DEVICE AND METHOD FOR COMBINING LIGHT BEAMS
    93.
    发明公开

    公开(公告)号:US20240247783A1

    公开(公告)日:2024-07-25

    申请号:US18564282

    申请日:2022-05-25

    Abstract: A light source device includes



    a first light source to provide a first input light beam in the direction of a central axis of the light source device,
    a second light source to provide a second input light beam in the direction of the central axis,
    a central reflector,
    a catadioptric reflector to focus light of the first input light beam to the central reflector, and to focus light of the second input light beam to the central reflector, and
    at least one actuator to change the angular position of the central reflector, so as to cause the central reflector to form an output beam by sequentially reflecting light of the first input light beam and light of the second input light beam to the axial direction.

    HIGH-FREQUENCY REFERENCE DEVICE
    94.
    发明公开

    公开(公告)号:US20240192642A1

    公开(公告)日:2024-06-13

    申请号:US18553331

    申请日:2022-02-18

    Inventor: Vladimir ERMOLOV

    CPC classification number: G04F5/14 H03L7/26

    Abstract: A frequency reference device comprising a waveguide with a first end and a second end, a signal transmitter module for generating a high-frequency electromagnetic wave in the waveguide, and a signal receiver module for receiving the high-frequency electromagnetic wave in the waveguide. The component comprises a sealed enclosure, and said sealed enclosure is filled with a gas. The waveguide, first and second radiation coupling probes and the signal transmitter module and the signal receiver module are all located within said scaled enclosure.

    METHOD AND APPARATUS FOR TREATING A FEED BEFORE A QUENCH COLUMN

    公开(公告)号:US20240158699A1

    公开(公告)日:2024-05-16

    申请号:US18279949

    申请日:2022-03-04

    Abstract: A method and a process arrangement for treating a feed before a quench column in an integrated process, in which the integrated process comprises at least one gasifier for forming a gasifier flow, at least one cracking furnace for forming a cracker flow, at least one quench column for treating the feed comprising the gasifier flow and cracker flow and at least one transfer line to supply the feed to the quench column. The gasifier flow is cooled at least partly for killing chemical reactions after a gasification, the cracker flow is cooled at least partly after the cracking furnace, the gasifier flow is combined to the cracker flow before a transfer line valve of the transfer line to form the feed to the quench column, and temperature of the feed is controlled to a predetermined temperature of the transfer line before the quench column.

    Self-resetting single flux-quantum microwave photodetector

    公开(公告)号:US11982700B2

    公开(公告)日:2024-05-14

    申请号:US17796805

    申请日:2021-01-25

    CPC classification number: G01R29/0878

    Abstract: The disclosure relates to a quantum detector configured to receive a microwave signal from a microwave source. The quantum detector comprises a main element formed by a main Josephson junction and a Josephson transmission line which is coupled to the main element for outputting a measurement signal. The Josephson transmission line comprises at least a first set of JTL elements and a second set of JTL elements. The capacitively shunted Josephson junction in each JTL element in the first set is weakly damped, and the JTL element in the second set are more strongly damped than the JTL elements in the first set.

    Wafer level package for device
    100.
    发明公开

    公开(公告)号:US20230382721A1

    公开(公告)日:2023-11-30

    申请号:US18027378

    申请日:2021-09-20

    Inventor: Jae-Wung Lee

    CPC classification number: B81B7/007 B81B2207/097

    Abstract: According to an example aspect of the present invention, there is provided a wafer level package (100) for a device, the package (100) comprising a first substrate (102) and a second substrate (103), at least one insulating stand-off structure (104) between the first substrate (102) and the second substrate (103), a bonding layer (108) on the at least one stand-off structure (104), and a first lateral electrical connection line (109) on a surface of the first substrate (102) and a second lateral electrical connection line (110) on a surface the second substrate (103), wherein electrical connection is formed between the first lateral electrical connection line (109) and the second lateral connection line (110) via the bonding layer (108) of the at least one stand-off structure (104).

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