公开(公告)号：US06881945B2

公开(公告)日：2005-04-19

申请号：US10856835

申请日：2004-06-01

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L27/00

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： Provided are an imaging apparatus and a radiation detecting apparatus comprising a photoelectric conversion layer for converting an incident light into a charge, an electrode layer formed on the photoelectric conversion layer, first and second protective layers formed on the electrode layer, and a transparent electrode disposed between the electrode layer and the first protective layer, wherein a relation of nc1−nc2≦1.5 is met, where nc1 and nc2 are respectively refractive indices of the first and second protective layers.

摘要翻译： 提供了一种成像装置和放射线检测装置，其包括用于将入射光转换成电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一和第二保护层，以及布置的透明电极 在所述电极层和所述第一保护层之间，其中满足n C 1 -n C 2 <= 1.5的关系，其中n C 1和 n2c2分别是第一和第二保护层的折射率。

公开(公告)号：US20050040319A1

公开(公告)日：2005-02-24

申请号：US10957604

申请日：2004-10-05

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L31/00 ,  H01J40/14

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nci−nc2≦1.5, thereby providing a high sensitivity of detecting the radiation.

摘要翻译： 辐射检测装置包括用于将辐射转换成光的波长转换元件，用于将光转换成电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一保护层，以及 形成在第一保护层上的第二保护层，其中第一和第二保护层的折射率nc1和nc2满足关系：nci-nc2 <= 1.5，由此提供检测辐射的高灵敏度。

公开(公告)号：US06956216B2

公开(公告)日：2005-10-18

申请号：US09879214

申请日：2001-06-13

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L27/146 ,  H01L27/14 ,  G01T1/24

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process.A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。 栅极线Vg4和Vg冗余布线是电绝缘的，并且被布置成形成上下线的交叉点G. 由于Vg冗余布线Y与Sig线同时形成，所以不需要额外的制造步骤来形成Vg冗余布线Y.如果在栅极线Vg4中发生断线，则栅极线Vg4和Vg冗余 通过用激光照射交叉G，将布线Y彼此电连接。 因此，栅极驱动脉冲也通过Vg冗余布线Y施加到虚线上的薄膜晶体管。因此，可以防止由于栅极线Vg4的断裂而导致的成品率的任何降低，而孔径没有任何降低 光电转换元件的比例。

公开(公告)号：US20050145903A1

公开(公告)日：2005-07-07

申请号：US11071245

申请日：2005-03-04

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L27/146 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process. A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。 栅极线Vg4和Vg冗余布线是电绝缘的，并且被布置成形成上下线的交叉点G. 由于Vg冗余布线Y与Sig线同时形成，所以不需要额外的制造步骤来形成Vg冗余布线Y.如果在栅极线Vg4中发生断线，则栅极线Vg4和Vg冗余布线Y 通过用激光照射交叉点G而彼此电连接。 因此，栅极驱动脉冲也通过Vg冗余布线Y施加到虚线上的薄膜晶体管。因此，可以防止由于栅极线Vg4的断裂而导致的成品率的任何降低，而孔径比 用于光电转换元件。

公开(公告)号：US06995373B2

公开(公告)日：2006-02-07

申请号：US11071245

申请日：2005-03-04

申请人： Takamasa Ishii ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Chiori Mochizuki

IPC分类号： H01L31/062 ,  G01T1/24

CPC分类号： H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process.A gate line Vg4 and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4 and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4 can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.

摘要翻译： 通过形成额外布线的冗余电路，伴随着光电转换元件的开口率不降低，防止了在面板制造过程中由于断线而导致的收率降低。

公开(公告)号：US06765187B2

公开(公告)日：2004-07-20

申请号：US10178228

申请日：2002-06-25

申请人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

发明人： Takamasa Ishii ,  Masakazu Morishita ,  Chiori Mochizuki

IPC分类号： H01L2700

CPC分类号： H01L27/14663 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02161 ,  H01L31/02322

摘要： Provided are imaging apparatus and radiation detecting apparatus with high sensitivity. An imaging apparatus has a photoelectric conversion layer 16 for converting incident light into charge, on an insulating substrate, an electrode layer 17 formed on the photoelectric conversion layer 16, and a protective layer 37 formed on the electrode layer 17, and satisfies relations of na−nb≦1.5 and nb−nc≦1.5 where na is a refractive index of the photoelectric conversion layer 16, nb a refractive index of the electrode layer 17, and nc a refractive index of the protective layer 37.

摘要翻译： 提供了具有高灵敏度的成像装置和放射线检测装置。 成像装置具有用于将入射光转换成电荷的光电转换层16，绝缘基板上形成的电极层17和形成在电极层17上的保护层37，并且满足关系na -nb <= 1.5和Nb-nc <= 1.5其中Na是光电转换层16的折射率，nb是电极​​层17的折射率，nc是保护层37的折射率。

公开(公告)号：US07148487B2

公开(公告)日：2006-12-12

申请号：US10648916

申请日：2003-08-27

申请人： Takamasa Ishii ,  Minoru Watanabe

发明人： Takamasa Ishii ,  Minoru Watanabe

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  G01T1/026 ,  G01T1/24

摘要： This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.

摘要翻译： 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点，在绝缘基板（11）上形成读取TFT（1）。 MIS光电转换元件（2）的半导体层（19）和n + + - 半导体层（20）形成在覆盖读取的TFT（1）的第二绝缘层（18）上 与用作下电极的源极和漏极（16）对准。 当从上侧观察时，TFT传感器（3）的半导体层（21）形成为与栅电极（17）对齐。 半导体层（19,21）由相同的层形成。 MIS光电转换元件（2）的上电极（22）形成在n + + - 半导体层（20）上。 在半导体层（21）上形成有两个欧姆接触层（23）。 源极和漏极（24）分别形成在两个欧姆接触层（23）上。

公开(公告)号：US07271392B2

公开(公告)日：2007-09-18

申请号：US11428837

申请日：2006-07-06

申请人： Takamasa Ishii ,  Minoru Watanabe

发明人： Takamasa Ishii ,  Minoru Watanabe

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  G01T1/026 ,  G01T1/24

摘要： This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.

摘要翻译： 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点，在绝缘基板（11）上形成读取TFT（1）。 MIS光电转换元件（2）的半导体层（19）和n + + - 半导体层（20）形成在覆盖读取的TFT（1）的第二绝缘层（18）上 与用作下电极的源极和漏极（16）对准。 当从上侧观察时，TFT传感器（3）的半导体层（21）形成为与栅电极（17）对齐。 半导体层（19,21）由相同的层形成。 MIS光电转换元件（2）的上电极（22）形成在n + + - 半导体层（20）上。 在半导体层（21）上形成有两个欧姆接触层（23）。 源极和漏极（24）分别形成在两个欧姆接触层（23）上。

公开(公告)号：US07408169B2

公开(公告)日：2008-08-05

申请号：US11428839

申请日：2006-07-06

申请人： Takamasa Ishii ,  Minoru Watanabe

发明人： Takamasa Ishii ,  Minoru Watanabe

IPC分类号： G01T1/24 ,  H01L25/00

CPC分类号： G01T1/2928 ,  G01T1/026 ,  G01T1/24

摘要： This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.

摘要翻译： 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点，在绝缘基板（11）上形成读取TFT（1）。 MIS光电转换元件（2）的半导体层（19）和n + + - 半导体层（20）形成在覆盖读取的TFT（1）的第二绝缘层（18）上 与用作下电极的源极和漏极（16）对准。 当从上侧观察时，TFT传感器（3）的半导体层（21）形成为与栅电极（17）对齐。 半导体层（19,21）由相同的层形成。 MIS光电转换元件（2）的上电极（22）形成在n + + - 半导体层（20）上。 在半导体层（21）上形成有两个欧姆接触层（23）。 源极和漏极（24）分别形成在两个欧姆接触层（23）上。

公开(公告)号：US07231018B2

公开(公告)日：2007-06-12

申请号：US11245256

申请日：2005-10-07

申请人： Toshiko Morii ,  Masakazu Morishita ,  Osamu Tsujii ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Toshiko Morii ,  Masakazu Morishita ,  Osamu Tsujii ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H05G1/42 ,  H05G1/64

CPC分类号： G01T1/2018 ,  H01L27/14658 ,  H01L27/14663

摘要： According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

摘要翻译： 根据辐射成像装置，不需要准备任何单独的AEC传感器。 另外，可以使装置主体紧凑。 为了实现这一点，辐射成像装置具有将入射辐射转换为电信号的第一光转换元件，并且基于从第一光转换元件输出的电信号生成图像信息。 在与第一光转换元件之间的间隙对准的部分下面，形成多个第二光转换元件，其检测来自间隙的辐射的入射量。 基于第二光转换元件的检测结果来进行光转换元件的放射或控制的曝光控制。