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公开(公告)号:US10527407B2
公开(公告)日:2020-01-07
申请号:US16356317
申请日:2019-03-18
发明人: Khokan C. Paul , Edward Budiarto , Todd Egan , Mehdi Vaez-Iravani , Jeongmin Lee , Dale R. Du Bois , Terrance Y. Lee
摘要: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
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公开(公告)号:US10518418B2
公开(公告)日:2019-12-31
申请号:US15860102
申请日:2018-01-02
发明人: Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Karthik Janakiraman , Hari K. Ponnekanti , Sanjeev Baluja , Prajeeth Wilton
IPC分类号: H01L21/67 , B25J11/00 , H01L21/677
摘要: The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.
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公开(公告)号:US09889567B2
公开(公告)日:2018-02-13
申请号:US14972366
申请日:2015-12-17
发明人: Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Karthik Janakiraman , Hari K. Ponnekanti , Sanjeev Baluja , Prajeeth Wilton
IPC分类号: H01L21/677 , B25J11/00 , H01L21/67
CPC分类号: B25J11/0095 , H01L21/67196 , H01L21/67742 , H01L21/67748
摘要: The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.
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公开(公告)号:US10774423B2
公开(公告)日:2020-09-15
申请号:US14552273
申请日:2014-11-24
发明人: Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号: C23C16/455 , C23C16/458 , C23C16/44 , C23C16/503 , C23C16/505 , H01J37/32 , C23C16/509
摘要: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
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公开(公告)号:US10720349B2
公开(公告)日:2020-07-21
申请号:US16216526
申请日:2018-12-11
发明人: Dale R. Du Bois , Bozhi Yang , Jianhua Zhou , Sanjeev Baluja , Amit Kumar Bansal , Juan Carlos Rocha-Alvarez
IPC分类号: G01K1/14 , H01L21/67 , H01L21/687 , G01K1/08 , G01K7/02 , G01K7/16 , G01K13/00 , H01L21/683
摘要: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.
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公开(公告)号:US10480077B2
公开(公告)日:2019-11-19
申请号:US14186880
申请日:2014-02-21
IPC分类号: C23C16/509 , C23C16/455 , C23C16/458 , H01J37/32
摘要: Methods and apparatus for forming thin films are described. A semiconductor processing chamber includes a substrate support, an electrode opposite the substrate support, the electrode having a gas inlet in a peripheral region thereof, and an edge ring disposed around a peripheral region of the substrate support, the edge ring having a first barrier and a second barrier, wherein each of the first barrier and the second barrier mates with a recess in the electrode. The edge ring provides a gas flow path through a processing zone between the substrate support and the electrode that is substantially parallel to the upper surface of the substrate support. The electrode may be powered to enhance formation of a film on a substrate.
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公开(公告)号:US20190206706A1
公开(公告)日:2019-07-04
申请号:US16216526
申请日:2018-12-11
发明人: Dale R. Du Bois , Bozhi Yang , Jianhua Zhou , Sanjeev Baluja , Amit Kumar Bansal , Juan Carlos Rocha-Alvarez
IPC分类号: H01L21/67 , H01L21/683
CPC分类号: H01L21/67248 , G01K1/08 , G01K1/14 , G01K7/02 , G01K7/16 , G01K13/00 , H01L21/67017 , H01L21/67103 , H01L21/6838 , H01L21/68742 , H01L21/68792
摘要: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.
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公开(公告)号:US10153185B2
公开(公告)日:2018-12-11
申请号:US14761214
申请日:2014-02-07
发明人: Dale R. Du Bois , Bozhi Yang , Jianhua Zhou , Sanjeev Baluja , Amit Kumar Bansal , Juan Carlos Rocha-Alvarez
摘要: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.
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公开(公告)号:US10570517B2
公开(公告)日:2020-02-25
申请号:US15184675
申请日:2016-06-16
发明人: Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
摘要: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.
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公开(公告)号:US10240234B2
公开(公告)日:2019-03-26
申请号:US15489306
申请日:2017-04-17
IPC分类号: C23C16/455 , C23C16/50 , C23C16/44 , H01L21/02
摘要: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.
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