公开(公告)号：US20220195600A1

公开(公告)日：2022-06-23

申请号：US17129660

申请日：2020-12-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20220165540A1

公开(公告)日：2022-05-26

申请号：US17666906

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

公开(公告)号：US20220152668A1

公开(公告)日：2022-05-19

申请号：US17582100

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Sanjeev Baluja ,  Wei V. Tang

IPC: B08B7/00

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：US20220075396A1

公开(公告)日：2022-03-10

申请号：US17521469

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US20210351060A1

公开(公告)日：2021-11-11

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H01L21/67 ,  G01R27/26 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.

公开(公告)号：US11169547B2

公开(公告)日：2021-11-09

申请号：US16396684

申请日：2019-04-27

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06 ,  G01F25/00

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US11133210B2

公开(公告)日：2021-09-28

申请号：US16443185

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

IPC: H01L21/324 ,  C23C16/458 ,  H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  B05C13/00 ,  H01J37/32

Abstract: A method and apparatus for positioning and heating a substrate in a chamber are provided. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US20210262092A1

公开(公告)日：2021-08-26

申请号：US17186594

申请日：2021-02-26

Applicant: Applied Materials, Inc.

Inventor： Muhammad M. Rasheed ,  Mandyam Sriram ,  Anqing Cui ,  Sanjeev Baluja ,  Kevin Griffin ,  Joseph AuBuchon

IPC: C23C16/455 ,  C23C16/44

Abstract: Gas delivery systems and methods of delivering a process gas are described. The gas delivery system includes an inert gas line and a first reactive gas line connected to a gas line with a purge gas flow. The flows of inert gas and first reactive gas are controlled so that the pressure at the end of the gas line remains substantially constant.

公开(公告)号：US10910238B2

公开(公告)日：2021-02-02

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik Alayavalli ,  Ajit Balakrishna ,  Sanjeev Baluja ,  Amit Kumar Bansal ,  Matthew James Busche ,  Juan Carlos Rocha-Alvarez ,  Swaminathan T. Srinivasan ,  Tejas Ulavi ,  Jianhua Zhou

IPC: H01L21/67 ,  H01L21/687

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

公开(公告)号：US20200256228A1

公开(公告)日：2020-08-13

申请号：US16789796

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Hari Ponnekanti ,  Mario D. Silvetti ,  Kevin Griffin

IPC: F01N1/16 ,  F01N11/00 ,  F01N13/08

Abstract: Exhaust systems for handling multiple effluent streams are described. Some embodiments include pressure drops to prevent perturbations from one effluent source from affecting a second effluent source. Some embodiments incorporate an exhaust assembly with multiple inlets and pumps and a single outlet. The exhaust assembly includes shared auxiliary components like purge and cooling systems.