-
公开(公告)号：US20110186812A1
公开(公告)日：2011-08-04
申请号：US12941847
申请日：2010-11-08
Applicant: Tae Yun KIM , Hyo Kun Son
Inventor： Tae Yun KIM , Hyo Kun Son
Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光层包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层。 有源层包括量子阱层，量子势垒层和双阻挡层。
-
公开(公告)号：US20090073789A1
公开(公告)日：2009-03-19
申请号：US12273667
申请日：2008-11-19
Applicant: Tae Yun KIM
Inventor： Tae Yun KIM
CPC classification number: G11C29/12015 , G11C29/14
Abstract: Disclosed is a method for testing a memory device with a long-term clock signal by automatically performing precharge only after activation. In this method, a signal for precharging the banks of the memory device is automatically generated only at the falling edge of an external signal when a signal for activating the banks is applied. Accordingly, the present invention ensures a stable test of the memory device, reducing the testing time.
Abstract translation: 公开了一种通过仅在激活后自动执行预充电来测试具有长期时钟信号的存储器件的方法。 在该方法中，当施加用于激活存储体的信号时，仅在外部信号的下降沿才自动产生用于对存储器件的存储体进行预充电的信号。 因此，本发明确保了存储器件的稳定测试，减少了测试时间。
-
公开(公告)号：US20090057647A1
公开(公告)日：2009-03-05
申请号：US12198728
申请日：2008-08-26
Applicant: Tae Yun KIM , Hyo Kun SON
Inventor： Tae Yun KIM , Hyo Kun SON
IPC: H01L33/00
CPC classification number: H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。
-
公开(公告)号：US20110018021A1
公开(公告)日：2011-01-27
申请号：US12837094
申请日：2010-07-15
Applicant: Tae Yun KIM
Inventor： Tae Yun KIM
CPC classification number: H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/486 , H01L2224/48091 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014
Abstract: Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; anda filler filling the trench.
Abstract translation: 公开了一种发光器件封装及其制造方法。 发光器件封装包括：形成在衬底中的沟槽; 在衬底中的沟槽的第一区域上直接生长的发光结构; 基板上的电极; 将电极与发光结构连接的引线键合; 和填充沟槽的填料。
-
5.发明申请公开(公告)号：US20100280386A1
公开(公告)日：2010-11-04
申请号：US12772088
申请日：2010-04-30
Applicant: Moo Ho BAE , Tae Yun KIM
Inventor： Moo Ho BAE , Tae Yun KIM
IPC: A61B8/06
CPC classification number: G01S15/8981 , A61B8/488
Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue.
Abstract translation: 公开了自适应执行杂波滤波的实施例。 在一个实施例中，作为非限制性示例，超声系统包括：超声数据获取单元，被配置为向目标对象发送和接收超声信号，从而输出多个超声数据，以获得彩色多普勒模式图像 其中，所述目标对象包括组织和血流中的至少一个; 以及处理单元，放置成与所述超声数据获取单元通信并且被配置为将所述多个超声数据定位在复平面上，所述处理单元还被配置为对位于所述复平面上的所述多个超声数据执行圆适配 考虑到组织的速度，对圆形装配的超声数据执行下混合和杂波滤波。
-
Patent Agency Ranking
公开(公告)号：US20090057691A1
公开(公告)日：2009-03-05
申请号：US12199038
申请日：2008-08-27
Applicant: Tae Yun KIM , Hyo Kun Son
Inventor： Tae Yun KIM , Hyo Kun Son
Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光层包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层。 有源层包括量子阱层，量子势垒层和双阻挡层。
-
公开(公告)号：US20120205664A1
公开(公告)日：2012-08-16
申请号：US13453804
申请日：2012-04-23
Applicant: Tae Yun KIM , Hyo Kun Son
Inventor： Tae Yun KIM , Hyo Kun Son
IPC: H01L33/02
CPC classification number: H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer.
Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：有源层; 在所述有源层上的第一氮化物半导体层; 在第一氮化物半导体层上的第一δ-掺杂层; 在第一δ掺杂层上的第二氮化物半导体层; 在所述第二氮化物半导体层上的第二δ-掺杂层; 在第二δ-掺杂层上的第三氮化物半导体层。
-
公开(公告)号：US20110101415A1
公开(公告)日：2011-05-05
申请号：US13004758
申请日：2011-01-11
Applicant: Tae Yun KIM , Hyo Kun Son
Inventor： Tae Yun KIM , Hyo Kun Son
IPC: H01L33/32
CPC classification number: H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。
-
公开(公告)号：US20220297185A1
公开(公告)日：2022-09-22
申请号：US17805322
申请日：2022-06-03
Applicant: Tae Yun KIM
Inventor： Tae Yun KIM
Abstract: An apparatus for continuously preparing nanopowder in which an evaporation amount and speed of a raw material are adjusted is proposed. In one aspect, the apparatus includes a reaction chamber evaporating a raw material using a plasma electrode and a crucible, and a raw material supplier connected to a first side of the reaction chamber and supplying the raw material to the reaction chamber. The apparatus may also include a conveying film moving along a closed loop while capturing and conveying the raw material that has been evaporated or nanopowder that has been crystallized at an upper portion in the reaction chamber. The apparatus may further include a collector connected to a second side of the reaction chamber and collecting the nanopowder conveyed by the conveying film.
-
公开(公告)号：US20120313110A1
公开(公告)日：2012-12-13
申请号：US13589974
申请日：2012-08-20
Applicant: Tae Yun KIM
Inventor： Tae Yun KIM
IPC: H01L33/32
CPC classification number: H01L33/325 , H01L21/0254 , H01L21/0262 , H01L33/12 , H01L33/32
Abstract: Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.
Abstract translation: 公开了一种发光器件。 发光二极管包括发光器件，其包括在第一N型半导体层上包括第一N型半导体层和第二N型半导体层的多个N型半导体层，在第二N型半导体层上的有源层 型半导体层和有源层上的P型半导体层，其中第一N型半导体层包括Si掺杂氮化物层，第二N型半导体层包括Si掺杂氮化物层，并且其中第一 并且第二N型半导体层具有彼此不同的Si杂质浓度。
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.012 seconds)
