Abstract:
A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.
Abstract:
A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.
Abstract:
A method for fabricating a pixel structure of a liquid crystal device is provided. The method comprises providing a substrate defining a thin film transistor (TFT) region and a display region thereon. An opaque conductive layer is formed on the TFT region, and a transparent pixel electrode is formed on the display region. A patterned photoresist passivation layer is formed by backside exposure process on the TFT region, wherein the opaque conductive layer serves as the photo-mask during the backside exposure process. The photoresist passivation layer is subjected to a middle bake process to be reflowed, resulting in a complete covering of the opaque conductive layer.
Abstract:
An electrophoretic display apparatus and an image-updating method thereof are provided. The electrophoretic display apparatus comprises a display panel and a source driver. The display panel comprises a plurality of pixels and a plurality of source lines, and each pixel electrode is electrically coupled to an AC common voltage through a corresponding capacitor. The capacitor comprises a plurality of charged particles. The source driver comprises a first data-latching circuit and a second data-latching circuit. Each of the data-latching circuits comprises a transistor, a capacitor and an inverter. The first data-latching circuit receives image data and a data shift-register output pulse. The second data-latching circuit is electrically coupled between an output terminal of the first data-latching circuit and a source line and is used for receiving a data output pulse.
Abstract:
A method of driving an electrophoretic display is set forth for avoiding image-edge residual while sequentially displaying a first frame and a second frame. During the time of displaying the first frame, set a common voltage to be a first voltage, apply a second voltage different from the first voltage to a first pixel for writing a first data signal into the first pixel, and apply the first voltage to a second pixel adjacent to the first pixel for retaining a second data signal of the second pixel, which is different from the first data signal. During the time of displaying the second frame, set the common voltage to be the second voltage, apply the first voltage to the first pixel for writing the second data signal into the first pixel, and apply the first voltage to the second pixel for retaining the second data signal of the second pixel.
Abstract:
A method for producing a light reflecting structure in a transflective or reflective liquid crystal display uses one or two masks for masking a photoresist layer in a back-side exposing process. The pattern on the masks is designed to produce rod-like structures or crevices and holes on exposed and developed photoresist layer. After the exposed photoresist is developed, a heat treatment process or a UV curing process is used to soften the photoresist layer so that the reshaped surface is more or less contiguous but uneven. A reflective coating is then deposited on the uneven surface. One or more intermediate layers can be made between the masks, between the lower mask and the substrate, and between the upper masks and the photoresist layers. The masks and the intermediate layers can be made in conjunction with the fabrication of the liquid crystal display panel.
Abstract:
An electrophoretic display apparatus and an image-updating method thereof are provided. The electrophoretic display apparatus comprises a display panel and a source driver. The display panel comprises a plurality of pixels and a plurality of source lines, and each pixel electrode is electrically coupled to an AC common voltage through a corresponding capacitor. The capacitor comprises a plurality of charged particles. The source driver comprises a first data-latching circuit and a second data-latching circuit. Each of the data-latching circuits comprises a transistor, a capacitor and an inverter. The first data-latching circuit receives image data and a data shift-register output pulse. The second data-latching circuit is electrically coupled between an output terminal of the first data-latching circuit and a source line and is used for receiving a data output pulse.
Abstract:
A method of driving an electrophoretic display is set forth for avoiding image-edge residual while sequentially displaying a first frame and a second frame. During the time of displaying the first frame, set a common voltage to be a first voltage, apply a second voltage different from the first voltage to a first pixel for writing a first data signal into the first pixel, and apply the first voltage to a second pixel adjacent to the first pixel for retaining a second data signal of the second pixel, which is different from the first data signal. During the time of displaying the second frame, set the common voltage to be the second voltage, apply the first voltage to the first pixel for writing the second data signal into the first pixel, and apply the first voltage to the second pixel for retaining the second data signal of the second pixel.
Abstract:
A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.
Abstract:
An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.