Abstract:
A PHY chip for a synchronous Ethernet system includes N network input/output (I/O) ports, a first external recovered clock input, a first recovered clock output, and a first clock multiplexer having a plurality of data inputs, a select input, and an output coupled to the first recovered clock output, at least one of the data inputs coupled to a first recovered clock from a respective one of the N network I/O ports, a first additional data input coupled to the first external recovered clock input.
Abstract:
A system and method for data sampler drift compensation in a SerDes receiver. Off-data values are received at a drift compensation engine from a plurality of data value selectors coupled to one of a plurality of data sampler pairs of a speculative Decision Feedback Equalizer (DFE) of a SerDes receiver. A drift compensation value for each of the data samplers is generated by the drift compensation engine based upon the off-data values received from each of the plurality of data value selectors and, a sampling level of each of the data samplers of the plurality of data sampler pairs of the DFE is adjusted based upon the drift compensation value from the drift compensation engine.
Abstract:
A circuit for transferring a n-bit phase value between circuits includes a system clock input, a n-bit phase value generator coupled to the system clock input generating a phase value output, and an edge output indicating the phase output value is valid, a latching clock delay circuit having an input coupled to the system clock input, an input coupled to the edge output, a variable phase delay circuit coupled to the phase value output, a delay adder having a first input coupled to the phase value output, a second input coupled to a delay offset signal, and an output coupled to the control input of the variable phase delay circuit, and a phase flip-flop having a data input coupled to the output of the variable phase delay circuit, a clock input coupled to a latching clock output of the variable output clock delay circuit and a Phase Out output.
Abstract:
An SEU immune flip-flop includes a master stage data latch having an input, an output, a clock input, being transparent in response to a clock signal first state and being latched in response to a clock signal second state, a slave stage data latch having an input coupled to the master stage data latch output, an output, a scan output, a slave latch clock input, a scan slave latch having an input coupled to the slave stage data latch scan output, an output, and a clock input, being transparent in response to the clock signal second state and being latched in response to the clock signal first state. The slave stage data latch includes a switched inverter disabled when the slave latch is in a transparent state and enabled when the slave latch is in a latched state having a time delay longer than an SEU time period.
Abstract:
A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line.
Abstract:
Systems and methods are disclosed for operating a highly linearized resistance for a switch through use of a bootstrapped features. In one exemplary implementation, there is provided a method and system that implements a method for operating a circuit configured to provide a highly linearized resistance including receiving a signal via a bootstrapped switch, coupling the received signal to a gate if the received signal is high, receiving a signal via a switch control input coupled to a high impedance element. Moreover, the method includes coupling the high impedance element to the gate and turning off the switch via a gate turn off when the gate turn off pulls the gate low.
Abstract:
The invention comprises a dimming switch for use with a string of light emitting diodes (LEDs). The dimming switch comprises a bipolar junction transistor (BJT) driven in a cascode scheme. The dimming switch also comprises circuitry to offset the current that drives the base of the BJT to provide a controlled amount of current to the LEDs when the dimming input signal is high.
Abstract:
An LED driver circuit for controlling direct current supplied to a plurality of serially connected segments of Light Emitting Diodes (LEDs) is disclosed. In one embodiment, the LED driver circuit comprises a self-commutating circuit, which comprises a plurality of current control elements, each current control element having two ends, a first end connected to a different end of each segment along the plurality of serially connected segments of LEDs and a second end connected to a path to ground. The path to ground comprises a sense resistor and the path to ground is shared by the second end of each current control element. Each current control element is coupled to an adjacent current control element by a cross-regulation circuit and controlled by a signal from an adjacent current control element.
Abstract:
A circuit and method are provided detecting a persistent short circuit in a power MOSFET for the purpose of protecting a load from over-current.
Abstract:
The invention comprises a dimming switch for use with a string of light emitting diodes (LEDs). The dimming switch comprises a bipolar junction transistor (BJT) driven in a cascode scheme. The dimming switch also comprises circuitry to offset the current that drives the base of the BJT to provide a controlled amount of current to the LEDs when the dimming input signal is high.