公开(公告)号：US07920362B2

公开(公告)日：2011-04-05

申请号：US11943171

申请日：2007-11-20

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： G11B5/59683

摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。 自由层的功能使得其磁化方向根据外部磁场而变化。 间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。 在它们之间插入半导体氧化物层。 形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

公开(公告)号：US07885042B2

公开(公告)日：2011-02-08

申请号：US11870097

申请日：2007-10-10

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/305 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。

公开(公告)号：US20110020037A1

公开(公告)日：2011-01-27

申请号：US12901144

申请日：2010-10-08

申请人： Takashi SAKAMOTO ,  Kei Hirata ,  Akihide Kawamura ,  Naoya Iwata

发明人： Takashi SAKAMOTO ,  Kei Hirata ,  Akihide Kawamura ,  Naoya Iwata

IPC分类号： G03G15/08

CPC分类号： G03G15/0822 ,  G03G2215/0822 ,  G03G2215/083 ,  G03G2215/0833

摘要： A developing device includes a first developer containing chamber, a second developer containing chamber, a first inflow section, a second inflow section, a first conveyance member and a second conveyance member. The first inflow section allows the developer to flow from the second developer containing chamber into the first developer containing chamber. The second inflow section allows the developer to flow from the first developer containing chamber into the second developer containing chamber. The first conveyance member conveys the developer contained in the first developer containing chamber in a first developer conveyance direction. The second conveyance member conveys the developer contained in the second developer containing chamber in a second developer conveyance direction. In a range corresponding to the first inflow section, an area of a cross section, perpendicular to the second developer conveyance direction, of the second developer containing chamber decreases along the second developer conveyance direction.

摘要翻译： 显影装置包括第一显影剂容纳室，第二显影剂容纳室，第一流入部分，第二流入部分，第一输送部件和第二输送部件。 第一流入部分允许显影剂从第二显影剂容纳室流入第一显影剂容纳室。 第二流入部分允许显影剂从第一显影剂容纳室流入第二显影剂容纳室。 第一输送构件在第一显影剂输送方向上输送容纳在第一显影剂容纳室中的显影剂。 第二输送构件在第二显影剂输送方向上输送容纳在第二显影剂容纳室中的显影剂。 在与第一流入部对应的范围内，第二显影剂收容室的与第二显影剂输送方向垂直的截面的区域沿第二显影剂输送方向减小。

公开(公告)号：US20100302680A1

公开(公告)日：2010-12-02

申请号：US12457089

申请日：2009-06-01

申请人： Kei Hirata ,  Takeo Kagami ,  Tatsuhiro Nojima ,  Hisayoshi Watanabe ,  Michitaka Nishiyama

发明人： Kei Hirata ,  Takeo Kagami ,  Tatsuhiro Nojima ,  Hisayoshi Watanabe ,  Michitaka Nishiyama

IPC分类号： G11B5/23

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/315

摘要： A perpendicular magnetic write head includes: a magnetic pole having an end face on an air bearing surface; and side shield layers each having an end face on the air bearing surface, and arranged on both sides, in a write track width direction, of the magnetic pole with a side gap in between. The end face of the magnetic pole has a geometry in which a width at a trailing edge is larger than a width at a leading edge. Relationship D1

摘要翻译： 垂直磁写头包括：磁极，其在空气轴承表面上具有端面; 以及侧面屏蔽层，其各自具有位于空气轴承表面上的端面，并且布置在磁极的写入磁道宽度方向的两侧，其间具有侧面间隙。 磁极的端面具有几何形状，其中后缘处的宽度大于前缘处的宽度。 在空气轴承表面中满足关系D1

公开(公告)号：US07843667B2

公开(公告)日：2010-11-30

申请号：US11802219

申请日：2007-05-21

申请人： Kei Hirata ,  Norikazu Ota ,  Yuichi Watabe ,  Tetsuro Sasaki ,  Takeo Kagami ,  Tetsuya Roppongi ,  Kazuki Sato ,  Yuji Otsubo ,  Sohei Horiuchi ,  Yoshiaki Tanaka ,  Kenji Yokoyama ,  Noriaki Kasahara

发明人： Kei Hirata ,  Norikazu Ota ,  Yuichi Watabe ,  Tetsuro Sasaki ,  Takeo Kagami ,  Tetsuya Roppongi ,  Kazuki Sato ,  Yuji Otsubo ,  Sohei Horiuchi ,  Yoshiaki Tanaka ,  Kenji Yokoyama ,  Noriaki Kasahara

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/11 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/6064

摘要： Provided is a thin film magnetic head capable of suppressing an occurrence of a track erase, decreasing an influence on a magnetoresistive element caused by a magnetic flux generated from a thin film coil, and further decreasing the parasitic capacity. The thin film magnetic head has, in order in a stacked direction, a first magnetic shield layer, a magnetoresistive element, a second magnetic shield layer, a third magnetic shield layer, a main magnetic pole layer and a return yoke layer. A width in a track width direction of at least one of the first and the second magnetic shield layers is smaller than widths in a track width direction of the third magnetic shield layer and the return yoke layer.

摘要翻译： 提供一种薄膜磁头，其能够抑制磁道擦除的发生，减少由由薄膜线圈产生的磁通引起的对磁阻元件的影响，并进一步降低寄生电容。 薄膜磁头沿堆叠方向依次具有第一磁屏蔽层，磁阻元件，第二磁屏蔽层，第三磁屏蔽层，主磁极层和返回磁轭层。 第一和第二磁屏蔽层中的至少一个的轨道宽度方向上的宽度小于第三磁屏蔽层和返回磁轭层的磁道宽度方向上的宽度。

公开(公告)号：US07835656B2

公开(公告)日：2010-11-16

申请号：US12058880

申请日：2008-03-31

申请人： Naoya Iwata ,  Takashi Sakamoto ,  Akihide Kawamura ,  Kei Hirata

发明人： Naoya Iwata ,  Takashi Sakamoto ,  Akihide Kawamura ,  Kei Hirata

IPC分类号： G03G15/08

CPC分类号： G03G15/0853 ,  G03G15/0893 ,  G03G2215/0822

摘要： A developing device includes: a developer carrier; a first housing chamber; a second housing chamber; a first inflow portion; a first conveying member; a second conveying member; and a concentration detecting member.

摘要翻译： 显影装置包括：显影剂载体; 第一房屋; 第二容纳室; 第一流入部分; 第一输送构件; 第二输送构件; 和浓度检测部件。

公开(公告)号：US20100232840A1

公开(公告)日：2010-09-16

申请号：US12557109

申请日：2009-09-10

申请人： Hiroaki Kitagawa ,  Kei Hirata ,  Kouji Fukumuro

发明人： Hiroaki Kitagawa ,  Kei Hirata ,  Kouji Fukumuro

IPC分类号： G03G15/08 ,  B65D43/00

CPC分类号： G03G15/0886 ,  G03G15/0855 ,  G03G15/0865 ,  G03G15/0875 ,  G03G2215/0692

摘要： A storage container includes a container body that stores a supplementary material and is detachably attached to an image forming apparatus; a discharge port that is provided at a bottom of the container body; two protrusions that protrude from the container body toward both sides; and an opening-closing member that is movably supported by a guide frame surrounding the discharge port, wherein a rearward movement of the opening-closing member is restricted by stoppers while the container body is mounted on the mounting unit, the protrusions come in contact with the stoppers and push the stoppers laterally to release the restriction of the opening-closing member while the container body is pulled out of the image forming apparatus, and a width, in an attaching/detaching direction of the container body, of one protrusion of the protrusions is smaller than that of the other protrusion.

摘要翻译： 储存容器包括容纳主体，其容纳辅助材料并且可拆卸地附接到图像形成装置; 排出口，设置在容器主体的底部; 从容器主体朝向两侧突出的两个突起; 以及开闭部件，其由围绕所述排出口的引导框架可移动地支撑，其中，当所述容器主体安装在所述安装单元上时，所述打开 - 关闭部件的向后运动由塞子限制，所述突起与 所述止动件并且侧向地推动所述止动件以释放所述开闭构件的限制，同时所述容器主体从所述图像形成装置中拉出，并且在所述容器主体的安装/拆卸方向上具有所述容器主体的一个突起的宽度 突起小于另一突起的突起。

公开(公告)号：US07760475B2

公开(公告)日：2010-07-20

申请号：US11685043

申请日：2007-03-12

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： H01F10/1936 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  Y10T428/1107

摘要： A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.

摘要翻译： 磁阻效应元件包括具有固定磁化方向的固定层，具有取决于外部磁场的磁化方向可变的自由层和设置在被钉扎层和自由层之间的非磁性间隔层。 自由层包括Heusler合金层和由第4族元素，第5族元素或第6族元素构成的磁致伸缩层。

公开(公告)号：US07693477B2

公开(公告)日：2010-04-06

申请号：US11785169

申请日：2007-04-16

申请人： Kiyoshi Chatani ,  Kei Hirata ,  Takashi Sakamoto ,  Hideaki Miyata

发明人： Kiyoshi Chatani ,  Kei Hirata ,  Takashi Sakamoto ,  Hideaki Miyata

IPC分类号： G03G21/00

CPC分类号： G03G15/0893 ,  G03G15/0868 ,  G03G2215/0827

摘要： An image forming member includes: an electrostatic latent image holding member that holds an electrostatic latent image; a developing unit that develops a toner image formed by a toner on a surface of the electrostatic latent image holding member; a toner removing member that removes a residual toner remaining on a surface of the electrostatic latent image holding member; a conveying path including a conveying member that is internally provided in the conveying path and that returns the residual toner removed from the surface of the electrostatic latent image holding member to the developing unit; and a trapping portion that traps a foreign matter conveyed by the conveying member, the electrostatic latent image holding member, the developing unit, the toner removing member, the conveying path, and the trapping portion of the image forming member being integrally and detachably attached to an image forming apparatus body.

摘要翻译： 图像形成构件包括：静电潜像保持构件，其保持静电潜像; 显影单元，其显影由静电潜像保持部件的表面上的调色剂形成的调色剂图像; 去除残留在静电潜像保持部件的表面上的残留调色剂的调色剂除去部件; 输送路径，包括内部设置在所述输送路径中并将从所述静电潜像保持构件的表面移除的残留调色剂返回到所述显影单元的输送构件; 以及捕获部，其捕获由所述输送构件，所述静电潜像保持构件，所述显影单元，所述调色剂移除构件，所述输送路径和所述图像形成构件的所述捕获部分输送的异物一体地可拆卸地附接到 图像形成装置主体。

公开(公告)号：US07558027B2

公开(公告)日：2009-07-07

申请号：US11411107

申请日：2006-04-26

申请人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

摘要翻译： 磁场传感器包括：磁场检测元件，其基于磁场检测元件的电阻来检测外部磁场的大小以感测电流，电阻根据外部磁场而变化; 形成为覆盖所述磁场检测元件的上屏蔽层; 以及相对于堆叠方向形成在上屏蔽层上方的保护层。 上屏蔽层包括其至少一部分覆盖磁场检测元件的顶表面的第一部分和覆盖第一部分的第二部分，并且第一部分具有比第二部分更大的磁致伸缩绝对值 。