公开(公告)号：US06620725B1

公开(公告)日：2003-09-16

申请号：US09395287

申请日：1999-09-13

申请人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

发明人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.

摘要翻译： 描述用于在两个步骤中执行CMP的过程。 在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。 然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。 在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。 如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。 然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。 这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。

公开(公告)号：US06358119B1

公开(公告)日：2002-03-19

申请号：US09336808

申请日：1999-06-21

申请人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US06589872B1

公开(公告)日：2003-07-08

申请号：US09304302

申请日：1999-05-03

申请人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01K2120

CPC分类号： B24B37/042 ,  B24B49/00 ,  B24B57/02

摘要： The invention teaches a new method of applying slurry during the process of chemical mechanical polishing of copper surfaces. By varying the rate of slurry deposition, starting out with a low rate of slurry flow that is increased as the polishing process proceeds, the invention obtains good planarity for copper surfaces while saving on the amount of slurry that is being used for the copper surface polishing process.

摘要翻译： 本发明教导了在铜表面的化学机械抛光过程中施加浆料的新方法。 通过改变浆料沉积速率，随着抛光工艺的进行，随着浆料流动速度的降低而开始，本发明对于铜表面获得了良好的平面性，同时节省了用于铜表面抛光的浆料量 处理。

公开(公告)号：US06429118B1

公开(公告)日：2002-08-06

申请号：US09664414

申请日：2000-09-18

申请人： Ying-Ho Chen ,  Syun-Ming Jang ,  Jih-Churng Twu ,  Tsu Shih

发明人： Ying-Ho Chen ,  Syun-Ming Jang ,  Jih-Churng Twu ,  Tsu Shih

IPC分类号： H01L213213

CPC分类号： H01L21/76802 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

摘要： An improved and new process, used for the elimination of copper line damage in damacene processing, is disclosed. By depositing copper by physical vapor deposition (PVD), sputtering, preferably by an ion metal plasma (IMP) scheme or chemical vapor deposition (CVD), the deposited copper fills pinholes or intra-cracks (micro-cracks), caused by poor gap filling of purely electrochemical deposition of copper plating. By this process or method, chemical attack on copper lines, by chemicals in the subsequent chemical mechanical polish (CMP) back and post-cleaning steps, is prevented.

摘要翻译： 公开了一种改进和新的方法，用于消除碲化氢处理中的铜线损伤。 通过物理气相沉积（PVD），优选通过离子金属等离子体（IMP）方案或化学气相沉积（CVD）沉积铜，沉积的铜填充由差的间隙引起的针孔或裂纹（微裂纹） 填充电镀纯电化学沉积。 通过该方法或方法，可以防止化学品在后续的化学机械抛光（CMP）背面和后清洗步骤中对铜线进行化学侵蚀。

公开(公告)号：US6080656A

公开(公告)日：2000-06-27

申请号：US387436

申请日：1999-09-01

申请人： Tsu Shih ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Syun-Ming Jang

发明人： Tsu Shih ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Syun-Ming Jang

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L21/76879

摘要： A method for forming a copper structure with reduced dishing, using a self-aligned copper electroplating process. The process begins by providing a semiconductor structure having a dielectric layer thereover, wherein the dielectric layer has a trench therein. A barrier layer is formed over the dielectric layer, a seed layer is formed on the barrier layer, and an insulating layer is formed on the seed layer. The insulating layer is patterned so as to expose the seed layer on the bottom and sidewalls of the trench, preferably using the trench photo mask. A copper layer is selectively electroplated onto the exposed seed layer on the bottom and sidewalls of the trench, while the insulating layer prevents copper deposition outside of the trench. The copper layer, the insulating layer, and the seed layer are planarized, stopping at the dielectric layer. Because of the self-aligned copper geometry, the copper suffers reduced dishing.

摘要翻译： 一种使用自对准铜电镀工艺形成具有减少凹陷的铜结构的方法。 该过程开始于提供其上具有介电层的半导体结构，其中介电层在其中具有沟槽。 在电介质层上形成阻挡层，在阻挡层上形成种子层，在籽晶层上形成绝缘层。 图案化绝缘层，以便优选地使用沟槽光掩模来暴露沟槽的底部和侧壁上的晶种层。 选择性地将铜层电镀到沟槽的底部和侧壁上的暴露种子层上，同时绝缘层防止在该沟槽外部的铜沉积。 铜层，绝缘层和种子层被平坦化，停留在电介质层。 由于自对准的铜几何形状，铜损坏了凹陷。

公开(公告)号：US06417106B1

公开(公告)日：2002-07-09

申请号：US09431150

申请日：1999-11-01

申请人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01L21302

CPC分类号： H01L21/7684 ,  H01L21/76829

摘要： A process for reducing dishing in damascene structures formed in low k organic dielectrics is described. A key feature is the insertion of a liner layer between the low k dielectric layer and the etch stop layer. The only requirement for the liner material is that it should have different etching characteristics from the etch stop material so that when trenches are etched in the dielectric they extend as far as the etch stop layer, in the normal way. When this is done it is found that dishing, after CMP, is significantly reduced, particularly for trench structures made up of multiple narrow trenches spaced close together.

摘要翻译： 描述了一种用于减少在低k有机电介质中形成的镶嵌结构中的凹陷的方法。 一个关键特征是在低k电介质层和蚀刻停止层之间插入衬里层。 衬垫材料的唯一要求是它应该具有与蚀刻停止材料不同的蚀刻特性，使得当在电介质中蚀刻沟槽时，它们以正常方式延伸到蚀刻停止层的最远处。 当这样做时，发现在CMP之后的凹陷显着减少，特别是对于由几个间隔得很近的窄沟槽组成的沟槽结构。

公开(公告)号：US06736701B1

公开(公告)日：2004-05-18

申请号：US09989838

申请日：2001-11-20

申请人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

发明人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/042 ,  B24B21/04

摘要： A new method is provided for the post-deposition treatment of copper lines. A damascene copper line pattern whereby a TaN barrier layer and a seed layer have been provided is polished. Under the first embodiment of the invention, the deposited copper is polished (Cu CMP), the surface of the wafer is rinsed using a first High Flow DI rinse that contains a TBA inhibitor. The TaN CMP is performed immediately following the first High Flow DI rinse. A second High Flow DI rinse is applied using DI water that contains TBA inhibitor. The required following rinse step is executed immediately after the second High Flow DI rinse has been completed. Under the second embodiment of the invention, the process of CMP has been divided in two distinct steps where the first step is aimed at corrosion elimination and the second step is aimed at elimination of mechanical damage to the polished copper. The processing conditions for the second processing step have been extended and optimized, thereby using a second belt of a CMP apparatus.

摘要翻译： 提供了一种新的铜线后处理方法。 抛光已经提供TaN阻挡层和种子层的镶嵌铜线图案。 在本发明的第一实施例中，抛光沉积的铜（Cu CMP），使用含有TBA抑制剂的第一高流量DI冲洗冲洗晶片的表面。 在第一次高流量DI冲洗之后立即执行TaN CMP。 使用含有TBA抑制剂的去离子水进行第二次高流量DI冲洗。 第二次高流量DI冲洗完成后立即执行所需的冲洗步骤。 在本发明的第二个实施方案中，CMP的方法分为两个不同的步骤，其中第一步骤旨在消除腐蚀，第二步骤旨在消除抛光铜的机械损伤。 第二处理步骤的处理条件已被扩展和优化，从而使用CMP设备的第二带。

公开(公告)号：US06376377B1

公开(公告)日：2002-04-23

申请号：US09541487

申请日：2000-04-03

申请人： Weng Chang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Syun-Ming Jang

发明人： Weng Chang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Syun-Ming Jang

IPC分类号： H01L21302

CPC分类号： H01L21/76826 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76888

摘要： Within a method for removing from over a substrate a chemical mechanical polish (CMP) residue layer there is first provided a substrate. There is then formed over the substrate: (1) a chemical mechanical polish (CMP) substrate layer having an aperture formed therein; (2) a chemical mechanical polish (CMP) planarized patterned layer formed within the aperture within the chemical mechanical polish (CMP) substrate layer; and (3) a chemical mechanical polish (CMP) residue layer formed upon at least one of the chemical mechanical polish substrate layer and the chemical mechanical polish (CMP) planarized patterned layer, where at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer has a first aqueous contact angle. There is then treated the at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer having the first aqueous contact angle to provide at least one of a hydrophilic chemical mechanical polish (CMP) substrate layer and a hydrophilic chemical mechanical polish (CMP) planarized patterned layer having a second aqueous contact angle less than the first aqueous contact angle. Finally, there is then removed the chemical mechanical polish (CMP) residue layer from the at least one of the hydrophilic chemical mechanical polish (CMP) substrate layer and the hydrophilic chemical mechanical polish (CMP) planarized patterned layer with an aqueous cleaner composition.

摘要翻译： 在用于从衬底上除去化学机械抛光（CMP）残留层的方法中，首先提供衬底。 然后在衬底上形成：（1）其中形成有孔的化学机械抛光（CMP）衬底层; （2）化学机械抛光（CMP）平面化图案层，其形成在化学机械抛光（CMP）衬底层内的孔内; 化学机械抛光（CMP）残留层形成在至少一个化学机械抛光衬底层和化学机械抛光（CMP）平面化图案层上，其中化学机械抛光（CMP）衬底 层和化学机械抛光（CMP）平面化图案层具有第一水接触角。 然后，处理具有第一水接触角的化学机械抛光（CMP）衬底层和化学机械抛光（CMP）平坦化图案化层中的至少一个以提供亲水化学机械抛光（CMP）衬底中的至少一个 层和亲水化学机械抛光（CMP）平面化图案层，其具有小于第一水接触角的第二水接触角。 最后，用水性清洁剂组合物从亲水化学机械抛光（CMP）衬底层和亲水化学机械抛光（CMP）平坦化图案化层中的至少一个去除化学机械抛光（CMP）残留层。

公开(公告)号：US06500753B2

公开(公告)日：2002-12-31

申请号：US09838209

申请日：2001-04-20

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

IPC分类号： H01L218238

CPC分类号： H01L21/7684 ,  H01L21/76838 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.

摘要翻译： 本发明教导了铜线的添加，这些铜线被添加到隔离铜线或铜线集合内的选定铜线。 本发明还教导了将铜端盖添加到铜线集合中的隔离铜线或铜线。 本发明进一步教导了铜线集合中用于隔离铜线或选定铜线的铜线的扩大。

公开(公告)号：US06239023B1

公开(公告)日：2001-05-29

申请号：US09320757

申请日：1999-05-27

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/76838 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.