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173 条记录 (耗时 0.026 秒)

    Semiconductor device
    91.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07494066B2

    公开(公告)日：2009-02-24

    申请号：US11005458

    申请日：2004-12-06

    申请人： Jun Koyama ,  Toshihiko Saito

    发明人： Jun Koyama ,  Toshihiko Saito

    IPC分类号： G06K19/05

    CPC分类号： G06K19/0713 ,  G06K19/0723 ,  Y10T307/492

    摘要： The invention provides a circuit which provides a stabilized boosting in the case where a semiconductor device typified by a non-contact ID chip includes a circuit which requires a higher voltage than a logic circuit does. By inputting an alternating signal inputted from an antenna to a charge pump circuit as it is or through a logic circuit, a charge pump can operate with a stabilized frequency that a clock frequency is not affected by a variation of elements and the ambient temperature, thus a stabilized boosting can be provided.

    摘要翻译： 本发明提供一种电路，其在以非接触式ID芯片为代表的半导体器件包括需要比逻辑电路高的电压的电路的情况下提供稳定的升压。 通过从天线输入到电荷泵电路的交替信号或通过逻辑电路输入，电荷泵可以稳定的频率工作，时钟频率不受元件的变化和环境温度的影响，因此 可以提供稳定的增压。

    Display device and driving method thereof
    94.
    发明授权
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号：US07330179B2

    公开(公告)日：2008-02-12

    申请号：US10688259

    申请日：2003-10-20

    申请人： Masami Endo ,  Jun Koyama ,  Toshihiko Saito

    发明人： Masami Endo ,  Jun Koyama ,  Toshihiko Saito

    IPC分类号： G06F3/038

    CPC分类号： G09G3/3275 ,  G09G3/20 ,  G09G3/2022 ,  G09G2300/0842 ,  G09G2330/021 ,  G09G2360/18

    摘要： Regarding the time gradation method as the digital gradation expression method, it is an object of the invention to provide a display device which prevents a reduction of frame frequency and implements a low-power-consumption SRAM. The invention overcomes the aforementioned disadvantages of conventional technique by synchronizing a writing and reading by utilizing read and write signals of which states read at a certain timing to select which of two memories is efficient to be written.

    摘要翻译： 关于作为数字灰度表达方法的时间灰度方法，本发明的目的是提供一种防止帧频降低并实现低功耗SRAM的显示装置。 本发明通过利用在一定时刻读出的状态的读写信号来同步写入和读取来克服传统技术的上述缺点，以选择两个存储器中的哪一个有效地被写入。

    Combustor of gas turbine and combustion control method for gas turbine
    95.
    发明申请
    Combustor of gas turbine and combustion control method for gas turbine 有权
    燃气轮机燃烧器及燃气轮机燃烧控制方法

    公开(公告)号：US20070227156A1

    公开(公告)日：2007-10-04

    申请号：US11700214

    申请日：2007-01-31

    申请人： Keijiro Saito ,  Satoshi Tanimura ,  Atsushi Yuasa ,  Toshihiko Saito

    发明人： Keijiro Saito ,  Satoshi Tanimura ,  Atsushi Yuasa ,  Toshihiko Saito

    IPC分类号： F02C3/00

    CPC分类号： F02C3/14

    摘要： In a combustor, divisional fluid passages of a first group, and divisional fluid passages of a second group are present on an inner peripheral side, and divisional fluid passages are also present on an outer peripheral side, and swirl air flows are gushed from the divisional fluid passages. When the total amount of fuel supplied to the combustor is small as in a speed increasing state or in a low load state, fuel is injected only into the divisional fluid passages of the first group. Since a fuel injection region is limited to a position on the inner peripheral side, particularly, a specific position, the concentration of a fuel gas comprising a mixture of fuel and air is lean, but is higher than a flammability limit concentration, even when the total amount of fuel is small.

    摘要翻译： 在燃烧器中，第一组的分液体通道和第二组的分液通道存在于内周侧，分流体通道也存在于外周侧，并且旋流空气流从分区 流体通道。 当供给到燃烧器的燃料的总量在增速状态或低负载状态下较小时，燃料仅喷射到第一组的分液体通道中。 由于燃料喷射区域被限制在内周侧的位置，特别是特定位置，所以包括燃料和空气的混合物的燃料气体的浓度是稀的，但是高于可燃性极限浓度，即使当 总燃料量很小。

    Semiconductor device
    96.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070120751A1

    公开(公告)日：2007-05-31

    申请号：US11592251

    申请日：2006-11-03

    申请人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

    发明人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

    IPC分类号： H01Q1/24

    CPC分类号： H01Q1/38 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00

    摘要： An object is to reduce troubles during pressure bonding of an antenna in a wireless chip including a thin film. A wireless chip made from a thin film is formed, in particular a wireless chip including a memory area including an organic compound layer, and a distance between the memory area and a pad is a prescribed value or longer. As a result, data writing can be carried out without being affected by stress or heat during pressure bonding of the antenna. For a substrate over which the wireless chip is provided, a glass substrate or a silicon wafer can be used.

    摘要翻译： 目的在于减少包含薄膜的无线芯片中的天线的压接时的麻烦。 形成由薄膜制成的无线芯片，特别是包括包括有机化合物层的存储区域的无线芯片，并且存储区域和焊盘之间的距离是规定值或更长。 因此，可以在天线的压接期间不受应力或热的影响而进行数据写入。 对于提供无线芯片的基板，可以使用玻璃基板或硅晶片。

    Semiconductor device
    98.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20050133605A1

    公开(公告)日：2005-06-23

    申请号：US11005458

    申请日：2004-12-06

    申请人： Jun Koyama ,  Toshihiko Saito

    发明人： Jun Koyama ,  Toshihiko Saito

    IPC分类号： G06K19/06 ,  G06K19/07 ,  G11C16/06 ,  H01L27/02

    CPC分类号： G06K19/0713 ,  G06K19/0723 ,  Y10T307/492

    摘要： The invention provides a circuit which provides a stabilized boosting in the case where a semiconductor device typified by a non-contact ID chip includes a circuit which requires a higher voltage than a logic circuit does. By inputting an alternating signal inputted from an antenna to a charge pump circuit as it is or through a logic circuit, a charge pump can operate with a stabilized frequency that a clock frequency is not affected by a variation of elements and the ambient temperature, thus a stabilized boosting can be provided.

    摘要翻译： 本发明提供一种电路，其在以非接触式ID芯片为代表的半导体器件包括需要比逻辑电路高的电压的电路的情况下提供稳定的升压。 通过从天线输入到电荷泵电路的交替信号或通过逻辑电路输入，电荷泵可以稳定的频率工作，时钟频率不受元件的变化和环境温度的影响，因此 可以提供稳定的增压。

    Semiconductor device, method of manufacturing the same, and method of designing the same
    99.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of designing the same 失效
    半导体装置及其制造方法及其设计方法

    公开(公告)号：US06875998B2

    公开(公告)日：2005-04-05

    申请号：US10395310

    申请日：2003-03-25

    申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

    摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

    摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。