公开(公告)号：US20040189173A1

公开(公告)日：2004-09-30

申请号：US10397799

申请日：2003-03-26

Inventor： Aref Chowdhury ,  Hock Min Ng ,  Richart Elliott Slusher

IPC: H01J001/02

CPC classification number: B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

Abstract translation: 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US20040183420A1

公开(公告)日：2004-09-23

申请号：US10730911

申请日：2003-12-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yong-wan Jin ,  Jung-woo Kim ,  Jae-eun Jung ,  Young-Jun Park

IPC: H01J001/02 ,  H01J001/14

CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J3/021 ,  H01J29/467 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A field emission device using carbon nanotubes (CNTs) is provided. The field emission device includes a cathode on which a plurality of CNT emitters are arranged, a gate insulating layer having a through hole through which electrons emitted from the CNT emitters pass, and a gate electrode which corresponds to the through hole of the gate insulating layer and has an enlongated gate hole that forms an electric field having different strengths in a first direction and in a second direction orthogonal to the first direction.

Abstract translation: 提供了使用碳纳米管（CNT）的场致发射器件。 场致发射器件包括其上布置有多个CNT发射体的阴极，具有通孔的栅极绝缘层，通过该通孔从CNT发射体发射的电子通过;栅极电极，其对应于栅极绝缘层的通孔 并且具有扩大的栅极孔，其在与第一方向正交的第一方向和第二方向上形成具有不同强度的电场。

公开(公告)号：US20040130251A1

公开(公告)日：2004-07-08

申请号：US10686965

申请日：2003-10-15

Inventor： Zhizhang Chen ,  Paul J. Benning ,  Sriram Ramamoorthi ,  Thomas Novet

IPC: H01J001/02

CPC classification number: B82Y10/00 ,  G11C11/23 ,  H01J1/312 ,  H01J9/025

Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract translation: 发射极包括电子源和设置在电子源上的隧穿层。 阴极层设置在隧道层上。 导电电极具有多层导电材料。 多层包括设置在阴极层上的保护层。 已经蚀刻导电电极以限定开口，从而暴露阴极层的一部分。

公开(公告)号：US20040004422A1

公开(公告)日：2004-01-08

申请号：US10189167

申请日：2002-07-03

Inventor： Holger Claus ,  Zoran Falkenstein

IPC: H01J001/02

CPC classification number: F21V29/51 ,  H01J61/52 ,  H01J65/046

Abstract: Embodiments of the present invention are directed to a method and apparatus for heat pipe cooling of an excimer lamp. In one embodiment, a heat pipe is used to dissipate heat from an excimer lamp. The heat pipe is in direct contact with at least one electrode of the excimer lamp. In one embodiment, heat is transferred through the heat pipe to a cooling point that is electrically isolated from the lamp. In one embodiment, dissipation of heat from the cooling point is done by conventional means. In one embodiment, the heat pipe is on the inside of the lamp. In another embodiment, a heat pipe is attached to the outside of an excimer lamp. In another embodiment, two heat pipes are used, one on the inside and one on the outside of an excimer lamp. In yet another embodiment, a heat pipe is used with a flat lamp.

公开(公告)号：US20030189396A1

公开(公告)日：2003-10-09

申请号：US10405703

申请日：2003-04-03

Applicant: FUTABA CORPORATION

Inventor： Takahiro Niiyama ,  Mitsuru Tanaka ,  Yuji Obara

IPC: H01J001/02

CPC classification number: H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J29/04 ,  H01J2329/00

Abstract: A field emission element includes a substrate, a cathode conductor disposed on the substrate, an insulating layer structure on the cathode conductor that has a first insulating layer on the cathode conductor and a second insulating layer on the first insulating layer, a gate disposed on the second insulating layer, a gate hole provided through the gate and the insulating layer structure to expose a portion of the cathode conductor therethrough, and an emitter on the exposed portion of the cathode conductor in the gate hole. The first insulating layer is covered by the second insulating layer at a side surface of the gate hole and a dielectric constant of the first insulating layer is different from that of the second insulating layer.

Abstract translation: 场发射元件包括衬底，设置在衬底上的阴极导体，阴极导体上的绝缘层结构，阴极导体上具有第一绝缘层，在第一绝缘层上具有第二绝缘层，栅极设置在阴极导体上 第二绝缘层，通过栅极设置的栅极孔和绝缘层结构，以暴露阴极导体的一部分，以及位于栅极孔中的阴极导体的暴露部分上的发射极。 第一绝缘层在栅极孔的侧面由第二绝缘层覆盖，第一绝缘层的介电常数与第二绝缘层的介电常数不同。

公开(公告)号：US20030122466A1

公开(公告)日：2003-07-03

申请号：US10160413

申请日：2002-05-30

Inventor： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC: H01J001/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.

Abstract translation: 场致发射器件及其制造方法技术领域本发明涉及场致发射器件及其制造方法。 该方法包括使用硅半导体工艺形成具有纳米尺寸的孔，然后在孔内形成发射体以形成场致发射器件。 因此，本发明可以降低驱动电压，从而降低功耗。

公开(公告)号：US20030090189A1

公开(公告)日：2003-05-15

申请号：US10287703

申请日：2002-11-05

Applicant: KOITO MANUFACTURING CO., LTD

Inventor： Ken Kato ,  Takahiro Iwai

IPC: H01J001/02

CPC classification number: H01J9/247 ,  H01J5/54

Abstract: A base end 12a of an arc tube unit 12 is inserted in a glass tube 50 which is previously fixed to an insulating plug unit 14, and a shroud tube 18 and the glass tube 50 are then bonded and fixed to each other in such a state that an amount of insertion of the arc tube unit 12 is regulated in order to set a dimension L between an optical reference plane Po of the insulating plug unit 14 and the tip position of a bar-shaped electrode 26B of an arc tube 16 to be a predetermined set dimension Lo. Consequently, the arc tube unit 12 can be fixed and supported on the insulating plug unit 14 with a simple structure in a simple process, and furthermore, it is possible to eliminate a possibility that the shroud tube 18 might be damaged, for example, broken by the fastening force of a metal band as in the conventional art.

Abstract translation: 电弧管单元12的基端12a被插入预先固定到绝缘插头单元14的玻璃管50中，然后将护罩管18和玻璃管50以这种状态彼此粘合固定 调节电弧管单元12的插入量，以便将绝缘插头单元14的光学基准面Po和电弧管16的棒状电极26B的尖端位置之间的尺寸L设定为 预定的设定尺寸Lo。 因此，电弧管单元12可以以简单的结构简单地固定并支撑在绝缘插头单元14上，此外，可以消除护罩管18可能损坏例如破损的可能性 通过金属带的紧固力与传统技术相同。

公开(公告)号：US20030048052A1

公开(公告)日：2003-03-13

申请号：US10227221

申请日：2002-08-23

Inventor： Marcus Kubon ,  Juergen Schoeneich ,  Paul Hellwig

IPC: H01J001/02 ,  H01K001/58 ,  H01J007/24 ,  H01J061/52

CPC classification number: C03C3/06 ,  C03C2201/50 ,  H01J61/302 ,  H01J61/34

Abstract: A discharge lamp is disclosed comprising an enclosed discharge vessel for the generation of an electrical discharge and a casing made of glass which surrounds the discharge vessel. In order to achieve as constant properties as possible over the service life of the lamp, it is proposed that the glass material of the casing be doped with sodium in a concentration of at least 10 ppm, and preferably at least 30 ppm. According to a further embodiment, it is proposed that other alkali metals (except for sodium) be contained in a maximum concentration of 25 ppm. Surprisingly, by the appropriate choice of the outer bulb, not in direct contact with the actual discharge, the diffusion of sodium from the discharge vessel is reduced. In addition to this, the material of the outer bulb has a reduced inclination to crystallization.

Abstract translation: 公开了一种放电灯，其包括用于产生放电的封闭放电容器和围绕放电容器的由玻璃制成的壳体。 为了在灯的使用寿命期内实现尽可能恒定的特性，提出了壳体的玻璃材料以至少10ppm，优选至少30ppm的浓度掺杂钠。 根据另一个实施方案，提出最大浓度为25ppm的其它碱金属（钠除外）。 令人惊奇的是，通过适当选择外部灯泡，与实际放电不直接接触，钠从放电容器扩散减少。 除此之外，外部灯泡的材料具有降低的结晶倾向。

公开(公告)号：US20030025441A1

公开(公告)日：2003-02-06

申请号：US10191677

申请日：2002-07-08

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J001/02

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 用于稳定有源矩阵场发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US20030015949A1

公开(公告)日：2003-01-23

申请号：US10185793

申请日：2002-06-27

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Masanori Higashi ,  Yoshiharu Nishiura ,  Shigefumi Oda ,  Shunsuke Kakisaka ,  Hiroshi Enami

IPC: H01J001/02

CPC classification number: H01J61/302 ,  H01J61/125

Abstract: A metal halide lamp has an arc tube including an envelope as an arc tube container made of an oxide-based translucent ceramic material, and the arc tube is filled with luminescent materials comprising at least a cerium halide, a sodium halide, a thallium halide and an indium halide. An amount of the cerium halide is in a range from 20 wt % to 69.0 wt %, an amount of the sodium halide is in a range from 30 wt % to 79.0 wt %, and a total amount of the thallium halide and the indium halide is in a range from 1.0 wt % to 20 wt % with respect to the entire metal halides. Accordingly, the arc discharge is spread, bending of the arc discharge toward the arc tube wall is suppressed, and thus, the metal halide lamp has improved luminescent efficiency, where lowering of the flux maintenance factor is suppressed even after a long-time use, and hues of the luminescent colors are corrected.

Abstract translation: 金属卤化物灯具有包括作为由氧化物基半透明陶瓷材料制成的电弧管容器的外壳的电弧管，并且所述电弧管填充有至少包括卤化铈，卤化钠，卤化铊和 卤化铟。 卤化铈的量在20重量％〜69.0重量％的范围内，卤化钠的含量在30重量％〜79.0重量％的范围内，卤化铊和卤化铟的总量 相对于整个金属卤化物的范围为1.0重量％至20重量％。 因此，电弧放电扩大，电弧放电朝向电弧管壁的弯曲受到抑制，因此金属卤化物灯具有提高的发光效率，即使在长时间使用后也降低磁通维持系数， 并且校正发光颜色的色调。