Semiconductor module
    3.
    发明授权

    公开(公告)号:US12046584B2

    公开(公告)日:2024-07-23

    申请号:US17861217

    申请日:2022-07-10

    摘要: A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

    SWITCHING COMPONENTS
    4.
    发明公开

    公开(公告)号:US20230253891A1

    公开(公告)日:2023-08-10

    申请号:US18004712

    申请日:2021-07-07

    发明人: Ole MÜHLFELD

    摘要: An apparatus is described having: a baseplate; an AC busbar mounted on the baseplate; a DC busbar having an upper DC busbar, a lower DC busbar and an insulating material therebetween, wherein the DC busbar is mounted such that the lower DC busbar is mounted to the baseplate and wherein the upper DC busbar has one or more openings through which the lower DC busbar is exposed; a first group of switching components mounted on the AC busbar, wherein the first group of switching components are connected to the upper DC busbar using first electrical connection means; and a second group of switching components mounted on the lower DC busbar, wherein at least one of the switching components of said second group of switching components is mounted within one of said openings, wherein the second group of switching components are to the AC busbar using second electrical connection means.

    Process and device for low-temperature pressure sintering

    公开(公告)号:US11626383B2

    公开(公告)日:2023-04-11

    申请号:US17126139

    申请日:2020-12-18

    摘要: Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

    POWER MODULE
    7.
    发明申请

    公开(公告)号:US20230032893A1

    公开(公告)日:2023-02-02

    申请号:US17781407

    申请日:2020-11-13

    发明人: Jörg BERGMANN

    IPC分类号: H01L25/07 H01L25/18

    摘要: A power module (2) including a plurality of rectangular electrical power components (4, 4′) arranged on a substrate (6). The sides of at least a subset of the rectangular electrical power components (4, 4′) are not orthogonal to a line (12, 12′) that passes through the geometric centre (C) of the rectangular electrical power components (4, 4′) of the subset and extends orthogonal to a side (L, M) of the substrate (6).

    Semiconductor module
    8.
    发明授权

    公开(公告)号:US11532600B2

    公开(公告)日:2022-12-20

    申请号:US15931703

    申请日:2020-05-14

    摘要: A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

    SEMICONDUCTOR MODULE
    9.
    发明申请

    公开(公告)号:US20220344310A1

    公开(公告)日:2022-10-27

    申请号:US17861217

    申请日:2022-07-10

    摘要: A half bridge power module (1) comprising a substrate (2) comprising an inner load track (11), two intermediate load tracks (12, 14) and two outer load tracks (10,13), wherein an external terminal is mounted on one of the intermediate load tracks (12, 14), an external terminal (3, 4) is mounted on one of the outer load tracks (10, 13) and an external terminal (5) is mounted on the inner load track (11); wherein semiconductor switches (101, 12, 105, 106) are mounted on the outer load tracks (10, 13) and are electrically connected to the intermediate load track (12); and semiconductor switches (103, 104, 107, 108) are mounted on the intermediate load tracks (12, 14) and are electrically connected to the inner load track (11).

    POWER ELECTRONICS MODULE WITH IMPROVED COOLING

    公开(公告)号:US20220295662A1

    公开(公告)日:2022-09-15

    申请号:US17607959

    申请日:2020-04-30

    IPC分类号: H05K7/20

    摘要: The invention relates to a power electronics module including a flat circuit carrier (5) and an electronic assembly (10) arranged in an electrically contacting manner on the upper flat side of the circuit carrier (5) and cooling bodies (20) thermally in contact with the underside of the circuit carrier (5), wherein a heat-conducting bridge (30) arranged on the upper side of the circuit carrier (5), spanning the assembly (10) and extensively covering same, wherein the heat-conducting bridge (30) is in thermal contact with the cooling body (20) at mounting points arranged next to the assembly (10) and the space between the heat-conducting bridge (30) and the circuit carrier (5) is filled with a heat-conducting potting compound (50).