公开(公告)号：US20070239383A1

公开(公告)日：2007-10-11

申请号：US11394860

申请日：2006-03-31

申请人： Merritt Funk ,  Daniel Prager

发明人： Merritt Funk ,  Daniel Prager

IPC分类号： G06F19/00

CPC分类号： G01N21/4788

摘要： A method of refining a virtual profile library includes obtaining a reference signal measured off a reference structure on a semiconductor wafer with a metrology device. A best match is selected of the reference signal in a virtual profile data space. The virtual profile data space has data points with specified accuracy values. The data points represent virtual profile parameters and associated virtual profile signals. The virtual profile parameters characterize the profile of an integrated circuit structure. The best match being a data point of the profile data space with a signal closest to the reference signal. Refined virtual profile parameters are determined corresponding to the reference signal based on the virtual profile parameters of the selected virtual profile signal using a refinement procedure.

摘要翻译： 精细虚拟简档库的方法包括：使用测量装置获得在半导体晶片上的参考结构测量的参考信号。 在虚拟简档数据空间中选择参考信号的最佳匹配。 虚拟配置文件数据空间具有指定精度值的数据点。 数据点表示虚拟轮廓参数和相关联的虚拟轮廓信号。 虚拟轮廓参数表征集成电路结构的轮廓。 最佳匹配是具有最接近参考信号的信号的简档数据空间的数据点。 使用细化过程，基于所选虚拟简档信号的虚拟简档参数，对应于参考信号来确定精细虚拟简档参数。

公开(公告)号：US20070229806A1

公开(公告)日：2007-10-04

申请号：US11396210

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  H01L22/12

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

摘要翻译： 使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。 从损坏的结构接收衍射光束。 处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

公开(公告)号：US07158851B2

公开(公告)日：2007-01-02

申请号：US10609129

申请日：2003-06-30

申请人： Merritt Funk

发明人： Merritt Funk

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/31265 ,  G05B2219/32195 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/26

摘要： A method of using a run-to-run (R2R) controller to provide wafer-to-wafer (W2W) control in a semiconductor processing system is provided. The R2R controller includes a feed-forward (FF) controller, a process model controller, a feedback (FB) controller, and a process controller. The R2R controller uses feed-forward data, modeling data, feedback data, and process data to update a process recipe on a wafer-to-wafer time frame.

摘要翻译： 提供了一种使用运行（R2R）控制器在半导体处理系统中提供晶圆到晶片（W2W）控制的方法。 R2R控制器包括前馈（FF）控制器，过程模型控制器，反馈（FB）控制器和过程控制器。 R2R控制器使用前馈数据，建模数据，反馈数据和过程数据来更新晶圆到晶片时间框架上的工艺配方。

公开(公告)号：US20060184264A1

公开(公告)日：2006-08-17

申请号：US11058321

申请日：2005-02-16

申请人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

发明人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

公开(公告)号：US20060042543A1

公开(公告)日：2006-03-02

申请号：US10927514

申请日：2004-08-27

申请人： Merritt Funk ,  Wesley Natzle

发明人： Merritt Funk ,  Wesley Natzle

IPC分类号： B05C11/00

CPC分类号： H01L22/20 ,  G05B2219/45031

摘要： The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

摘要翻译： 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

公开(公告)号：US08183062B2

公开(公告)日：2012-05-22

申请号：US12391410

申请日：2009-02-24

申请人： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager

发明人： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager

IPC分类号： H01L21/66

CPC分类号： G03B27/42 ,  G03F7/70466

摘要： The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.

摘要翻译： 本发明可以提供使用光刻蚀刻光刻蚀刻（LELE）处理序列实时地在晶片上形成金属栅极结构的设备和方法。 与LELE处理序列相关联的实时数据和/或历史数据可以作为内部集成计量模块（i-IMM）中的固定变量或约束变量进​​行向前馈送和/或反馈，以提高金属门结构的精度 。

公开(公告)号：US08019458B2

公开(公告)日：2011-09-13

申请号：US12186668

申请日：2008-08-06

申请人： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

发明人： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

IPC分类号： G06F19/00 ,  H01L21/00 ,  H01L21/36 ,  H01L21/44 ,  H01L21/31 ,  G01R31/26 ,  C30B23/00 ,  C23F1/00 ,  H01L39/00

CPC分类号： G05B17/02 ,  Y10S438/924

摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.

摘要翻译： 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

公开(公告)号：US07576851B2

公开(公告)日：2009-08-18

申请号：US11395636

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01P3/36

CPC分类号： G01N21/95607

摘要： A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

摘要翻译： 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

公开(公告)号：US07451054B2

公开(公告)日：2008-11-11

申请号：US11668654

申请日：2007-01-30

申请人： Sachin Deshpande ,  Merritt Funk

发明人： Sachin Deshpande ,  Merritt Funk

IPC分类号： G06F19/00

CPC分类号： G03F7/70875 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70691

摘要： A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying.

摘要翻译： 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。

公开(公告)号：US07451011B2

公开(公告)日：2008-11-11

申请号：US10927514

申请日：2004-08-27

申请人： Merritt Funk ,  Wesley Natzle

发明人： Merritt Funk ,  Wesley Natzle

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  G05B2219/45031

摘要： The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

摘要翻译： 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。