公开(公告)号：US06623990B2

公开(公告)日：2003-09-23

申请号：US09899284

申请日：2001-07-06

申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Takamasa Ishii

IPC分类号： H01L2100

CPC分类号： H04N5/32 ,  G02F1/136204 ,  G02F1/136259 ,  G09G3/3648 ,  G09G2330/08

摘要： In order to prevent a decrease of yield due to a discontinuity of a wire or a short between upper and lower metal wires in production of a TFT matrix panel having pixel capacitors and TFTs and produce the TFT panel in a good yield without decrease of an aperture rate of the pixel capacitor portions even with increase in the size of the panel and with micronization of the pixel pattern, ends of bias lines on the opposite side to connection to a common electrode driver for application of bias are electrically connected to each other by a redundant wire.

摘要翻译： 为了防止在具有像素电容器和TFT的TFT矩阵面板的生产中由于导线不连续或上下金属线之间的短路引起的产量降低，并且以不降低孔径的方式制造TFT面板 像素电容器部分的速率即使随着面板尺寸的增加并且像素图案的微小化，与连接到用于施加偏压的公共电极驱动器相反的一侧的偏置线的端部彼此电连接 冗余电线。

公开(公告)号：US06984813B2

公开(公告)日：2006-01-10

申请号：US10957604

申请日：2004-10-05

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L27/00

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nc1−nc2≦1.5, thereby providing a high sensitivity of detecting the radiation.

摘要翻译： 辐射检测装置包括用于将辐射转换成光的波长转换元件，用于将光转换为电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一保护层，以及 形成在所述第一保护层上的第二保护层，其中所述第一和第二保护层的折射率n C 1和n 2 c 2满足关系：n < /SUB>-n_c2<=1.5，从而提供检测辐射的高灵敏度。

公开(公告)号：US06881945B2

公开(公告)日：2005-04-19

申请号：US10856835

申请日：2004-06-01

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L27/00

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： Provided are an imaging apparatus and a radiation detecting apparatus comprising a photoelectric conversion layer for converting an incident light into a charge, an electrode layer formed on the photoelectric conversion layer, first and second protective layers formed on the electrode layer, and a transparent electrode disposed between the electrode layer and the first protective layer, wherein a relation of nc1−nc2≦1.5 is met, where nc1 and nc2 are respectively refractive indices of the first and second protective layers.

摘要翻译： 提供了一种成像装置和放射线检测装置，其包括用于将入射光转换成电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一和第二保护层，以及布置的透明电极 在所述电极层和所述第一保护层之间，其中满足n C 1 -n C 2 <= 1.5的关系，其中n C 1和 n2c2分别是第一和第二保护层的折射率。

公开(公告)号：US20050040319A1

公开(公告)日：2005-02-24

申请号：US10957604

申请日：2004-10-05

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L31/00 ,  H01J40/14

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nci−nc2≦1.5, thereby providing a high sensitivity of detecting the radiation.

摘要翻译： 辐射检测装置包括用于将辐射转换成光的波长转换元件，用于将光转换成电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一保护层，以及 形成在第一保护层上的第二保护层，其中第一和第二保护层的折射率nc1和nc2满足关系：nci-nc2 <= 1.5，由此提供检测辐射的高灵敏度。

公开(公告)号：US06995373B2

公开(公告)日：2006-02-07

申请号：US11071245

申请日：2005-03-04

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L31/062 ,  G01T1/24

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process.A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。

公开(公告)号：US06765187B2

公开(公告)日：2004-07-20

申请号：US10178228

申请日：2002-06-25

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L2700

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： Provided are imaging apparatus and radiation detecting apparatus with high sensitivity. An imaging apparatus has a photoelectric conversion layer 16 for converting incident light into charge, on an insulating substrate, an electrode layer 17 formed on the photoelectric conversion layer 16, and a protective layer 37 formed on the electrode layer 17, and satisfies relations of na−nb≦1.5 and nb−nc≦1.5 where na is a refractive index of the photoelectric conversion layer 16, nb a refractive index of the electrode layer 17, and nc a refractive index of the protective layer 37.

摘要翻译： 提供了具有高灵敏度的成像装置和放射线检测装置。 成像装置具有用于将入射光转换成电荷的光电转换层16，绝缘基板上形成的电极层17和形成在电极层17上的保护层37，并且满足关系na -nb <= 1.5和Nb-nc <= 1.5其中Na是光电转换层16的折射率，nb是电极​​层17的折射率，nc是保护层37的折射率。

公开(公告)号：US06956216B2

公开(公告)日：2005-10-18

申请号：US09879214

申请日：2001-06-13

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L27/146 ,  H01L27/14 ,  G01T1/24

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process.A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。 栅极线Vg4和Vg冗余布线是电绝缘的，并且被布置成形成上下线的交叉点G. 由于Vg冗余布线Y与Sig线同时形成，所以不需要额外的制造步骤来形成Vg冗余布线Y.如果在栅极线Vg4中发生断线，则栅极线Vg4和Vg冗余 通过用激光照射交叉G，将布线Y彼此电连接。 因此，栅极驱动脉冲也通过Vg冗余布线Y施加到虚线上的薄膜晶体管。因此，可以防止由于栅极线Vg4的断裂而导致的成品率的任何降低，而孔径没有任何降低 光电转换元件的比例。

公开(公告)号：US20050145903A1

公开(公告)日：2005-07-07

申请号：US11071245

申请日：2005-03-04

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L27/146 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。 栅极线Vg4和Vg冗余布线是电绝缘的，并且被布置成形成上下线的交叉点G. 由于Vg冗余布线Y与Sig线同时形成，所以不需要额外的制造步骤来形成Vg冗余布线Y.如果在栅极线Vg4中发生断线，则栅极线Vg4和Vg冗余布线Y 通过用激光照射交叉点G而彼此电连接。 因此，栅极驱动脉冲也通过Vg冗余布线Y施加到虚线上的薄膜晶体管。因此，可以防止由于栅极线Vg4的断裂而导致的成品率的任何降低，而孔径比 用于光电转换元件。

公开(公告)号：US20080128630A1

公开(公告)日：2008-06-05

申请号：US11723462

申请日：2007-03-20

申请人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： G01J1/00 ,  H01L31/119 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14676 ,  H01L27/14692

摘要： The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including: a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including: a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.

摘要翻译： 本发明提供一种具有层叠在开关TFT上的辐射转换元件的放射线检测装置，包括：开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，依次层叠在栅电极上; 以及层叠在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT; 和辐射转换元件的下电极，其形成在与源/漏电极相同的层上; 第二绝缘层，第二半导体层和第二欧姆接触层，它们依次层压在下电极上; 以及用于向辐射转换元件施加偏压的偏置布线。 另外，本发明提供了一种放射线摄像装置，其特征在于，包括：光电转换元件，具有将辐射转换为可见光的波长转换器，将可见光转换为电信号的像素电极，绝缘层和半导体层 ; 以及晶体管，用于控制由所述光电转换元件转换的电信号的读取，所述光电转换元件层叠在所述晶体管的波长转换器侧，所述像素电极被分割为多个像素，并且所述半导体层延伸越过 多个像素。

公开(公告)号：US07521684B2

公开(公告)日：2009-04-21

申请号：US11723462

申请日：2007-03-20

申请人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： G01J1/00

CPC分类号： H01L27/14609 ,  H01L27/14676 ,  H01L27/14692

摘要： The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.

摘要翻译： 本发明提供一种放射线检测装置，具有叠层在开关TFT上的辐射转换元件，包括开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，依次层叠在栅电极上; 以及层叠在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT; 和辐射转换元件的下电极，其形成在与源/漏电极相同的层上; 第二绝缘层，第二半导体层和第二欧姆接触层，它们依次层压在下电极上; 以及用于向辐射转换元件施加偏压的偏置布线。 另外，本发明提供了一种包括具有将辐射转换为可见光的波长转换器的光电转换元件，将可见光转换为电信号的像素电极，绝缘层和半导体层的放射线摄像装置; 以及晶体管，用于控制由所述光电转换元件转换的电信号的读取，所述光电转换元件层叠在所述晶体管的波长转换器侧，所述像素电极被分割为多个像素，并且所述半导体层延伸越过 多个像素。