119B1

公开(公告)日：2002-03-19

申请号：US09336808

申请日：1999-06-21

申请人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US06620034B2

公开(公告)日：2003-09-16

申请号：US10043780

申请日：2002-01-14

申请人： Tsu Shih ,  Jih-Churng Jwu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Jwu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US06620725B1

公开(公告)日：2003-09-16

申请号：US09395287

申请日：1999-09-13

申请人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

发明人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.

摘要翻译： 描述用于在两个步骤中执行CMP的过程。 在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。 然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。 在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。 如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。 然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。 这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。