公开(公告)号：US07816994B2

公开(公告)日：2010-10-19

申请号：US12260001

申请日：2008-10-28

申请人： Stefan Maat

发明人： Stefan Maat

IPC分类号： H01P1/387 ,  H01P1/38

CPC分类号： H01P1/387

摘要： A microwave circulator uses a thin-film exchange-coupled structure to provide an in-plane magnetic field around the circulator. The exchange-coupled structure is a ferromagnetic layer having an in-plane magnetization oriented generally around the circulator and an antiferromagnetic layer exchange-coupled with the ferromagnetic layer that provides an exchange-bias field to the ferromagnetic layer. A plurality of electrically conductive ports are connected to the exchange-coupled structure. Each of the portions or legs of the circulator between the ports may have an electrical coil wrapped around it with each coil connected to an electrical current source. The ferromagnetic resonance (FMR) frequency of the exchange-coupled structure in the absence of an external magnetic field is determined by the properties of the material of ferromagnetic layer and the magnitude of the exchange-bias field due to the exchange-coupling of the ferromagnetic layer to the antiferromagnetic layer. If one or more of the optional coils is used, then the FMR frequency can be tuned by changing the current in the coil or coils to change the magnitude of the externally applied magnetic field.

摘要翻译： 微波循环器使用薄膜交换耦合结构来在循环器周围提供平面内的磁场。 交换耦合结构是具有通常围绕循环器定向的面内磁化的铁磁层和与铁磁层交换耦合的反铁磁层，其向铁磁层提供交换偏置场。 多个导电端口连接到交换耦合结构。 端口之间的循环器的每个部分或腿部可以具有缠绕在其上的电线圈，每个线圈连接到电流源。 在没有外部磁场的情况下，交换耦合结构的铁磁共振（FMR）频率由铁磁层的材料的特性和由于铁磁性层的交换耦合而导致的交换偏置场的大小决定 层到反铁磁层。 如果使用一个或多个可选的线圈，则可以通过改变线圈或线圈中的电流来改变FMR频率，以改变外部施加的磁场的大小。

公开(公告)号：US20100102896A1

公开(公告)日：2010-04-29

申请号：US12260001

申请日：2008-10-28

申请人： Stefan Maat

发明人： Stefan Maat

IPC分类号： H01P1/38

CPC分类号： H01P1/387

摘要： A microwave circulator uses a thin-film exchange-coupled structure to provide an in-plane magnetic field around the circulator. The exchange-coupled structure is a ferromagnetic layer having an in-plane magnetization oriented generally around the circulator and an antiferromagnetic layer exchange-coupled with the ferromagnetic layer that provides an exchange-bias field to the ferromagnetic layer. A plurality of electrically conductive ports are connected to the exchange-coupled structure. Each of the portions or legs of the circulator between the ports may have an electrical coil wrapped around it with each coil connected to an electrical current source. The ferromagnetic resonance (FMR) frequency of the exchange-coupled structure in the absence of an external magnetic field is determined by the properties of the material of ferromagnetic layer and the magnitude of the exchange-bias field due to the exchange-coupling of the ferromagnetic layer to the antiferromagnetic layer. If one or more of the optional coils is used, then the FMR frequency can be tuned by changing the current in the coil or coils to change the magnitude of the externally applied magnetic field.

摘要翻译： 微波循环器使用薄膜交换耦合结构来在循环器周围提供平面内的磁场。 交换耦合结构是具有通常围绕循环器定向的面内磁化的铁磁层和与铁磁层交换耦合的反铁磁层，其向铁磁层提供交换偏置场。 多个导电端口连接到交换耦合结构。 端口之间的循环器的每个部分或腿部可以具有缠绕在其上的电线圈，每个线圈连接到电流源。 在没有外部磁场的情况下，交换耦合结构的铁磁共振（FMR）频率由铁磁层的材料的特性和由于铁磁性层的交换耦合而导致的交换偏置场的大小决定 层到反铁磁层。 如果使用一个或多个可选的线圈，则可以通过改变线圈或线圈中的电流来改变FMR频率，以改变外部施加的磁场的大小。

公开(公告)号：US20100033881A1

公开(公告)日：2010-02-11

申请号：US12188183

申请日：2008-08-07

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3286 ,  H03B15/006

摘要： A magnetic field sensing system with a current-perpendicular-to-the-plane (CPP) sensor, like that used for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) spin-valve (SV) sensors, operates in a mode different from conventional GMR-SV and TMR-SV systems. An alternating-current (AC) source operates at a fixed selected frequency and directs AC perpendicularly through the layers of the CPP sensor, with the AC amplitude being high enough to deliberately induce a spin-torque in the CPP sensor's free layer. The AC-induced spin-torque at the selected frequency causes oscillations in the magnetization of the free layer that give rise to a DC voltage signal VDC. VDC is a direct result of only the oscillations induced in the free layer. The value of VDC will change in response to the magnitude of the external magnetic field being sensed and as the free layer is driven in and out of resonance with the AC. The DC voltage resulting from AC-induced spin-torque oscillations of the free layer magnetization represents the actual magnetoresistive signal.

摘要翻译： 与用于巨磁阻（GMR）和隧道磁阻（TMR）自旋阀（SV）传感器的电流 - 垂直平面（CPP）传感器的磁场感测系统以不同于 常规GMR-SV和TMR-SV系统。 交流（AC）源以固定的选定频率工作，并直接通过CPP传感器的层引导AC，AC振幅足够高以故意诱导CPP传感器自由层中的自旋扭矩。 所选频率下的交流感应自旋转矩引起自由层的磁化振动，产生直流电压信号VDC。 VDC是仅在自由层中引起的振荡的直接结果。 VDC的值将响应于被感测的外部磁场的大小而变化，并且自由层被驱动进入和退出与AC谐振。 由自由层磁化的交流感应自旋转矩振荡产生的直流电压表示实际磁阻信号。

公开(公告)号：US07633718B2

公开(公告)日：2009-12-15

申请号：US11168070

申请日：2005-06-27

申请人： Robert E. Fontana, Jr. ,  Stefan Maat

发明人： Robert E. Fontana, Jr. ,  Stefan Maat

IPC分类号： G11B5/48 ,  G11B21/16 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  G11C11/14 ,  H01L43/12

摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.

摘要翻译： 公开了EMR元件和制造EMR元件的方法。 EMR结构包括形成有源区的一个或多个层，例如二维电子气（2DEG）。 EMR结构具有第一侧表面，具有从EMR结构的主体向外延伸的多个引线突起和相对的第二侧表面。 引线突起用于形成EMR元件的电流和电压引线。 有源区域延伸穿过每个引线突起，并且可沿着每个引线突起的周边被接近。 沿着每个引线突起的周边形成导电材料，并沿周边与EMR结构的有源区接触。 引线突起和与每个引线突起的有源区接触的相应的导电材料形成用于EMR元件的引线，例如电流引线和电压引线。

公开(公告)号：US20090091864A1

公开(公告)日：2009-04-09

申请号：US11867063

申请日：2007-10-04

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08

摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.

摘要翻译： 电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金 并且可选地在CPP-SV传感器的自由层中。 参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层 与CPP-SV传感器的间隔层接触。 含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。

公开(公告)号：US07466521B2

公开(公告)日：2008-12-16

申请号：US11411606

申请日：2006-04-25

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

摘要翻译： 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

公开(公告)号：US20080019055A1

公开(公告)日：2008-01-24

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Emesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Emesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US20070133132A1

公开(公告)日：2007-06-14

申请号：US11304033

申请日：2005-12-14

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/3163

摘要： A magnetoresistive sensor having a magnetic anisotropy induced in one or both of the free layer and/or pinned layer. The magnetic anisotropy is induced by a surface texture formed in the surface of the magnetic layer of either or both of the free layer or pinned layer. The surface texture is formed by a direct, angled ion mill performed on the surface of the magnetic layer while holding the wafer on a stationary chuck. By applying this ion milling technique, the magnetic anisotropy of the pinned layer can be formed in a first direction (eg. perpendicular to the ABS) while the magnetic anisotropy of the free layer can be formed perpendicular to that of the pinned layer (eg. parallel to the ABS).

摘要翻译： 具有在自由层和/或固定层中的一个或两个中诱发的磁各向异性的磁阻传感器。 磁各向异性由在自由层或被钉扎层中的任一个或两者的磁性层表面形成的表面纹理引起。 表面纹理由在磁性层的表面上执行的直接成角度的离子磨机形成，同时将晶片保持在固定的卡盘上。 通过应用这种离子铣削技术，可以沿着第一方向（例如垂直于ABS）形成钉扎层的磁各向异性，同时自由层的磁各向异性可以垂直于被钉扎层的形状形成（例如， 平行于ABS）。

公开(公告)号：US20070109692A1

公开(公告)日：2007-05-17

申请号：US11283033

申请日：2005-11-17

申请人： Matthew Carey ,  Jeffrey Childress ,  James Freitag ,  Stefan Maat ,  Mustafa Pinarbasi

发明人： Matthew Carey ,  Jeffrey Childress ,  James Freitag ,  Stefan Maat ,  Mustafa Pinarbasi

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.

摘要翻译： 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

公开(公告)号：US20070097558A1

公开(公告)日：2007-05-03

申请号：US11268275

申请日：2005-11-03

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906

摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active region. The apertures are located closer to the sensing edge of the sensor than to the back edge of the sensor. The aperture (or apertures) are patterned by e-beam lithography, which enables the number, size and location of the apertures to be precisely controlled. The insulating layer may be located inside the electrically conductive nonmagnetic spacer layer, or outside of the magnetically active layers of the spin-valve. More than one insulating layer may be included in the stack to define conductive current paths where the apertures of the insulating layers overlap. The apertures are filled with electrically conductive material, typically the same material as that used for the spacer layer.

摘要翻译： 电流 - 垂直于平面的自旋阀（CPP-SV）磁阻传感器具有绝缘层，其具有至少一个限制感应电流通过有源区域的孔径。 孔比传感器的后边缘更靠近传感器的感测边缘。 孔（或孔）通过电子束光刻被图案化，这使得能够精确地控制孔的数量，尺寸和位置。 绝缘层可以位于导电非磁性间隔层内部，或位于自旋阀的磁性有效层的外部。 堆叠中可以包括多于一个绝缘层，以限定绝缘层的孔重叠的导电电流路径。 孔被填充有导电材料，通常与用于间隔层的材料相同。