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    Nonvolatile semiconductor memory device performing data writing in a toggle manner
    91.
    发明授权
    Nonvolatile semiconductor memory device performing data writing in a toggle manner 失效
    非易失性半导体存储器件以切换方式执行数据写入

    公开(公告)号：US07652912B2

    公开(公告)日：2010-01-26

    申请号：US11520563

    申请日：2006-09-14

    申请人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

    发明人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15

    摘要： A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.

    摘要翻译： 非易失性半导体存储器件包括具有彼此相对磁化的第一和第二磁性层的自由层，并且还具有形成在第一和第二磁性层之间的第一非磁性层，具有固定的磁化方向的第一固定层，第二非磁性层 形成在第二磁性层和第一固定层之间的第一驱动电路，在数据写入操作中使写入电流通过第一写入电流线的第一驱动电路，从而产生作用于自由层的磁化的数据写入磁场;以及 第二驱动电路在数据写入操作中在第一磁性层和第一固定层之间通过自旋注入电流，从而在与第一固定层的磁化方向相反的方向上施加力或者在与第一固定层的磁化方向相反的方向上施加力 自由层的磁化。

    THIN FILM MAGNETIC MEMORY DEVICE CAPABLE OF CONDUCTING STABLE DATA READ AND WRITE OPERATIONS
    92.
    发明申请
    THIN FILM MAGNETIC MEMORY DEVICE CAPABLE OF CONDUCTING STABLE DATA READ AND WRITE OPERATIONS 失效
    能够进行稳定数据读取和写入操作的薄膜磁性存储器件

    公开(公告)号：US20090262575A1

    公开(公告)日：2009-10-22

    申请号：US12494725

    申请日：2009-06-30

    申请人： Hideto Hidaka

    发明人： Hideto Hidaka

    IPC分类号： G11C11/14 ,  G11C7/02

    CPC分类号： H01L27/228 ,  G11C7/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/224

    摘要： A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

    摘要翻译： 形成磁存储单元的隧道磁阻元件包括具有固定方向的固定磁场的固定磁性层，由施加的磁场磁化的自由磁性层和作为绝缘膜的隧道势垒，所述绝缘膜设置在固定和 隧道结区域中的自由磁性层。 在自由磁性层中，使用对应于具有作为存储单元的特性的容易轴区域的区域作为隧道结区域。 具有作为存储单元的不期望​​的特性的硬轴区域不被用作隧道磁阻元件的一部分。

    Thin film magnetic memory device capable of conducting stable data read and write operations
    94.
    发明申请
    Thin film magnetic memory device capable of conducting stable data read and write operations 有权
    能够进行稳定数据读写操作的薄膜磁存储器件

    公开(公告)号：US20080225582A1

    公开(公告)日：2008-09-18

    申请号：US12081153

    申请日：2008-04-11

    申请人： Hideto Hidaka

    发明人： Hideto Hidaka

    IPC分类号： G11C11/14

    CPC分类号： H01L27/228 ,  G11C7/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/224

    摘要： A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

    摘要翻译： 形成磁存储单元的隧道磁阻元件包括具有固定方向的固定磁场的固定磁性层，由施加的磁场磁化的自由磁性层和作为绝缘膜的隧道势垒，所述绝缘膜设置在固定和 隧道结区域中的自由磁性层。 在自由磁性层中，使用对应于具有作为存储单元的特性的容易轴区域的区域作为隧道结区域。 具有作为存储单元的不期望​​的特性的硬轴区域不被用作隧道磁阻元件的一部分。

    Magnetic thin-film memory device for quick and stable reading data
    95.
    发明授权
    Magnetic thin-film memory device for quick and stable reading data 有权
    磁性薄膜记忆装置，用于快速，稳定地读取数据

    公开(公告)号：US07254057B2

    公开(公告)日：2007-08-07

    申请号：US10891109

    申请日：2004-07-15

    申请人： Hideto Hidaka

    发明人： Hideto Hidaka

    IPC分类号： G11C11/14

    CPC分类号： H01L27/228 ,  G11C8/08 ,  G11C11/15 ,  G11C11/16

    摘要： An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation delays of the read word lines and accelerate the data read operation. Activation of each read word line is controlled by a write word line in accordance with a row selection result in a hierarchical manner. A word-line-current control circuit forms and cuts off the current path of a write word line correspondingly to data write and data read.

    摘要翻译： MTJ存储单元独立地具有用于数据写入和数据读取的写字线和读字线。 通过在列方向上划分存储器阵列形成的每两个区域分开布置读取字线，可以减少读取字线的信号传播延迟并加速数据读取操作。 每个读取字线的激活根据分层方式的行选择结果由写入字线控制。 字线电流控制电路对应于数据写入和数据读取形成并切断写入字线的当前路径。

    Data output circuit with reduced output noise
    96.
    发明申请
    Data output circuit with reduced output noise 审中-公开
    数据输出电路具有降低的输出噪声

    公开(公告)号：US20070132488A1

    公开(公告)日：2007-06-14

    申请号：US11704916

    申请日：2007-02-12

    申请人： Hideto Hidaka ,  Masakazu Hirose

    发明人： Hideto Hidaka ,  Masakazu Hirose

    IPC分类号： H03B1/00

    CPC分类号： H03K19/00361

    摘要： A data output drive transistor is rendered conductive when the potential of an internal node attains an H level, whereby an output node is discharged to the level of ground potential. When the drive transistor is turned on, the output node is discharged to the level of ground potential at high speed. This drive transistor is turned on for a predetermined time period when output of a high level data is completed, whereby the output node is discharged to the level of the ground potential for a predetermined time period. As a result, the potential of the output node is lowered from a high level to an intermediate level, so that the amplitude of a subsequent output signal is reduced. An output circuit that can effectively prevent generation of ringing with no increase in the access time is provided. A countermeasure is provided to suppress a ringing at output node which drives the output node at high speed when the output node potential attains a potential at which no ringing is caused. A stable output signal is provided at high speed.

    摘要翻译： 当内部节点的电位达到H电平时，数据输出驱动晶体管导通，从而将输出节点放电到地电位。 当驱动晶体管导通时，输出节点以高速放电到地电位。 当高电平数据的输出完成时，该驱动晶体管导通预定时间段，由此输出节点在预定时间段内被放电到地电位的电平。 结果，输出节点的电位从高电平降低到中间电平，使得后续输出信号的幅度减小。 提供了可以有效地防止产生振铃而不增加访问时间的输出电路。 提供了一种对策，用于当输出节点电位达到不产生振铃的电位时，抑制在输出节点处高速驱动输出节点的振铃。 高速提供稳定的输出信号。

    Thin film magnetic memory device capable of conducting stable data read and write operations
    99.
    发明申请
    Thin film magnetic memory device capable of conducting stable data read and write operations 失效
    能够进行稳定数据读写操作的薄膜磁存储器件

    公开(公告)号：US20070007536A1

    公开(公告)日：2007-01-11

    申请号：US11505476

    申请日：2006-08-17

    申请人： Hideto Hidaka

    发明人： Hideto Hidaka

    IPC分类号： H01L29/04

    CPC分类号： H01L27/228 ,  G11C7/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/224

    摘要： A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

    摘要翻译： 形成磁存储单元的隧道磁阻元件包括具有固定方向的固定磁场的固定磁性层，由施加的磁场磁化的自由磁性层和作为绝缘膜的隧道势垒，所述绝缘膜设置在固定和 隧道结区域中的自由磁性层。 在自由磁性层中，使用对应于具有作为存储单元的特性的容易轴区域的区域作为隧道结区域。 具有作为存储单元的不期望​​的特性的硬轴区域不被用作隧道磁阻元件的一部分。