摘要:
The invention provides a method for treating devices based on semiconductor and dielectric materials for improving their electrical, photoelectric, optical, luminescent and noise characteristics, for decreasing internal residual stresses in heterostructures and for increasing the device lifetime and the stability of its parameters. The method comprises subjecting the device to acoustic vibrations in the frequency range of 0.01 to 100 MHz, at an amplitude of relative acoustic strain in the range of 0.2.multidot.10.sup.-5 to 8.multidot.10.sup.-5, for a period of at least 0.25 hour.
摘要:
A fine particulate polishing agent comprises fine particles of a solid solution composed of single-crystal ceric oxide and silicon dioxide and fine particles of silicon dioxide. A slurry polishing agent comprising the fine particulate polishing agent can be prepared by a method which comprises the steps of mixing, with stirring, single-crystal ceric oxide fine particles, silica sol and a liquid; drying the mixture; subjecting the dried particulate material to a thermal treatment at a high temperature and then cooling the solid solution powder formed by the thermal treatment and composed of single crystal ceric oxide and silicon dioxide; again mixing the powder with silica sol and a liquid; and then subjecting the mixture to deagglomeration using a wet pulverizing mill to give a slurry.