Abstract:
Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor.
Abstract:
Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue.
Abstract:
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.
Abstract:
An apparatus and method is provided for controlling a stepping motor in a digital photographing apparatus, the apparatus including: a temperature measuring unit for measuring a temperature; and a digital signal processor (DSP) for determining a measured temperature driving value of the stepping motor in correspondence with the measured temperature, changing the determined driving value based on a target position to which the stepping motor is supposed to move, and outputting the changed driving value to the stepping motor. Accordingly, power consumption of image capturing apparatuses may be eventually reduced by reducing power consumption of a stepping motor by driving the stepping motor with different driving values depending on temperatures and positions thereof.
Abstract:
Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.
Abstract:
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.
Abstract:
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
Abstract:
An ultrasound imaging device and method for clutter filtering is provided. The ultrasound imaging device provides logic for calculating signal characteristic values from an in-phase/quadrature-phase (I/Q) of an ultrasound signal reflected from an object and determining to remove a clutter element from the I/Q signal through comparison of the calculated signal characteristic values. Accordingly, the ultrasound imaging device provides a blood flow distribution of the object, more precisely visualized, to a user.
Abstract:
A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.
Abstract:
Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; anda filler filling the trench.