摘要:
In a method of inspecting a mask, an image of a pattern on the mask may be obtained. A histogram of the image by grey levels may be obtained. The histogram may be compared with information of the pattern to detect a defect of the mask. Thus, reliability of defect detection in the mask may be remarkably improved.
摘要:
In a method of inspecting a mask, an image of a pattern on the mask may be obtained. A histogram of the image by grey levels may be obtained. The histogram may be compared with information of the pattern to detect a defect of the mask. Thus, reliability of defect detection in the mask may be remarkably improved.
摘要:
A method of adjusting pattern density includes determining a reference pattern density, defining dummy generation fields and designed patterns, forming basic dummy patterns on the dummy generation fields, evaluating a total pattern density from a sum of a density of the designed patterns and a density of the basic dummy patterns, adjusting a size of the basic dummy patterns so that the total pattern density reaches the reference pattern density, and combining data of the adjusted dummy patterns with data of the designed patterns.
摘要:
In a method of designing a mask layout, a wiring region for forming a metal wire is established, the wiring region having at least a standard width. Contact regions for forming contacts electrically connected to the metal wire are established in the wiring region. The contact regions adjacent to each other are grouped to divide the wiring region into a first region and a second region including the contact regions. First dummy regions are established in the first region, the first dummy regions corresponding to regions for forming first dummy patterns. Second dummy regions are established among the contact regions in the second region, the second dummy regions corresponding to regions for forming second dummy patterns.
摘要:
In a method of designing a mask layout, a wiring region for forming a metal wire is established, the wiring region having at least a standard width. Contact regions for forming contacts electrically connected to the metal wire are established in the wiring region. The contact regions adjacent to each other are grouped to divide the wiring region into a first region and a second region including the contact regions. First dummy regions are established in the first region, the first dummy regions corresponding to regions for forming first dummy patterns. Second dummy regions are established among the contact regions in the second region, the second dummy regions corresponding to regions for forming second dummy patterns.
摘要:
Disclosed is method for estimating statistical distribution characteristics of product parameters. The method comprises determining n number of product parameters, which characterize a product, and m number of characteristic parameters dependent on the product parameters, determining m number of correlation functions that represent the characteristic parameters in terms of the product parameters, and obtaining inverse functions of the correlation functions that represent the product parameters in terms of the characteristic parameters. After fabricating test products to empirically determine quantitative relations between the product and characteristic parameters, the method includes measuring k number of test products and preparing measured data of the characteristic parameters. Thereafter, the method includes estimating statistical characteristics of the product parameters corresponding with a distribution of the measured data of the characteristic parameters using inverse functions of the correlation functions.
摘要:
A method for estimating statistical distribution characteristics of physical parameters of a semiconductor device includes manufacturing a plurality of semiconductor device chips, each having a plurality of transistors, preparing electrical characteristic data by measuring electrical characteristics of the plurality of transistors included in the plurality of chips, extracting an inter-chip distribution characteristic and an intra-chip distribution characteristic of the electrical characteristics by analyzing the electrical characteristic data, generating random number data satisfying the extracted inter-chip and intra-chip distribution characteristics, and performing a simulation for extracting statistical distribution characteristic data of the physical parameters of the chips, based on the random number data.
摘要:
A method for estimating statistical distribution characteristics of physical parameters of a semiconductor device includes manufacturing a plurality of semiconductor device chips, each having a plurality of transistors, preparing electrical characteristic data by measuring electrical characteristics of the plurality of transistors included in the plurality of chips, extracting an inter-chip distribution characteristic and an intra-chip distribution characteristic of the electrical characteristics by analyzing the electrical characteristic data, generating random number data satisfying the extracted inter-chip and intra-chip distribution characteristics, and performing a simulation for extracting statistical distribution characteristic data of the physical parameters of the chips, based on the random number data.
摘要:
Disclosed is method for estimating statistical distribution characteristics of product parameters. The method comprises determining n number of product parameters, which characterize a product, and m number of characteristic parameters dependent on the product parameters, determining m number of correlation functions that represent the characteristic parameters in terms of the product parameters, and obtaining inverse functions of the correlation functions that represent the product parameters in terms of the characteristic parameters. After fabricating test products to empirically determine quantitative relations between the product and characteristic parameters, the method includes measuring k number of test products and preparing measured data of the characteristic parameters. Thereafter, the method includes estimating statistical characteristics of the product parameters corresponding with a distribution of the measured data of the characteristic parameters using inverse functions of the correlation functions.
摘要:
A method for simulating an integrated circuit includes performing a power supply voltage tuning operation to find a power supply voltage at which a simulation of the integrated circuit at an operating frequency passes a functional requirement, identifying a weak signal node based on the simulation result, and performing a size tuning operation on the weak signal node of the integrated circuit.