公开(公告)号：US08114245B2

公开(公告)日：2012-02-14

申请号：US10304869

申请日：2002-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/509 ,  C23C16/52 ,  C23C16/505 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

公开(公告)号：US06585851B1

公开(公告)日：2003-07-01

申请号：US09380520

申请日：1999-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F108

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

公开(公告)号：US6153068A

公开(公告)日：2000-11-28

申请号：US35325

申请日：1998-03-05

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/32082 ,  C23C14/354 ,  H01J37/3266 ,  H01J37/3402

摘要： The present invention provides a sputtering device provided with two electrodes I and II of parallel plate type within a vessel inside which pressure can be reduced, wherein: a target to be sputtered is placed on said electrode I, and a base body on which a film is to be deposited is placed on said electrode II, with the target and the base body being opposed to each other; a process gas is introduced into said vessel from a gas supply system; radio frequency power is applied to said target through at least said electrode I so as to excite plasma between the electrode I and the electrode II; characterized in that: outside said vessel, is provided a means for introducing magnetic field horizontal at least to a surface to be sputtered of said target.

摘要翻译： 本发明提供了一种溅射装置，其在容器内设置有平行板型的两个电极I和II，其中压力可以减小，其中：将被溅射的靶放置在所述电极I上， 被放置在所述电极II上，其中靶和基体彼此相对; 从气体供应系统将工艺气体引入所述容器中; 通过至少所述电极I向所述靶施加射频功率，以激发电极I和电极II之间的等离子体; 其特征在于，在所述容器外部设置有至少水平地将磁场引入要溅射所述靶的表面的装置。

公开(公告)号：US20120238098A1

公开(公告)日：2012-09-20

申请号：US13512372

申请日：2010-11-17

申请人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

发明人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

IPC分类号： H01L21/308

CPC分类号： H01L21/3065

摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.

摘要翻译： 通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜， 第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔 在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

公开(公告)号：US08975191B2

公开(公告)日：2015-03-10

申请号：US13983826

申请日：2012-02-07

申请人： Kazuhito Tohnoe ,  Yusuke Hirayama ,  Yasuyoshi Ishiyama ,  Wataru Hashizume

发明人： Kazuhito Tohnoe ,  Yusuke Hirayama ,  Yasuyoshi Ishiyama ,  Wataru Hashizume

IPC分类号： H01L21/3065 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/3065 ,  H01J2237/334 ,  H01L21/3086 ,  H01L21/76898

摘要： There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.

摘要翻译： 提供了一种等离子体蚀刻方法，其包括蚀刻含有硅和氮的中间层并位于形成在基板的表面上的抗蚀剂掩模下方的第一工艺，以使位于中间层下方的硅层暴露 通过抗蚀剂掩模和中间层的第二工序，随后向基板供给氯气以使反应产物附着在抗蚀剂掩模和中间层的开口部分的侧壁上的第二工艺，以及蚀刻部分 使用含硫和氟的工艺气体对应于中间层的开口部分的硅层，以在硅层中形成凹陷。

公开(公告)号：US08664117B2

公开(公告)日：2014-03-04

申请号：US13582536

申请日：2011-03-04

申请人： Katsuyuki Ono ,  Yusuke Hirayama ,  Hideyuki Hatoh

发明人： Katsuyuki Ono ,  Yusuke Hirayama ,  Hideyuki Hatoh

IPC分类号： H01L21/44

CPC分类号： H01L23/5226 ,  H01L21/31138 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.

摘要翻译： 提供了一种通过形成垂直形状的孔来实现小型化的半导体器件制造方法，其能够与常规方法相比能够减少工艺数量并且能够提高生产率。 半导体器件制造方法包括：在衬底中形成孔; 在孔内形成聚酰亚胺膜; 各向异性地蚀刻基板，而不使用覆盖孔内的聚酰亚胺膜的侧壁部分的掩模，并且在聚酰亚胺膜的侧壁部分保留在孔内时，去除孔内的聚酰亚胺膜的底部的至少一部分; 并用导电金属填充孔。

公开(公告)号：US07405162B2

公开(公告)日：2008-07-29

申请号：US11231979

申请日：2005-09-22

申请人： Koji Maruyama ,  Yusuke Hirayama ,  Nozomi Hirai ,  Takanori Mimura

发明人： Koji Maruyama ,  Yusuke Hirayama ,  Nozomi Hirai ,  Takanori Mimura

IPC分类号： H01L21/302

CPC分类号： H01L21/32132

摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.

摘要翻译： 蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层 预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。 蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。

公开(公告)号：US08821683B2

公开(公告)日：2014-09-02

申请号：US11410120

申请日：2006-04-25

申请人： Yusuke Hirayama ,  Kazuya Nagaseki

发明人： Yusuke Hirayama ,  Kazuya Nagaseki

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01L21/3065

摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.

摘要翻译： 基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。 等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。 使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。 屏蔽构件具有通孔。 该方法包括通过等离子体源径向漫射等离子体的步骤。

公开(公告)号：US20140134846A1

公开(公告)日：2014-05-15

申请号：US14131704

申请日：2012-07-10

申请人： Yusuke Hirayama ,  Kazuhito Tohnoe

发明人： Yusuke Hirayama ,  Kazuhito Tohnoe

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3266 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76898

摘要： A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S11) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S12) of etching the silicon layer using the first processing gas, a second depositing step (S13) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S14) of further etching the silicon layer using the first processing gas. The second depositing step (S13) and the second etching step (S14) are alternately repeated at least two times each.

摘要翻译： 提供了一种等离子体蚀刻方法，用于使用第一处理气体形成孔，以蚀刻包括形成为预定图案的氧化硅膜的待处理衬底的硅层。 该方法包括使用含有一氧化碳气体的第二处理气体在氧化硅膜的表面上沉积保护膜的第一沉积步骤（S11），使用第一处理气体蚀刻硅层的第一蚀刻步骤（S12） ，第二沉积步骤（S13），其使用第二处理气体将保护膜沉积在通过第一蚀刻步骤蚀刻的孔的侧壁上;以及第二蚀刻步骤（S14），使用第一处理进一步蚀刻硅层 加油站。 第二沉积步骤（S13）和第二蚀刻步骤（S14）交替重复至少两次。

公开(公告)号：US20060289296A1

公开(公告)日：2006-12-28

申请号：US11473052

申请日：2006-06-23

申请人： Koji Maruyama ,  Yusuke Hirayama

发明人： Koji Maruyama ,  Yusuke Hirayama

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01L21/67069 ,  B81C1/00531 ,  B81C2201/0132 ,  H01J37/32568 ,  H01J37/32935

摘要： A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.

摘要翻译： 一种等离子体处理方法，其用于具有安装台和顶板的等离子体处理装置的处理室中，在安装台和顶棚部之间形成有等离子体处理空间，包括将目标物体安装在 将顶棚部分和安装台之间的间隙设定为大于约25mm且小于约65mm，并且通过在处理空间中产生等离子体对目标物体进行等离子体处理。 目标物体包括具有开口的开口图案，并且至少部分开口等于或大于约500μm。