利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

244 条记录 (耗时 0.031 秒)

    Eliminate broken line damage of copper after CMP
    1.
    发明授权
    Eliminate broken line damage of copper after CMP 失效
    消除CMP后的铜线损伤

    公开(公告)号：US06736701B1

    公开(公告)日：2004-05-18

    申请号：US09989838

    申请日：2001-11-20

    申请人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    发明人： Shau-Lin Shue ,  Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    IPC分类号： B24B100

    CPC分类号： B24B37/042 ,  B24B21/04

    摘要： A new method is provided for the post-deposition treatment of copper lines. A damascene copper line pattern whereby a TaN barrier layer and a seed layer have been provided is polished. Under the first embodiment of the invention, the deposited copper is polished (Cu CMP), the surface of the wafer is rinsed using a first High Flow DI rinse that contains a TBA inhibitor. The TaN CMP is performed immediately following the first High Flow DI rinse. A second High Flow DI rinse is applied using DI water that contains TBA inhibitor. The required following rinse step is executed immediately after the second High Flow DI rinse has been completed. Under the second embodiment of the invention, the process of CMP has been divided in two distinct steps where the first step is aimed at corrosion elimination and the second step is aimed at elimination of mechanical damage to the polished copper. The processing conditions for the second processing step have been extended and optimized, thereby using a second belt of a CMP apparatus.

    摘要翻译： 提供了一种新的铜线后处理方法。 抛光已经提供TaN阻挡层和种子层的镶嵌铜线图案。 在本发明的第一实施例中，抛光沉积的铜（Cu CMP），使用含有TBA抑制剂的第一高流量DI冲洗冲洗晶片的表面。 在第一次高流量DI冲洗之后立即执行TaN CMP。 使用含有TBA抑制剂的去离子水进行第二次高流量DI冲洗。 第二次高流量DI冲洗完成后立即执行所需的冲洗步骤。 在本发明的第二个实施方案中，CMP的方法分为两个不同的步骤，其中第一步骤旨在消除腐蚀，第二步骤旨在消除抛光铜的机械损伤。 第二处理步骤的处理条件已被扩展和优化，从而使用CMP设备的第二带。

    Dual-hardness polishing pad for linear polisher and method for fabrication
    2.
    发明授权
    Dual-hardness polishing pad for linear polisher and method for fabrication 有权
    用于线性抛光机的双硬度抛光垫及其制造方法

    公开(公告)号：US06409587B1

    公开(公告)日：2002-06-25

    申请号：US09713827

    申请日：2000-11-15

    申请人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

    发明人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

    IPC分类号： B24D1100

    CPC分类号： B24D11/08 ,  B24B21/04 ,  B24B37/24 ,  G06T9/007

    摘要： A composite, dual-hardness polishing pad for use in a linear chemical mechanical polishing apparatus and a method for forming the pad are described. In the composite, dual-hardness polishing pad, a pad body is first provided which has a leading edge and a trailing edge for mounting to a linear belt immediately adjacent to a second polishing pad. The pad body is fabricated of a material that has a first hardness, the leading edge contacts an object being polished on the composite polishing pad before the trailing edge when the linear belt turns in a linear polishing process. The composite polishing pad further includes a buffer pad that is adhesively joined to the leading edge of the pad body for contacting the object that is being polished, the buffer pad may be fabricated of a material that has a second hardness which is at least 20% smaller than the first hardness such that impact on the object being polished is minimized during a linear polishing process. The present invention is further directed to a method for adhesively joining a buffer pad to a pad body of a polishing pad.

    摘要翻译： 描述了用于线性化学机械抛光装置的复合双硬度抛光垫和用于形成垫的方法。 在复合材料双硬度抛光垫中，首先提供具有前缘和后缘的垫体，用于安装在紧邻第二抛光垫的线性带上。 垫体由具有第一硬度的材料制成，当线性带在线性抛光过程中转动时，前缘在后缘之前在复合抛光垫上接触待抛光的物体。 所述复合抛光垫还包括缓冲垫，所述缓冲垫粘合地连接到所述垫体的前缘以接触被抛光的物体，所述缓冲垫可以由具有至少20％的第二硬度的材料制成， 小于第一硬度，使得在线性抛光工艺期间对被抛光物体的冲击最小化。 本发明还涉及一种用于将缓冲垫粘合地结合到抛光垫的衬垫体的方法。

    Method to eliminate copper CMP residue of an alignment mark for damascene processes
    4.
    发明授权
    Method to eliminate copper CMP residue of an alignment mark for damascene processes 有权
    消除用于镶嵌工艺的对准标记的铜CMP残留物的方法

    公开(公告)号：US06383930B1

    公开(公告)日：2002-05-07

    申请号：US09902896

    申请日：2001-07-12

    申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    IPC分类号： H01K2144

    CPC分类号： H01L21/76885 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A new method is provided that affects the polishing rate of the surface of a layer of copper, that has been deposited over the surface of a layer of dielectric. Copper damascene structures have been created in the surface of the layer of dielectric, the layer of dielectric also overlies an alignment mark. The surface of the layer of dielectric that is aligned with the alignment mark is provided with dummy damascene structures, assuring equal polishing rates for active damascene structures and the surface region of the layer of dielectric overlying an alignment mark.

    摘要翻译： 提供了一种新的方法，其影响已经沉积在电介质层的表面上的铜层的表面的抛光速率。 在电介质层的表面已经形成铜镶嵌结构，电介质层也覆盖对准标记。 与对准标记对准的电介质层的表面设置有虚拟镶嵌结构，确保活性镶嵌结构的相同抛光速率和覆盖对准标记的电介质层的表面区域。

    Method and apparatus for preventing metal corrosion during chemical mechanical polishing
    5.
    发明授权
    Method and apparatus for preventing metal corrosion during chemical mechanical polishing 有权
    化学机械抛光时防止金属腐蚀的方法和装置

    公开(公告)号：US06634930B1

    公开(公告)日：2003-10-21

    申请号：US09635013

    申请日：2000-08-09

    申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

    发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

    IPC分类号： B24B100

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.

    摘要翻译： 本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。 在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它 金属层，通过浆料溶液。 只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

    Method to eliminate post-CMP copper flake defect
    6.
    发明授权
    Method to eliminate post-CMP copper flake defect 有权
    消除CMP后铜片缺陷的方法

    公开(公告)号：US06544891B1

    公开(公告)日：2003-04-08

    申请号：US09945435

    申请日：2001-09-04

    申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

    IPC分类号： H01L2144

    CPC分类号： H01L21/7684 ,  H01L21/76838

    摘要： A method of copper metallization wherein copper flaking and metal bridging problems are eliminated by an annealing process is described. A first metal line is provided on an insulating layer overlying a semiconductor substrate. A dielectric stop layer is deposited overlying the first metal line. A dielectric layer is deposited overlying the dielectric stop layer. An opening is etched through the dielectric layer and the dielectric stop layer to the first metal line. A barrier metal layer is deposited over the surface of the dielectric layer and within the opening. A copper layer is deposited over the surface of the barrier metal layer. The copper layer and barrier metal layer not within the opening are polished away wherein after a time period, copper flakes form on the surface of the copper and dielectric layers. The copper layer and the dielectric layer are alloyed whereby the copper layer is stabilized and the copper flakes are removed to complete copper damascene metallization in the fabrication of an integrated circuit.

    摘要翻译： 描述了通过退火工艺消除铜剥落和金属桥接问题的铜金属化方法。 第一金属线设置在覆盖在半导体衬底上的绝缘层上。 沉积在第一金属线上的电介质停止层。 介电层沉积在介电阻挡层上。 通过介电层和电介质停止层蚀刻开口到第一金属线。 阻挡金属层沉积在电介质层的表面上并且在开口内。 在阻挡金属层的表面上沉积铜层。 不在开口内的铜层和阻挡金属层被抛光，其中在一段时间之后，在铜和电介质层的表面上形成铜片。 将铜层和电介质层合金化，由此铜层稳定，并且在制造集成电路中去除铜片以完成铜镶嵌金属化。

    Slurry dispenser having multiple adjustable nozzles
    7.
    发明授权
    Slurry dispenser having multiple adjustable nozzles 有权
    浆料分配器具有多个可调喷嘴

    公开(公告)号：US06398627B1

    公开(公告)日：2002-06-04

    申请号：US09815427

    申请日：2001-03-22

    申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

    发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

    IPC分类号： B24B900

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A slurry dispensing unit for a chemical mechanical polishing apparatus equipped with multiple slurry dispensing nozzles is disclosed. The slurry dispensing unit is constructed by a dispenser body that has a delivery conduit, a return conduit and a U-shape conduit connected in fluid communication therein between for flowing continuously a slurry solution therethrough and a plurality of nozzles integrally connected to and in fluid communication with a fluid passageway in the delivery conduit for dispensing a slurry solution. The multiple slurry dispensing nozzles may either have a fixed opening or adjustable openings by utilizing a flow control valve at each nozzle opening.

    摘要翻译： 公开了一种用于配备有多个浆料分配喷嘴的化学机械抛光设备的浆料分配单元。 浆料分配单元由分配器主体构成，分配器主体具有输送管道，回流管道和连接在其中的流体连通的U形管道，用于连续地流动通过其中的浆液;以及多个喷嘴，其一体地连接到流体连通 在输送管道中具有用于分配浆液的流体通道。 多个浆料分配喷嘴可以通过在每个喷嘴开口处利用流量控制阀来具有固定的开口或可调节的开口。

    Copper CMP defect reduction by extra slurry polish
    9.
    发明申请
    Copper CMP defect reduction by extra slurry polish 失效
    通过额外的浆料抛光减少铜CMP缺陷

    公开(公告)号：US20050106872A1

    公开(公告)日：2005-05-19

    申请号：US10714985

    申请日：2003-11-17

    申请人： William Hong ,  Chia-Che Chuang ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

    发明人： William Hong ,  Chia-Che Chuang ,  Chi-Wei Chung ,  Wen-Chih Chiou ,  Ying-Ho Chen ,  Syun-Ming Jang

    IPC分类号： B24B1/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/02074 ,  H01L21/02065 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.

    摘要翻译： 公开了作为CMP工艺流程的一部分的氧化物抛光工艺。 在第一抛光站抛光铜层并且在第二抛光站抛光扩散阻挡层之后，在第三抛光工位上的键序列是施加第一氧化物浆料和第一DI水冲洗，然后是第二抛光 氧化物浆液，然后用第二次DI水冲洗。 因此，缺陷计数从几千减少到小于100.另一个重要因素是能够更有效地除去颗粒的低下降力。 改进的氧化物抛光方法具有与单一氧化物抛光剂和DI水漂洗方法相同的生产量，并且可以在任何三种浆料铜CMP工艺流程中实施。