Method of treatment of devices based on semiconductor and dielectric
materials
    1.
    发明授权
    Method of treatment of devices based on semiconductor and dielectric materials 失效
    基于半导体和电介质材料的器件的处理方法

    公开(公告)号:US5997659A

    公开(公告)日:1999-12-07

    申请号:US916194

    申请日:1997-08-21

    IPC分类号: H01L21/302 H01L21/309

    CPC分类号: H01L21/302

    摘要: The invention provides a method for treating devices based on semiconductor and dielectric materials for improving their electrical, photoelectric, optical, luminescent and noise characteristics, for decreasing internal residual stresses in heterostructures and for increasing the device lifetime and the stability of its parameters. The method comprises subjecting the device to acoustic vibrations in the frequency range of 0.01 to 100 MHz, at an amplitude of relative acoustic strain in the range of 0.2.multidot.10.sup.-5 to 8.multidot.10.sup.-5, for a period of at least 0.25 hour.

    摘要翻译: 本发明提供了一种用于处理基于半导体和电介质材料的器件的方法,用于改善其电,光电,光学,发光和噪声特性,以减少异质结构中的内部残余应力,并增加器件寿命及其参数的稳定性。 该方法包括使器件在0.01至100MHz的频率范围内以0.2×10 -5至8×10 -5范围内的相对声学应变幅度进行至少0.25小时的声振动。