公开(公告)号：US06689249B2

公开(公告)日：2004-02-10

申请号：US09947194

申请日：2001-09-04

申请人： Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

发明人： Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

IPC分类号： C23F108

CPC分类号： H01L21/67126 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3266 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/68735 ,  H02N13/00 ,  Y10S156/915

摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

摘要翻译： 围绕等离子体室中的半导体工件的环或环。 根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。 这种角度取向导致离子轰击提升的套环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性 由于这种周边附近的任何过量的离子密度而产生的过程。 在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。 在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。 在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

公开(公告)号：US06800151B1

公开(公告)日：2004-10-05

申请号：US09926758

申请日：2001-12-13

申请人： Kunihiro Shima

发明人： Kunihiro Shima

IPC分类号： C23F108

CPC分类号： C22F1/08 ,  C22C9/00

摘要： The present invention provides a method of modifying conductivity- and strength-related properties of a Cu—Ag alloy plate produced by predetermined annealing and cold rolling, composed of 4 to 32% by atom of Ag and Cu accounting for the balance, wherein the plate rolled at any reduction ratio is heated at different temperature levels, and strength and conductivity of the plate after the annealing are measured for each annealing temperature so as to establish the conductivity-annealing temperature curve and strength-annealing temperature curve as the correlations between annealing temperature and strength and between annealing temperature and conductivity, then, an optimum annealing temperature required to provide a desired conductivity or strength is determined by extrapolating the above-described conductivity-annealing temperature curve or strength-annealing temperature curve at the desired conductivity or strength, and the plate prepared at any reduction ratio is annealed at the optimum annealing temperature.

摘要翻译： 本发明提供一种通过预定的退火和冷轧制备的Cu-Ag合金板的导电性和强度相关性质的改进方法，其由平衡的4至32原子％的Ag和Cu组成，其中所述板 在各种退火温度下以任意的还原率进行轧制，对退火温度测定退火后的板的强度和导电率，建立导电性退火温度曲线和强度退火温度曲线，作为退火温度 强度和退火温度和电导率之间，则通过以所需的导电性或强度外推上述导电退火温度曲线或强度 - 退火温度曲线来确定提供期望的导电性或强度所需的最佳退火温度，以及 以任何减速比制备的板在Opti处退火 妈妈退火温度。

公开(公告)号：US06585851B1

公开(公告)日：2003-07-01

申请号：US09380520

申请日：1999-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F108

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.