公开(公告)号：US20060011126A1

公开(公告)日：2006-01-19

申请号：US10535105

申请日：2004-04-20

申请人： Soshu Kirihara ,  Yoshinari Miyamoto ,  Takuji Nakagawa ,  Katsuhiko Tanaka

发明人： Soshu Kirihara ,  Yoshinari Miyamoto ,  Takuji Nakagawa ,  Katsuhiko Tanaka

IPC分类号： H01L21/322

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  C30B29/60

摘要： Photonic crystal units (10a, 10b, and 10c) are formed by an optical molding process using a photocurable resin, and partitions (11) are provided at the boundaries therebetween. The voids in each photonic crystal unit are filled with a second substance containing ceramic particles dispersed therein to form a filled portion 2. A plurality of three-dimensional periodic structure units containing the first and second substances distributed with three-dimensional periodicity are arranged so as to have different ratios between the dielectric constants of the first and second substances. Therefore, present invention provides a three-dimensional periodic structure having a wide photonic band gap which could not be obtained in a conventional three-dimensional periodic structure.

摘要翻译： 光子晶体单元（10a，10b和10b）通过使用光固化树脂的光学模制工艺形成，并且在它们之间的边界处设置有隔板（11）。 每个光子晶体单元中的空隙填充有分散在其中的含有陶瓷颗粒的第二物质以形成填充部分2。 以包含第一和第二物质的三维周期性分布的多个三维周期结构单元被布置成在第一和第二物质的介电常数之间具有不同的比率。 因此，本发明提供了在常规三维周期结构中不能获得的具有宽光子带隙的三维周期结构。

公开(公告)号：US20050040452A1

公开(公告)日：2005-02-24

申请号：US10959634

申请日：2004-10-07

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L21/8242 ,  H01L23/522 ,  H01L29/76

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

公开(公告)号：US06492730B1

公开(公告)日：2002-12-10

申请号：US09480480

申请日：2000-01-11

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L2348

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

摘要翻译： 根据以下步骤形成半导体器件。 通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀 仅留下通孔66的内部并形成插头73.然后，将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，通过 溅射法，然后对Ti膜76，Al合金膜75和TiN膜74进行图案化以形成第二层布线77和78。

公开(公告)号：US06264368B1

公开(公告)日：2001-07-24

申请号：US09333954

申请日：1999-06-16

申请人： Katsuhiko Tanaka ,  Ikunori Sakatani ,  Kazuhiro Uemura

发明人： Katsuhiko Tanaka ,  Ikunori Sakatani ,  Kazuhiro Uemura

IPC分类号： F16C3206

CPC分类号： F16C33/103 ,  F16C33/10 ,  F16C2370/12 ,  G11B19/2009

摘要： A fluid bearing motor having sufficient room for securing an air chamber for use in quickly discharging bubbles that have entered a thrust fluid bearing and a reservoir for supplying a lubricating fluid to the thrust fluid bearing. Moreover, the fluid bearing motor can easily be fabricated. The fluid bearing motor includes a shaft member 1, a sleeve 2 cooperating with the shaft member and a thrust collar 3 which is fixed to the shaft member 1 and extended in the diametric direction. The circumferentially-directed contour of the outer peripheral face of the thrust collar 3 is made elliptic, so that a reservoir 8 and an air chamber 9 are formed between the outer peripheral face of the thrust collar 3 and the face 4a of the mating member (sleeve).

摘要翻译： 流体轴承马达具有足够的空间，用于固定用于快速排放进入推力流体轴承的气泡的空气室和用于向推力流体轴承供应润滑流体的储存器。 此外，可以容易地制造流体轴承马达。 流体轴承电动机包括轴构件1，与轴构件配合的套筒2和固定到轴构件1并沿直径方向延伸的止推环3。 止推环3的外周面的周向定向轮廓被制成椭圆形，从而在止推环3的外周面与配合构件的表面4a之间形成储存器8和空气室9（ 袖）。

公开(公告)号：US06252601B1

公开(公告)日：2001-06-26

申请号：US09157369

申请日：1998-09-21

申请人： Katsuhiko Tanaka

发明人： Katsuhiko Tanaka

IPC分类号： G06T1500

CPC分类号： G06T17/20

摘要： In a method of generating a three-dimensional Delaunay tetrahedral mesh, failure to generate the tetrahedral mesh can be avoided through use of a simple algorithm not accompanied by correction of the tetrahedral mesh. The advancing front method of giving grid points in advance is employed as the basic algorithm. First a triangular mesh is generated on the surface of an analytic domain and the analytic domain is filled in by successively extracting tetrahedral elements having each triangular surface of the triangular mesh as a side face thereof. In order to avoid occurrence of a polyhedral area that cannot be partitioned into tetrahedral elements at this time, triangular surfaces which may possibly give rise to a polyhedron that cannot be partitioned into tetrahedral elements are temporarily stored and processing deferred. Even if a state exists in which six or more grid points lie on the surface of a sphere that does not internally enclose a grid point, the interior of this convex hull domain is tetrahedralized consistently.

摘要翻译： 在生成三维Delaunay四面体网格的方法中，通过使用不伴随四面体网格校正的简单算法，可以避免产生四面体网格的失败。 作为基本算法，采用预先提供网格点的前进方法。 首先，在分析域的表面上产生三角网格，并且通过连续提取具有三角形网格的每个三角形表面的四面体单元作为其侧面来填充分析域。 为了避免此时不能分割成四面体元素的多面体区域，暂时存储可能产生不能划分为四面体元素的多面体的三角形表面，延迟处理。 即使存在其中六个或更多个网格点位于不内部包围网格点的球体的表面上的状态，该凸包域的内部一致地四面体化。

公开(公告)号：US06172847B2

公开(公告)日：2001-01-09

申请号：US09049005

申请日：1998-03-27

申请人： Ikunori Sakatani ,  Katsuhiko Tanaka ,  Hiromitsu Muraki ,  Etsuo Maeda ,  Hideo Okano ,  Kazuhiro Uemura

发明人： Ikunori Sakatani ,  Katsuhiko Tanaka ,  Hiromitsu Muraki ,  Etsuo Maeda ,  Hideo Okano ,  Kazuhiro Uemura

IPC分类号： G11B1702

CPC分类号： F16C17/102 ,  F16C25/045 ,  F16C32/0402 ,  F16C2370/12 ,  G11B19/2009 ,  G11B25/043

摘要： A disc drive device includes a rotational assembly which is adapted to mount a disc thereon and is rotatably driven by a motor. The rotational assembly is rotatably supported on a support assembly by a radial hydrodynamic fluid bearing and a thrust bearing. An axial load is applied to the thrust bearing by a magnetic attractive force of up to 30N and is greater than a dead weight of the rotational assembly.

摘要翻译： 盘驱动装置包括旋转组件，其适于在其上安装盘并由马达可旋转地驱动。 旋转组件通过径向流体动力流体轴承和推力轴承可旋转地支撑在支撑组件上。 通过高达30N的磁吸引力将轴向载荷施加到推力轴承，并且大于旋转组件的自重。

公开(公告)号：US6081057A

公开(公告)日：2000-06-27

申请号：US349905

申请日：1999-07-08

申请人： Katsuhiko Tanaka ,  Ikunori Sakatani ,  Hiromitsu Muraki ,  Shoji Moguchi

发明人： Katsuhiko Tanaka ,  Ikunori Sakatani ,  Hiromitsu Muraki ,  Shoji Moguchi

IPC分类号： F16C21/00 ,  F16C13/02 ,  G11B19/20 ,  H02K5/167 ,  H02K5/173 ,  H02K29/00 ,  H02K5/16

CPC分类号： F16C21/00 ,  F16C25/086 ,  H02K5/1737 ,  F16C17/026 ,  F16C19/06 ,  F16C2370/12

摘要： In a spindle motor for a disc drive in which a rotatable body having a disc mounted thereon is rotatively driven by a motor, the rotatable body is rotatably supported on a support member through a ball bearing and a hydrodynamic fluid bearing, and a preload equal to or greater than an axial load of 1N is imparted to the ball bearing.

摘要翻译： 在其中具有安装在其上的盘的旋转主体由电动机旋转驱动的盘驱动器的主轴电机中，可旋转体通过球轴承和流体动力流体轴承可旋转地支撑在支撑构件上，并且预压力等于 或大于1N的轴向载荷。

公开(公告)号：US6052043A

公开(公告)日：2000-04-18

申请号：US176504

申请日：1998-10-21

申请人： Yoshihiko Gotoh ,  Masato Kobayashi ,  Katsuhiko Tanaka

发明人： Yoshihiko Gotoh ,  Masato Kobayashi ,  Katsuhiko Tanaka

IPC分类号： H01P3/08 ,  H01P3/18 ,  H01P1/203 ,  H01P7/08

CPC分类号： H01P3/18 ,  H01P3/081

摘要： A thin-film multilayered electrode has a dielectric substrate; a ground conductor provided on a back surface of the dielectric substrate; and a plurality of thin-film conductive layers and dielectric layers alternately stacked on a front surface of the dielectric substrate. In one example, the ground conductor, one of the thin-film conductive layers in contact with the dielectric substrate and the dielectric substrate interposed therebetween form a TEM mode principal transmission line, and each thin-film dielectric layer and a pair of thin-film conductive layers sandwiching the thin-film dielectric layer form a TEM mode sub-transmission line. A thickness and a dielectric constant of each thin-film dielectric layer is set such that phase velocities of TEM waves which propagate through the TEM mode principal transmission line and the TEM mode sub-transmission lines are substantially identical with each other. A thickness of each thin-film conductive layer is set at a predetermined value which is smaller than a skin depth at a predetermined operating frequency such that electromagnetic fields between the TEM mode principal transmission line and its adjacent TEM mode sub-transmission line, and between each adjacent pair of TEM mode sub-transmission lines, are coupled with each other. At least one of the thin-film dielectric layers which is closest to the dielectric substrate has a thickness greater than that of the other thin-film dielectric layers.

摘要翻译： 薄膜多层电极具有电介质基板; 设置在电介质基板的背面的接地导体; 以及交替层叠在电介质基板的前表面上的多个薄膜导电层和电介质层。 在一个示例中，接地导体，与电介质基板接触的薄膜导电层之一和介于其间的电介质基板形成TEM模式主传输线，并且每个薄膜电介质层和一对薄膜 夹持薄膜电介质层的导电层形成TEM模式子传输线。 设定各薄膜电介质层的厚度和介电常数，使得通过TEM模式主传输线和TEM模式子传输线传播的TEM波的相速度彼此基本相同。 每个薄膜导​​电层的厚度设定在比预定工作频率小的趋肤深度的预定值，使得TEM模式主传输线与其相邻的TEM模式子传输线之间的电磁场以及 每个相邻的TEM模式子传输线对彼此耦合。 最靠近电介质基板的薄膜电介质层中的至少一个的厚度大于其它薄膜电介质层的厚度。

公开(公告)号：US6028360A

公开(公告)日：2000-02-22

申请号：US106074

申请日：1998-06-29

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L21/8242 ,  H01L23/522 ,  H01L23/48 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

摘要翻译： 根据以下步骤形成半导体器件。 通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀 仅留下通孔66的内部并形成插头73.然后，将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，通过 溅射法，然后对Ti膜76，Al合金膜75和TiN膜74进行图案化以形成第二层布线77和78。

公开(公告)号：US5998765A

公开(公告)日：1999-12-07

申请号：US972544

申请日：1997-11-18

申请人： Takanori Mizuno ,  Katsuhiko Tanaka

发明人： Takanori Mizuno ,  Katsuhiko Tanaka

IPC分类号： F23Q7/00 ,  F23Q7/22

CPC分类号： F23Q7/001 ,  H05B3/48 ,  H05B2203/027

摘要： A ceramic glow plug (A) is constituted by a metallic sheath (1); a cylindrical main metallic shell (2) having a holding part (21) which holds a rear part (11); an ceramic heating element (3) fitted into the metallic sheath (1) and obtained by connecting one-side ends (331, 341) of lead-out wires (33, 34) respectively to the ends (321, 322) of a heating resistor (32) to obtain a heater main body, embedding the heater main body in a ceramic powder, and hot-pressing and sintering the powder; a terminal electrode (4) inserted into the cylindrical main metallic shell (2) on its rear end side and insulated therefrom; and lead coils (51, 52) connected to the lead-out wires (33, 34) in such a manner that one-side ends of the coils (51, 52) are brazed respectively to those areas of the lead-out wires (33, 34) which are exposed on the bake surface with a high-purity silver-based brazing material and the other ends thereof are electrically connected respectively to the cylindrical main metallic shell (2) and the terminal electrode (4).

摘要翻译： 陶瓷电热塞（A）由金属护套（1）构成; 具有保持部（11）的保持部（21）的圆筒状的主金属壳（2）。 通过将引出线（33,34）的一侧端部（331,341）分别连接到加热的端部（321,322）而获得的陶瓷加热元件（3），该陶瓷加热元件（3）安装在金属护套（1）中， 电阻器（32）以获得加热器主体，将加热器主体嵌入陶瓷粉末中，并对粉末进行热压和烧结; 端子电极（4），其在其后端侧插入到所述圆筒形主金属壳体（2）中并与其绝缘; 和引出线圈（51,52），其以使得线圈（51,52）的一侧端部分别钎焊到引出线的那些区域的方式连接到引出线（33,34） 33,34），其以高纯度的银系钎焊材料在烘烤面上露出，其另一端分别与圆筒状的主金属壳（2）和端子电极（4）电连接。