公开(公告)号：US11600660B2

公开(公告)日：2023-03-07

申请号：US16849571

申请日：2020-04-15

申请人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

发明人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

公开(公告)号：US11545290B2

公开(公告)日：2023-01-03

申请号：US17096554

申请日：2020-11-12

申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

摘要： A magnetoresistive element comprises a novel iPMA cap layer on a surface of a ferromagnetic recording layer. The iPMA cap layer introduces giant interfacial magnetic anisotropy energies (G-iMAE) on the interface between the recording layer and the iPMA cap layer, yielding a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer.

公开(公告)号：US11527708B2

公开(公告)日：2022-12-13

申请号：US16849551

申请日：2020-04-15

申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer.

公开(公告)号：US11257862B2

公开(公告)日：2022-02-22

申请号：US14611083

申请日：2015-01-30

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/14 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08 ,  H01L43/12

摘要： A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

公开(公告)号：US11043631B2

公开(公告)日：2021-06-22

申请号：US16824657

申请日：2020-03-19

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01F41/32 ,  G11C11/16 ,  H01F10/32

摘要： A perpendicular magnetoresistive element includes a novel buffer layer having rocksalt crystal structure interfacing to a CoFeB-based recording tri-layer has (100) plane parallel to the substrate plane and with {110} lattice parameter being slightly larger than the bcc CoFe lattice parameter along {100} direction, and crystallization process of amorphous CoFeB material in the recording layer during thermal annealing leads to form bcc CoFe grains having epitaxial growth with in-plane expansion and out-of-plane contraction. Accordingly, a perpendicular anisotropy, as well as a perpendicular magnetization, is induced in the recording layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications.

公开(公告)号：US10608170B2

公开(公告)日：2020-03-31

申请号：US14159116

申请日：2014-01-20

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/12 ,  H01L27/1159 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

摘要： A perpendicular STT-MRAM comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a recording layer which has an interface interaction with an underneath dielectric functional layer. The energy switch barrier of the recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the perpendicular magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

公开(公告)号：US09362489B1

公开(公告)日：2016-06-07

申请号：US14695286

申请日：2015-04-24

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A method of making a magnetoresistive element comprises making a crystalline structural quality and magnetic anisotropy enhancement bilayer (CSMAE bilayer) thus a). enhancing the crystalline structural quality, hence fabrication yield, of the resulting magnetoresistive element; and b). enhancing the magnetic anisotropy of the recording layer whereby achieving a high MR ratio for the magnetoresistive element with a simultaneous reduction of an undesirable spin pumping effect. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the impurity absorbing layer. Removing the top portion of the impurity absorbing layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin but thermally stable portion of impurity absorbing layer is formed on top of the magnetoresistive element with a low damping constant. Accordingly, a reduced write current can be achieved for spin-transfer torque MRAM application.

摘要翻译： 制造磁阻元件的方法包括制造晶体结构质量和磁各向异性增强双层（CSMAE双层），因此a）。 提高所得磁阻元件的晶体结构质量，从而提高制造成品率; 和b）。 提高记录层的磁各向异性，从而实现磁阻元件的高MR比，同时降低不希望的旋转泵送效应。 当磁阻膜被热退火时，随着硼元素迁移到杂质吸收层，发生结晶过程以形成具有（100）平面平行于隧道势垒层表面的外延生长的bcc CoFe晶粒。 通过溅射蚀刻或RIE蚀刻工艺除去杂质吸收层的顶部部分，然后进行任选的氧化工艺，杂质吸收层的薄而热稳定的部分以低阻尼常数形成在磁阻元件的顶部上。 因此，对于自旋转移扭矩MRAM应用可以实现减小的写入电流。

公开(公告)号：US09287323B2

公开(公告)日：2016-03-15

申请号：US14149757

申请日：2014-01-07

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L27/22 ,  G11C11/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L27/224 ,  G11C11/02 ,  G11C11/161 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

摘要： A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications.

摘要翻译： 垂直磁阻元件包括设置在记录层的与设置有隧道势垒层的记录层的表面相对的表面上的缓冲层，其中至少与记录层相接的缓冲层的部分包含 具有（100）平面平行于衬底平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻小。 本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺。

公开(公告)号：US09099188B2

公开(公告)日：2015-08-04

申请号：US14200003

申请日：2014-03-06

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01F10/32

CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： A STT-MRAM comprises apparatus, and method of operating a double-MTJ magnetoresistive memory and a plurality of magnetoresistive memory element having a first recording layer which has an interface interaction with an underneath dielectric functional layer and having a second recording layer which has no interface interaction with an underneath dielectric functional layer. The energy switch barrier of the first recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the magnetization of the first recording layer is readily reversible in a low spin-transfer switching current while the magnetization of the second recording layer is readily reversible in a high spin-transfer switching current, enabling two separate bits recording in a double MTJ stack.

摘要翻译： STT-MRAM包括装置和操作双MTJ磁阻存储器的方法和具有第一记录层的多个磁阻存储元件，该第一记录层与下介质功能层具有界面相互作用，并具有不具有界面的第二记录层 与下面的介电功能层的相互作用。 在来自控制电路的数字线路上沿着具有适当电压的功能的垂直方向施加的电场下，第一记录层的能量开关势垒减小; 因此，第一记录层的磁化在低自旋转移切换电流中容易可逆，同时第二记录层的磁化在高自旋转移开关电流中容易可逆，使得能够在双MTJ堆叠中记录两个单独的位 。

公开(公告)号：US20150137286A1

公开(公告)日：2015-05-21

申请号：US14289648

申请日：2014-05-29

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A method to form small magnetic random access memory (MRAM) by dual ion implantation is provided. The first ion implantation add oxygen-gettering material surrounding the photo mask opened areas including sidewall followed by oxygen ion implantation to fully oxidize these oxygen-getter implanted areas into an electrically insulating layers to avoid current shunting during memory read/write time, and thus maximizing the tunneling magnetic resistance (TMR) signal. Such method is effective to repair the magnetic dead (weak or non magnetic but electrically conducting) layer on the sidewall.

摘要翻译： 提供了一种通过双离子注入形成小型磁性随机存取存储器（MRAM）的方法。 第一离子注入添加围绕光掩模开放区域的吸氧材料，包括侧壁，随后进行氧离子注入，以将这些吸氧剂注入区域完全氧化成电绝缘层，以避免在存储器读/写时间期间的电流分流，从而最大化 隧道磁阻（TMR）信号。 这种方法有效地修复侧壁上的磁死（弱或非磁性但导电的）层。