公开(公告)号：US07684781B2

公开(公告)日：2010-03-23

申请号：US11592251

申请日：2006-11-03

申请人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

发明人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

IPC分类号： H04B1/38 ,  H04Q7/20

CPC分类号： H01Q1/38 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00

摘要： An object is to reduce troubles during pressure bonding of an antenna in a wireless chip including a thin film. A wireless chip made from a thin film is formed, in particular a wireless chip including a memory area including an organic compound layer, and a distance between the memory area and a pad is a prescribed value or longer. As a result, data writing can be carried out without being affected by stress or heat during pressure bonding of the antenna. For a substrate over which the wireless chip is provided, a glass substrate or a silicon wafer can be used.

摘要翻译： 目的在于减少包含薄膜的无线芯片中的天线的压接时的麻烦。 形成由薄膜制成的无线芯片，特别是包括包括有机化合物层的存储区域的无线芯片，并且存储区域和焊盘之间的距离是规定值或更长。 因此，可以在天线的压接期间不受应力或热的影响而进行数据写入。 对于提供无线芯片的基板，可以使用玻璃基板或硅晶片。

公开(公告)号：US20070120751A1

公开(公告)日：2007-05-31

申请号：US11592251

申请日：2006-11-03

申请人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

发明人： Toshihiko Saito ,  Kiyoshi Kato ,  Takehisa Sato

IPC分类号： H01Q1/24

CPC分类号： H01Q1/38 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00

摘要： An object is to reduce troubles during pressure bonding of an antenna in a wireless chip including a thin film. A wireless chip made from a thin film is formed, in particular a wireless chip including a memory area including an organic compound layer, and a distance between the memory area and a pad is a prescribed value or longer. As a result, data writing can be carried out without being affected by stress or heat during pressure bonding of the antenna. For a substrate over which the wireless chip is provided, a glass substrate or a silicon wafer can be used.

摘要翻译： 目的在于减少包含薄膜的无线芯片中的天线的压接时的麻烦。 形成由薄膜制成的无线芯片，特别是包括包括有机化合物层的存储区域的无线芯片，并且存储区域和焊盘之间的距离是规定值或更长。 因此，可以在天线的压接期间不受应力或热的影响而进行数据写入。 对于提供无线芯片的基板，可以使用玻璃基板或硅晶片。

公开(公告)号：US07541228B2

公开(公告)日：2009-06-02

申请号：US12003983

申请日：2008-01-04

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/302

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

公开(公告)号：US09123581B2

公开(公告)日：2015-09-01

申请号：US13287569

申请日：2011-11-02

申请人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

IPC分类号： G06K19/06 ,  H01L27/12 ,  G06K19/07 ,  H01L21/84

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。 在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0， 可以以小的电路面积获得将数据写入存储器所必需的。

公开(公告)号：US08809853B2

公开(公告)日：2014-08-19

申请号：US13409316

申请日：2012-03-01

申请人： Toshihiko Saito ,  Kiyoshi Kato ,  Atsuo Isobe

发明人： Toshihiko Saito ,  Kiyoshi Kato ,  Atsuo Isobe

IPC分类号： H01L29/78 ,  H01L29/772

CPC分类号： H01L27/0688 ,  G11C16/0433 ,  H01L21/02565 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L29/408 ,  H01L29/4236 ,  H01L29/78 ,  H01L29/7869 ,  H01L29/78696

摘要： With a combination of a transistor including an oxide semiconductor material and a transistor including a semiconductor material other than an oxide semiconductor, a semiconductor device with a novel structure in which data can be retained for a long time and does not have a limitation on the number of writing can be obtained. When a connection electrode for connecting the transistor including a semiconductor material other than an oxide semiconductor to the transistor including an oxide semiconductor material is smaller than an electrode of the transistor including a semiconductor material other than an oxide semiconductor that is connected to the connection electrode, the semiconductor device with a novel structure can be highly integrated and the storage capacity per unit area can be increased.

摘要翻译： 通过包括氧化物半导体材料的晶体管和包括除了氧化物半导体之外的半导体材料的晶体管的组合，具有可以长时间保持数据并且对数字没有限制的新颖结构的半导体器件 的写作可以获得。 当用于将包括氧化物半导体的半导体材料的晶体管连接到包括氧化物半导体材料的晶体管的连接电极小于包含与连接电极连接的氧化物半导体以外的半导体材料的晶体管的电极时， 具有新颖结构的半导体器件可以高度集成，并且可以增加每单位面积的存储容量。

公开(公告)号：US08421081B2

公开(公告)日：2013-04-16

申请号：US13331645

申请日：2011-12-20

申请人： Kiyoshi Kato ,  Jun Koyama ,  Toshihiko Saito ,  Shunpei Yamazaki

发明人： Kiyoshi Kato ,  Jun Koyama ,  Toshihiko Saito ,  Shunpei Yamazaki

IPC分类号： H01L21/02

CPC分类号： H01L27/1156 ,  G11C11/404 ,  H01L27/1225

摘要： The first transistor includes first and second electrodes which are a source and a drain, and a first gate electrode overlapping with a first channel formation region with an insulating film provided therebetween. The second transistor includes third and fourth electrodes which are a source and a drain, and a second channel formation region which is provided between a second gate electrode and a third gate electrode with insulating films provided between the second channel formation region and the second gate electrode and between the second channel formation region and the third gate electrode. The first and second channel formation regions contain an oxide semiconductor, and the second electrode is connected to the second gate electrode.

摘要翻译： 第一晶体管包括作为源极和漏极的第一和第二电极，以及与第一沟道形成区域重叠的第一栅电极，其间设置有绝缘膜。 第二晶体管包括作为源极和漏极的第三和第四电极以及设置在第二栅电极和第三栅极之间的第二沟道形成区，其中设置在第二沟道形成区和第二栅电极之间的绝缘膜 并且在第二通道形成区域和第三栅电极之间。 第一和第二沟道形成区域包含氧化物半导体，并且第二电极连接到第二栅电极。

公开(公告)号：US20070123189A1

公开(公告)日：2007-05-31

申请号：US11593528

申请日：2006-11-07

申请人： Toshihiko Saito ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Kiyoshi Kato

IPC分类号： H04B7/00

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G06K19/07749 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/79 ,  H01L27/12 ,  H01L27/1214 ,  H01L51/0591

摘要： In an organic memory which is included in a radio chip formed from a thin film, data are written to the organic memory by a signal inputted with a wired connection, and the data is read with a signal by radio transmission. A bit line and a word line which form the organic memory are each selected by a signal which specifies an address generated based on the signal inputted with a wired connection. A voltage is applied to a selected memory element. Thus writing is performed. Reading is performed by a clock signal or the like which are generated from a radio signal.

摘要翻译： 在由薄膜形成的无线电芯片中包括的有机存储器中，通过用有线连接输入的信号将数据写入有机存储器，并且通过无线电传输用信号读取数据。 构成有机存储器的位线和字线各自由指定基于由有线连接输入的信号生成的地址的信号来选择。 电压被施加到选定的存储元件。 因此执行写入。 通过从无线电信号生成的时钟信号等执行读取。

公开(公告)号：US08644048B2

公开(公告)日：2014-02-04

申请号：US13230157

申请日：2011-09-12

申请人： Kiyoshi Kato ,  Toshihiko Saito

发明人： Kiyoshi Kato ,  Toshihiko Saito

IPC分类号： G11C5/06

CPC分类号： G11C7/1078 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1084 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225

摘要： An object of one embodiment of the present invention is to miniaturize a semiconductor device. Another object of one embodiment of the present invention is to reduce the area of a driver circuit of a semiconductor device including a memory element. A plurality of cells in which the positions of input terminals and output terminals are fixed is arranged in a first direction, wirings each of which is electrically connected to the input terminal or the output terminal of each cell are stacked over the plurality of cells, and the wirings extend in the same direction as the first direction in which the cells are arranged; thus, a semiconductor device in which a driver circuit is miniaturized is provided.

摘要翻译： 本发明的一个实施例的目的是使半导体器件小型化。 本发明的一个实施例的另一个目的是减小包括存储元件的半导体器件的驱动电路的面积。 其中固定有输入端子和输出端子的位置的多个单元被布置在第一方向上，电连接到每个单元的输入端子或输出端子的布线堆叠在多个单元上，并且 布线沿与布置电池单元的第一方向相同的方向延伸; 因此，提供了其中驱动电路小型化的半导体器件。

公开(公告)号：US08130191B2

公开(公告)日：2012-03-06

申请号：US12426976

申请日：2009-04-21

申请人： Kiyoshi Kato ,  Toshihiko Saito

发明人： Kiyoshi Kato ,  Toshihiko Saito

IPC分类号： G09G3/36

CPC分类号： G02F1/13338 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/044 ,  G09G3/36 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/13 ,  H01L27/3244 ,  H01L29/78621 ,  H01L29/78645

摘要： A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.

摘要翻译： 可变电容器由一对电极和位于基板之间的电极之间的电介质形成，并且通过用物理或电力改变可变电容器的电容来检测外部输入。 具体地说，在同一衬底上设置可变电容器和读出放大器，读出放大器读取可变电容器的电容变化，并根据输入将信号发送到控制电路。

公开(公告)号：US08052059B2

公开(公告)日：2011-11-08

申请号：US11905504

申请日：2007-10-01

申请人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

IPC分类号： G06K19/06

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。 在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0， 可以以小的电路面积获得将数据写入存储器所必需的。