公开(公告)号：US08716144B2

公开(公告)日：2014-05-06

申请号：US13512372

申请日：2010-11-17

申请人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

发明人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

IPC分类号： H01L21/302

CPC分类号： H01L21/3065

摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.

摘要翻译： 通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜， 第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔 在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

公开(公告)号：US08114245B2

公开(公告)日：2012-02-14

申请号：US10304869

申请日：2002-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/509 ,  C23C16/52 ,  C23C16/505 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

公开(公告)号：US07628931B2

公开(公告)日：2009-12-08

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于使由涡轮泵将从处理室排出的废气的至少一部分（循环气体Q2）返回到喷头，循环气体管道150设置有主气体供给系统， 从气体源140经由多个主要气体出口孔h1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h2将循环气体供给到处理室，主气体供给系统 循环气体供给系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US20090221148A1

公开(公告)日：2009-09-03

申请号：US12393466

申请日：2009-02-26

申请人： Shuichiro Uda ,  Yusuke Hirayama

发明人： Shuichiro Uda ,  Yusuke Hirayama

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/3086

摘要： A plasma etching method includes etching a single crystalline silicon layer of a substrate to be processed through a patterned upper layer formed on the single crystalline silicon layer by using a plasma of a processing gas, wherein forming a protection film at a sidewall portion of the upper layer by using a plasma of a carbon-containing gas is carried out before said etching the single crystalline silicon layer.

摘要翻译： 等离子体蚀刻方法包括通过使用处理气体的等离子体通过形成在单晶硅层上的图案化上层来蚀刻待处理衬底的单晶硅层，其中在上层的侧壁部分形成保护膜 在所述蚀刻单晶硅层之前进行使用含碳气体的等离子体的层。

公开(公告)号：US20060243389A1

公开(公告)日：2006-11-02

申请号：US11410120

申请日：2006-04-25

申请人： Yusuke Hirayama ,  Kazuya Nagaseki

发明人： Yusuke Hirayama ,  Kazuya Nagaseki

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01L21/3065

摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.

摘要翻译： 基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。 等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。 使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。 屏蔽构件具有通孔。 该方法包括通过等离子体源径向漫射等离子体的步骤。

公开(公告)号：US20050279731A1

公开(公告)日：2005-12-22

申请号：US11197434

申请日：2005-08-05

申请人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

发明人： Masashi Saito ,  Yusuke Hirayama ,  Itsuko Sakai ,  Tokuhisa Ohiwa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76897

摘要： In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processing gas from the processing chamber 110 and a circulating gas piping 150 for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1 supplied from a gas source 140 into the processing chamber via a plurality of primary gas outlet holes h1 and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

摘要翻译： 为了便于循环气体的控制，在具有用于经由多个气体供给孔向处理室供给处理气体的喷淋头200的处理装置100中，用于从处理室110排出处理气体的涡轮泵120 以及循环气体管道150，用于将由涡轮泵从处理室排出的废气的至少一部分（循环气体Q 2）返回到喷头，循环气体管道150设置有主气体供给系统， Q 1经由多个主气体出口孔h 1和循环气体供给系统从气体源140供给到处理室，循环气体供给系统通过多个循环气体供给孔h 2将循环气体供给到处理室， 主要供气系统和循环供气系统构成为彼此独立的系统。 由于一次气体和循环气体只能在处理室中混合，所以可以更容易地控制循环气体，而无需实施压力控制。

公开(公告)号：US20120238098A1

公开(公告)日：2012-09-20

申请号：US13512372

申请日：2010-11-17

申请人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

发明人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

IPC分类号： H01L21/308

CPC分类号： H01L21/3065

摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.

摘要翻译： 通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜， 第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔 在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

公开(公告)号：US20090242520A1

公开(公告)日：2009-10-01

申请号：US12410672

申请日：2009-03-25

申请人： Yusuke HIRAYAMA

发明人： Yusuke HIRAYAMA

IPC分类号： B23K10/00

CPC分类号： H01J37/32376

摘要： A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.

摘要翻译： 一种等离子体处理装置，包括：本体等离子体发生器，其设置在面对安装台，用于在气密处理室中安装待处理的基板，用于允许等离子体在待处理的基板上局部反应; 以及用于移动局部等离子体发生器的移动单元。 局部等离子体发生器具有用于排出偏移气体的偏移气体排出机构，其抵消从局部等离子体发生器的内部排放的气体的等离子体的反应。

公开(公告)号：US08975191B2

公开(公告)日：2015-03-10

申请号：US13983826

申请日：2012-02-07

申请人： Kazuhito Tohnoe ,  Yusuke Hirayama ,  Yasuyoshi Ishiyama ,  Wataru Hashizume

发明人： Kazuhito Tohnoe ,  Yusuke Hirayama ,  Yasuyoshi Ishiyama ,  Wataru Hashizume

IPC分类号： H01L21/3065 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/3065 ,  H01J2237/334 ,  H01L21/3086 ,  H01L21/76898

摘要： There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.

摘要翻译： 提供了一种等离子体蚀刻方法，其包括蚀刻含有硅和氮的中间层并位于形成在基板的表面上的抗蚀剂掩模下方的第一工艺，以使位于中间层下方的硅层暴露 通过抗蚀剂掩模和中间层的第二工序，随后向基板供给氯气以使反应产物附着在抗蚀剂掩模和中间层的开口部分的侧壁上的第二工艺，以及蚀刻部分 使用含硫和氟的工艺气体对应于中间层的开口部分的硅层，以在硅层中形成凹陷。

公开(公告)号：US08664117B2

公开(公告)日：2014-03-04

申请号：US13582536

申请日：2011-03-04

申请人： Katsuyuki Ono ,  Yusuke Hirayama ,  Hideyuki Hatoh

发明人： Katsuyuki Ono ,  Yusuke Hirayama ,  Hideyuki Hatoh

IPC分类号： H01L21/44

CPC分类号： H01L23/5226 ,  H01L21/31138 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.

摘要翻译： 提供了一种通过形成垂直形状的孔来实现小型化的半导体器件制造方法，其能够与常规方法相比能够减少工艺数量并且能够提高生产率。 半导体器件制造方法包括：在衬底中形成孔; 在孔内形成聚酰亚胺膜; 各向异性地蚀刻基板，而不使用覆盖孔内的聚酰亚胺膜的侧壁部分的掩模，并且在聚酰亚胺膜的侧壁部分保留在孔内时，去除孔内的聚酰亚胺膜的底部的至少一部分; 并用导电金属填充孔。